K1 MARKING CODE Search Results
K1 MARKING CODE Result Highlights (3)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TC4511BP |
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CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 | Datasheet | ||
| CD4527BNS |
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CMOS BCD Rate Multiplier 16-SO |
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| LMV228TLX/NOPB |
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RF Power Detector for CDMA and WCDMA in micro SMD 4-DSBGA -40 to 85 |
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K1 MARKING CODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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diode marking H2
Abstract: Marking H2 transistor mark code t1 COLOR marking codes marking code capacitors marking code k1 marking .H2 fuse MARKING CODE f2 marking code e2 marking code L2
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F1206A F0805B F1206B F0612D F0603C F0402E F0603E diode marking H2 Marking H2 transistor mark code t1 COLOR marking codes marking code capacitors marking code k1 marking .H2 fuse MARKING CODE f2 marking code e2 marking code L2 | |
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Contextual Info: BCW71/BCW72 Features: tLow current max.100mA tLow voltage(max.45V) tLow noise Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BCW71 K1 SOT-23 BCW73 K2 SOT-23 Maximum Ratings & Characteristics: Tamb=25o Parameter: Symbol: Value: |
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BCW71/BCW72 100mA) OT-23 BCW71 BCW73 100MHz 200Hz | |
marking code 68W
Abstract: 68W SOT marking code 68W sot 68w diode transistor 68W MARKING 68W DIODE BAT 68w transistor BAT68W BAT68-04W
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8-04W BAT68-05W BAT68-06W Q62702- OT-323 8-05W 8-06W marking code 68W 68W SOT marking code 68W sot 68w diode transistor 68W MARKING 68W DIODE BAT 68w transistor BAT68W BAT68-04W | |
CC3225Contextual Info: SPECIFICATION FOR APPROVAL REF. : PROD. NAME CC3225□□□□L□-□□□ ABC'S DWG NO. Wound chip Inductor REV. PAGE 20131017-J 1 Ⅰ﹒Configuration and dimensions: 100 Marking Inductance code F H C A' F I K1 E K2 B A ※ △K=∣K1-K2∣=0.25 +0 G |
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CC3225â 20131017-J AR-001C CC3225 | |
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Contextual Info: SPECIFICATION FOR APPROVAL REF. : PROD. NAME CM3225□□□□L□-□□□ ABC'S DWG NO. Wound Chip Inductor REV. 20121109-L PAGE 1 Ⅰ﹒Configuration and dimensions: 100 Marking Inductance code F H C A' A G I K1 E K2 F B I ( PCB Pattern ) ※ △K=∣K1-K2∣=0.25 |
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CM3225â 20121109-L AR-001C | |
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Contextual Info: SPECIFICATION FOR APPROVAL REF. : NAME CM3225□□□□L□-□□□ ABC'S DWG NO. PROD. Wound Chip Inductor REV. 20121109-L PAGE 1 Ⅰ﹒Configuration and dimensions: 100 Marking Inductance code F H C A' A G I K1 E K2 F B I ( PCB Pattern ) ※ △K=∣K1-K2∣=0.25 |
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CM3225â 20121109-L AR-001C | |
2N60 transistor
Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
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MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648 | |
MOSFET MARK y2
Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
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MOS200504 H02N60S O-252 200oC 183oC 217oC 260oC 245oC H02N60SI, MOSFET MARK y2 y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749 | |
02n60
Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
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MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 02n60 all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60E | |
MOSFET MARK y2
Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI
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MOS200501 H01N60S 183oC 217oC 260oC 245oC 10sec H01N60SI, MOSFET MARK y2 transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60SI | |
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Contextual Info: BAS70 .-04 .-05 .-06 Schottky-Diodes Surface mount Schottky-Barrier Single-/ Double-Diodes Schottky-Barrier Einzel-/ Doppel-Dioden für die Oberflächenmontage Version 2005-01-20 Power dissipation Verlustleistung 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 |
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BAS70 OT-23 O-236) BAS70-series BAS70-05 BAS70-04 BAS70-06 | |
marking code 68W
Abstract: marking code 68W sot 68W SOT MARKING 68W SOT-23 MARKING 68W 68w diode
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OCR Scan |
8-04W BAT68-05W BAT68-06W 8-04W 8-05W 8-06W Q62702Q62702Q62702Q62702- OT-323 OT-323 marking code 68W marking code 68W sot 68W SOT MARKING 68W SOT-23 MARKING 68W 68w diode | |
marking code 68WContextual Info: SIEMENS BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W CI/A2 A t/M FL _0_ U BAT68-06W C1/C2 HT • n HT U ET Type Marking Ordering Code Pin Configuration BAT 68-04W |
OCR Scan |
8-04W BAT68-05W BAT68-06W Q62702- OT-323 8-05W 8-06W marking code 68W | |
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Contextual Info: BAS40 .-04 .-05 .-06 Schottky-Diodes Surface mount Schottky-Barrier Single-/ Double-Diodes Schottky-Barrier Einzel-/ Doppel-Dioden für die Oberflächenmontage Version 2005-01-20 Power dissipation Verlustleistung 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1 |
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BAS40 OT-23 O-236) BAS40-series BAS40-05 BAS40-04 BAS40-06 | |
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Contextual Info: BAS35 BAS35 Surface mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2005-02-17 1.1 2.9 ±0.1 0.4 2.5 ±0.1 Type Code 1.3 max 3 2 1 1.9 Dimensions - Maße [mm] 1 = K1 2 = K2 3 = A1/A2 Power dissipation Verlustleistung |
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BAS35 OT-23 O-236) | |
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Contextual Info: BAS35 BAS35 Surface mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2005-02-01 0.4 Power dissipation Verlustleistung 1.1 2.9 ±0.1 2 .5 ± 0 .1 Type Code 1 .3 m ax 3 2 1 1.9 Dimensions - Maße [mm] 1 = K1 2 = K2 3 = A1/A2 |
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BAS35 OT-23 O-236) | |
BAS31
Abstract: BAS35 doppeldiode
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BAS31 BAS35 OT-23 O-236) UL94V-0 BAS31 BAS35 doppeldiode | |
BAS31
Abstract: BAS35
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BAS31, BAS35 OT-23 O-236) UL94V-0 BAS31 BAS35 | |
efd-15 transformer
Abstract: A7000 B66414-B1008-D1 B66413 B66413-G-X149 B66413-G-X187 B66413-U100-K187 B66413-U160-L187 B66414B6008T002 B66413U160L187
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B66414B6008T002 B66413 efd-15 transformer A7000 B66414-B1008-D1 B66413 B66413-G-X149 B66413-G-X187 B66413-U100-K187 B66413-U160-L187 B66414B6008T002 B66413U160L187 | |
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Contextual Info: Si5482DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.015 at VGS = 10 V 12 0.0175 at VGS = 4.5 V 12 Qg (Typ.) 16 nC PowerPAK ChipFET Single 1 D AE XXX 4 Lot Traceability and Date Code D D • Load Switch, PA Switch, and Battery Switch |
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Si5482DU Si5482DU-T1-GE3 11-Mar-11 | |
B66319-G-X167
Abstract: B66232A1114T1 B66319 B66319-G-X127 B66319-G-X130 B66232-B1010-D1 B66319GX167
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B66319 B66319-G-X130 B66319-G-X167 B66319-G-X127 B66319-G100-X1* B66319-G180-X1* 175ions B66232-A1114-T1 B66232-J1112-T1 B66232-A2010 B66319-G-X167 B66232A1114T1 B66319 B66319-G-X127 B66319-G-X130 B66232-B1010-D1 B66319GX167 | |
474 K5C capacitor
Abstract: 104 K5C capacitor smd k77 RDE5C2A 224Z 100V X8G 100V 474 K1C capacitor K5C MURATA AEC-Q200 marking wk1
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C49E-21 474 K5C capacitor 104 K5C capacitor smd k77 RDE5C2A 224Z 100V X8G 100V 474 K1C capacitor K5C MURATA AEC-Q200 marking wk1 | |
104k 630 capacitor
Abstract: M.104 K5C smd k77 RDEF11H223Z0 224 K5C capacitor
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C49E-21 DC25V-DC100V) 104k 630 capacitor M.104 K5C smd k77 RDEF11H223Z0 224 K5C capacitor | |
474 K5C capacitor
Abstract: 474 K1C capacitor 104 k7c smd k77 224k x7r 50 capacitor 104k 630 capacitor 105 K5C capacitor rde5c MK1C M.104 K5C
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C49E-21 DC250V DC450V DC630V 474 K5C capacitor 474 K1C capacitor 104 k7c smd k77 224k x7r 50 capacitor 104k 630 capacitor 105 K5C capacitor rde5c MK1C M.104 K5C | |