k3869
Abstract: 2SK3869 K386
Contextual Info: K3869 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3869 ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.55 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 5.5 S (標準)
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K3863
Abstract: 2SK3863 2SK386 K386
Contextual Info: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Unit: mm Switching Regulator Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.)
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Toshiba K3869
Abstract: K3869 Transistor K3869 2SK3869
Contextual Info: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)
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k3868
Abstract: 2SK3868 transistor Toshiba K3868 K386
Contextual Info: K3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)
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k3868
Abstract: 2SK3868 transistor Toshiba K3868
Contextual Info: K3868 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type p -MOSVI K3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (V DS = 500 V)
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k3869
Abstract: Toshiba K3869 K3869 Transistor toshiba tc55 2SK3869
Contextual Info: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)
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K3869 Transistor
Abstract: Toshiba K3869 2SK3667,2SK3869,K3869,
Contextual Info: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)
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k3863
Abstract: K386 2SK3863
Contextual Info: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups
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K2-12A01
Abstract: k2885 K2-09A10 K2-23A10 contactor coils 415v k2-09a10 U840 diode K2-09A01 K2-12A10 K3-175A11 K3-450A22
Contextual Info: • Up to 700A AC3 ■ Up to 1000A AC1 ■ DIN rail mounting to 30 amps ■ Add-on auxiliary contacts ■ International approvals ■ Designed to EN60947-1 M New od els Contactors and Overloads Options and ordering codes K2 Contactor series – 09 A COIL VOLTAGE
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en60947-150/60hz20-240v80-415v+14k2-09k2-60k2-45k3-150k2-12a01k2885k2-09a10k2-23a10contactor coils 415v k2-09a10u840 diodek2-09a01k2-12a10k3-175a11k3-450a22
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k3868
Abstract: 2SK3868 k386
Contextual Info: K3868 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3868 ○ スイッチングレギュレータ用 単位: mm z 高速フリーホイリングダイオードを内蔵しています。 : trr = 150 ns (標準) : RDS(ON) = 1.3 Ω (標準)
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l9938
Abstract: K9950 h9940 l9923 L9939 l9940 z9936 z9939 l9934 PQFP208 drawing
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS October 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT October 2000 TABLE OF CONTENTS Section I: Introduction Section II:
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h73235h73622h73101t13716+16h74016g79rv364y71v432vf70v9289y723631z70914yl9938k9950h9940l9923l9939l9940z9936z9939l9934pqfp208 drawing
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h9910
Abstract: K9930 L9938 PB44 L9939 h9940 L9924 Z178 K2837 K3296
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS April 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT April 2000 TABLE OF CONTENTS Section I: Introduction Section II:
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t13351hh6754172v841wh67444+1671v124nb1153971v016nh6749562373la20338gh9910k9930l9938pb44l9939h9940l9924z178k2837k3296
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K3869
Abstract: Toshiba K3869 K3869 Transistor 2SK3869 k386
Contextual Info: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)
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Contextual Info: K3864 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII K3864 PDP Sustain Circuit Applications Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 20 mΩ (typ.) High forward transfer admittance: |Yfs| = 75 S (typ.)
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U840 diode
Abstract: contactor coils 415v with 1no 1nc MC10-S-10 MC18-S-10 contactor coils 415v MC 340 transistor K3-450A22 MC 3041 380-415V K3-700A22
Contextual Info: Contactors and Overloads MC ❚ Up to 700A AC3 ❚ Up to 1000A AC1 ❚ DIN rail mounting to 74A, 37kW ❚ Add on auxiliary contacts top or side mounted ❚ International approvals ❚ Designed to EN60947-1 ❚ Compact design for panel space saving, only 45mm wide upto 40A AC3
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en60947-150/60hz20-240v80-415v+15mc50-smc74-sk3-150k3-175a11k3-200a11u840 diodecontactor coils 415v with 1no 1ncmc10-s-10mc18-s-10contactor coils 415vmc 340 transistork3-450a22mc 3041380-415vk3-700a22
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K2-09A10
Abstract: K2-12A10 K2-23A10 k2885 K2-30A10 K2-12A01 K2-23A01 K2-09A01 K2-16A10 contactor coils 415v k2-09a10
Contextual Info: • Up to 700A AC3 ■ Up to 1000A AC1 ■ DIN rail mounting to 30 amps ■ Add-on auxiliary contacts ■ International approvals ■ Designed to EN60947-1 M New od els Contactors and Overloads Options and ordering codes K2 Contactor series – 09 A COIL VOLTAGE
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en60947-150/60hz20-240v80-415v+14k2-09k2-60k2-45k3-150k2-09a10k2-12a10k2-23a10k2885k2-30a10k2-12a01k2-23a01k2-09a01k2-16a10contactor coils 415v k2-09a10
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K3869
Abstract: K3869 Transistor Toshiba K3869 2SK3869
Contextual Info: K3869 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3869 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance: |Yfs| = 5.5 S (typ.)
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k3868
Abstract: 2SK3868 transistor Toshiba K3868
Contextual Info: K3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)
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h9910
Abstract: h9940 L9939 z9939 l9923 hyundai 9734 ram K9930 l9934 733W K2837
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS January 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT January 2000 TABLE OF CONTENTS Section I: Introduction Section II:
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pn100pn12072v3670z70v261z+16723631zy12526h64413y12663g7130s71215yh9910h9940l9939z9939l9923hyundai 9734 ramk9930l9934733wk2837
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L9939
Abstract: h9940 z9939 l9940 k9920 z9936 l9938 P9924 K9932 L9923
Contextual Info: INTEGRATED DEVICE TECHNOLOGY, INC. QUALITY & RELIABILITY MONITORS July 2000 2975 Stender Way, Santa Clara, CA 95054 TEL: 800 345-7015 FAX: (408) 492-8674 QUALITY & RELIABILITY MONITOR REPORT July 2000 TABLE OF CONTENTS Section I: Introduction Section II:
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220v AC voltage stabilizer schematic diagram
Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585
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ad9272p462-ndlng295lfcp2up463-nd+11lng395mftp5u220v ac voltage stabilizer schematic diagramlg color tv circuit diagram tda 93701000w inverter pure sine wave schematic diagramschematic diagram atx power supply 500wtv sharp ic tda 9381 pscircuit diagram wireless spy camera9744 mini mainboard v1.2sony 279-87transistor e 13005-2superpro lx
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K3863
Abstract: K386 2SK3863
Contextual Info: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)
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K3863
Abstract: 2SK3863
Contextual Info: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Unit: mm Switching Regulator Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.)
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