K4A50D Search Results

K4A50D Price and Stock

Filter by Manufacturer

Toshiba America Electronic Components


Toshiba America Electronic Components TK4A50D(STA4,Q,M) MOSFET N-CH 500V 4A TO220SIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TK4A50D(STA4,Q,M)	Tube	55		1	1 $1.20 10 $1.20 100 $0.53 1000 $0.37 10000 $0.29	Buy Now
Avnet Americas	TK4A50D(STA4,Q,M)	Tube		16 Weeks	50	1 - 10 - 100 $0.52 1000 $0.33 10000 $0.33	Buy Now
Mouser Electronics	TK4A50D(STA4,Q,M)		405			1 $1.23 10 $0.59 100 $0.55 1000 $0.34 10000 $0.29	Buy Now
EBV Elektronik	TK4A50D(STA4,Q,M)			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

K4A50D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K*A50D Abstract: TK4A50D Contextual Info: K4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7Ω(typ.) High forward transfer admittance: \|Yfs\| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK4A50D K*A50D TK4A50D	PDF
Contextual Info: K4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K4A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7 (typ.) High forward transfer admittance: \|Yfs\| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK4A50D	PDF
Contextual Info: K4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7Ω(typ.) High forward transfer admittance: \|Yfs\| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK4A50D	PDF
K*A50D Abstract: TK4A50D K4A5 Contextual Info: K4A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K4A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.7Ω(typ.) High forward transfer admittance: \|Yfs\| = 1.5 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V)	Original	TK4A50D K*A50D TK4A50D K4A5	PDF
K4A50D Abstract: TK4A50D Contextual Info: K4A50D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K4A50D ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 1.5 S (標準)	Original	TK4A50D SC-67 2-10U1B K4A50D TK4A50D	PDF
TK4A50D Abstract: K4A50D Contextual Info: K4A50D 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅦ K4A50D ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.7 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 1.5 S (標準)	Original	TK4A50D SC-67 2-10U1B ch-001 TK4A50D K4A50D	PDF