K341 Search Results

C2719

Abstract: K1713-01 Hamamatsu PbS TWO COLOR DETECTOR UV Flame detector pbs photoconductive DETECTOR FLAME A3179-03 C1103-04 K1713-02
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

two color photodiode

Abstract: flame detector DETECTOR FLAME InGaas PIN photodiode pin photodiode transistor 1BW TWO COLOR DETECTOR K3413-05 K3413-08 K3413-09
Contextual Info: UV TO IR DETECTOR Two-color detector K3413-05/-08/-09 Wide spectral response range from UV to IR K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 µm to nearly 1.7 µm. The built-in thermoelectric cooler

K3413-05

Abstract: K3413-08 K3413-09 pin photodiode InGaAs sensitivity InGaas PIN photodiode
Contextual Info: UV TO IR DETECTOR Two-color detector K3413-05/-08/-09 Wide spectral response range from UV to IR K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 µm to nearly 1.7 µm. The built-in thermoelectric cooler

Hamamatsu PbS

Abstract: K1713-02 K3413-01 K3413-02 A3179-03 C1103-04 C2719 C3757-02 K1713-01
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

AN 17820 IC

Abstract: an 17828 an 17827 AN 17821 A k3460 AN 17821 17815
Contextual Info: Single Phase Bridges Part Number X34100B1N1-S X34120B1B1 X34120B1B1-S X34120B1N1 X34120B1N1-S X34160B1B1 X34160B1B1-S X34160B1N1 X34160B1N1-S K3420B1EB1 K3420C1EB1 K3440B1EB1 K3440C1EB1 K3460B1EB1 K3460C1EB1 K3480B1EB1 K3480C1EB1 K34100B1EB1 K34100C1EB1 K34120B1EB1

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: 複合素子 K1713/K3413-01, -002 紫外域から赤外域まで検出が可能 透過型Siフォトダイオードと赤外線検出素子が二階建ての構造になっているため同一光路での設計が可能です。 特長 用途 広い感度波長範囲

Hamamatsu PbS

Abstract: United Detector silicon photodiode A3179-03 C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

A3179-03

Abstract: pbse C1103-04 C3757-02 C9329 K1713-01 K1713-02 K3413-01 K3413-02
Contextual Info: UV TO IR DETECTOR 複合素子 K1713/K3413-01, -02 紫外域から赤外域まで検出が可能 透過型Siフォトダイオードと赤外線検出素子がサンドイッチ構造になっているため 同一光路での設計が可能です。 特長

Contextual Info: Two-color detectors K1713/K3413-01, -002 Wide spectral response range from UV through IR The K1713/K3413-01, -002 have a bi-level structure in which an infrared transmitting Si photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

C1103-04

Abstract: flame detector structure K1713 TWO COLOR DETECTOR two color photodiode Hamamatsu PbS DETECTOR FLAME Semiconductor Radiation Detector SI PBS DETECTOR transistor 1BW
Contextual Info: UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.

Si photodiode, united detector

Contextual Info: UV TO IR DETECTOR Two-color detector K3413-05/-08/-09 Wide spectral response range from UV to IR K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 µm to nearly 1.7 µm. The built-in thermoelectric cooler

K3413-05

Abstract: K3413-08 K3413-09
Contextual Info: 複合素子 K3413-05/-08/-09 紫外から赤外域まで広い感度波長範囲をもつセンサ 透過型SiフォトダイオードとInGaAs PINフォトダイオードを同一光軸で上下に配置したセンサです。0.25 mから1.7 μm 付近まで広い感度波長範囲を実現しています。素子を冷却して温度を一定に保つことによって、S/Nが向上し高精度の測

InGaAs photodiode spectral response

Abstract: photodiode InGaAs photodiode flame InGaAs TWO COLOR DETECTOR K3413-05 K3413-08 K3413-09 k341
Contextual Info: Two-color detectors K3413-05/-08/-09 Sensors with a wide spectral response range from UV to IR The K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 m to nearly 1.7 μm. The

Contextual Info: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.

Contextual Info: Infrared Detectors with Built-in Preamplifiers Dewar Types Easy-to-use, high performance de­ vices with the ultimate in responsivity These devices combine a dewar type detector with a matched pream­ plifier into a metal case. Simply by connecting to a DC power supply,

G5832

Contextual Info: Spectral Response 0.7 to 1.7 |iim • Spectral Response • Dark Current vs. Reverse Voltage • Terminal Capacitance vs. Reverse Voltage Typ.Ta=25’C.1=1MHz 0.6 0.8 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (/im ) 2.0 1 0 -' The cut-off wavelengths of the TE-cooled de­

Contextual Info: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower temperature detection limit: Approx. 200 °C By cooling Ge photodiodes, the dark current can be reduced effec­ tively and the S/N ratio improved.

P4488

Abstract: G5832-05 G5832-11 KI80 pbse B1920-01 a7050
Contextual Info: Pyroelectric Detectors Ideally suited for human body sensing and simplified analytical instruments Broad spectral response Operates at room temperature Low cost Thermally-Compensated Types Single Element Including a thermal compensation element in the same package, these

2SK3417

Contextual Info: K3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3417 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 60 ns (typ.) • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)

2SK3417

Abstract: k341
Contextual Info: K3417 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV K3417 Switching Regulator Applications Unit: mm • Reverse-recovery time: trr = 60 ns (typ.) • Built-in high-speed flywheel diode • Low drain-source ON resistance: RDS (ON) = 1.6 Ω (typ.)

K3413-03

Abstract: Infrared photodiode preamplifier
Contextual Info: Two-color Detectors Broad spectral response range from UV through infrared • Broad spectral response range Tw o-color detectors cover a broad spectral response range, and are effectively used in such applications as flam e m onitors, spectro­ photometers and film thickness gauges.