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    Toshiba America Electronic Components 2SK3868(Q,M)

    MOSFET N-CH 500V 5A TO220SIS
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    DigiKey 2SK3868(Q,M) Bulk
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    Vyrian 2SK3868(Q,M) 2,912
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    Radiocontrolli RC-TFSK3-868

    868MHZ FSK TRANSMITTER MODULE
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    DigiKey RC-TFSK3-868 Box 2
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    Bourns Inc 5900-181-RC

    Power Inductors - Leaded 180uH 10%
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    TTI 5900-181-RC Bulk 660 10
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    TT Electronics plc LR2010-R033FW

    Current Sense Resistors - SMD 2010 33 mOhms 1% Tol. AEC-Q200
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    TTI LR2010-R033FW Reel 3,000
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    Vishay Intertechnologies B40C1000G-E4/51

    Bridge Rectifiers 1.0 Amp 65 Volt
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    TTI B40C1000G-E4/51 Bulk 3,000
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    K3868 Datasheets Context Search

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    k3868

    Abstract: 2SK3868 transistor Toshiba K3868 K386
    Contextual Info: K3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3868 k3868 2SK3868 transistor Toshiba K3868 K386 PDF

    k3868

    Abstract: 2SK3868 transistor Toshiba K3868
    Contextual Info: K3868 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type p -MOSVI K3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: R DS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (V DS = 500 V)


    Original     		2SK3868 k3868 2SK3868 transistor Toshiba K3868 PDF

    k3868

    Abstract: 2SK3868 k386
    Contextual Info: K3868 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSVI K3868 ○ スイッチングレギュレータ用 単位: mm z 高速フリーホイリングダイオードを内蔵しています。 : trr = 150 ns (標準) : RDS(ON) = 1.3 Ω (標準)


    Original     		2SK3868 SC-67 2-10U1B k3868 2SK3868 k386 PDF

    transistor Toshiba K3868

    Abstract: k3868 2SK3868 k386 transistor MJ 122
    Contextual Info: K3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3868 transistor Toshiba K3868 k3868 2SK3868 k386 transistor MJ 122 PDF

    k3868

    Abstract: 2SK3868 transistor Toshiba K3868
    Contextual Info: K3868 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI K3868 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: |Yfs| = 3 S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)


    Original     		2SK3868 k3868 2SK3868 transistor Toshiba K3868 PDF