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K015-050
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EICHHOFF
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TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS |
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PDF
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70.15KB
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1
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K015-050/502
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EICHHOFF
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TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS |
Scan |
PDF
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70.16KB
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1
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K015-150/502
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EICHHOFF
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TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS |
Scan |
PDF
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70.14KB
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1
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K015-250/502
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EICHHOFF
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TWO-POLE RADIO INTERFERENCE SUPPRESSION CAPACITORS |
Scan |
PDF
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70.15KB
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1
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K0159
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Terasic
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Development Boards, Kits, Programmers - Evaluation Boards - Sensors - DE1-SOC-MTL2 MULTITOUCH DISPLAY |
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PDF
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2.48MB
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K015R
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KANT-TWIST®
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KANT-TWIST CLAMP RND HANDLE 1.5" |
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PDF
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868.23KB
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1
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AK0157A
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET AK0157A with 100V drain-source voltage, 57A continuous drain current, and 17mΩ typical RDS(ON) at 10V VGS, featuring advanced trench technology for low gate charge and high switching performance. |
Original |
PDF
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AK0157A2
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 100V VDS, 57A ID, and RDS(ON) of 14.5mΩ typical at VGS=10V, featuring high ESD capability, low gate charge, and 160W power dissipation in TO-220-3L package. |
Original |
PDF
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AK0157T
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AK Semiconductor
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N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 57A continuous drain current, and 16mΩ typical RDS(ON) at 10V VGS, featuring high ESD capability and optimized for power switching applications. |
Original |
PDF
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AK0157D
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AK Semiconductor
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AK0157D N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 57A continuous drain current, and 16mΩ RDS(ON) at 10V VGS, featuring advanced trench technology for low gate charge and high efficiency in power switching applications. |
Original |
PDF
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AK0157
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AK Semiconductor
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AK0157 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 57A continuous drain current, 16mΩ typical RDS(ON) at 10V VGS, and 170W power dissipation in TO-220 package. |
Original |
PDF
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AK0159
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AK Semiconductor
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AK0159 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 59A continuous drain current, 15mΩ typical RDS(ON) at 10V VGS, advanced trench technology, low gate charge, and high ESD capability. |
Original |
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