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    Vishay Intertechnologies

    Vishay Intertechnologies CRCW20106K19FKEF

    Thick Film Resistors - SMD 3/4watt 6.19Kohms 1% 100ppm
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    TTI CRCW20106K19FKEF Reel 4,000
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    K3863 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    K3863

    Abstract: 2SK3863 2SK386 K386
    Contextual Info: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Unit: mm Switching Regulator Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.)


    Original     		2SK3863 K3863 2SK3863 2SK386 K386 PDF

    k3863

    Abstract: K386 2SK3863
    Contextual Info: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3863 k3863 K386 2SK3863 PDF

    K3863

    Abstract: K386 2SK3863
    Contextual Info: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3863 K3863 K386 2SK3863 PDF

    K3863

    Abstract: 2SK3863
    Contextual Info: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Unit: mm Switching Regulator Applications 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.)


    Original     		2SK3863 K3863 2SK3863 PDF

    k3863

    Abstract: 2SK3863
    Contextual Info: K3863 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3863 単位: mm ○ スイッチングレギュレータ用 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 : RDS (ON) = 1.35 Ω (標準) 5.5 ± 0.2 z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.8 S (標準)


    Original     		2SK3863 k3863 2SK3863 PDF

    k386

    Abstract: k3863
    Contextual Info: K3863 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3863 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3863 k386 k3863 PDF