K 739 MOSFET Search Results

1N4690

Abstract: capacitor c3a capacitor c3b MAX736 MAX737 MAX739 MAX759 MAX737CPD ZENER DIODE J3 MAX736cpd
Contextual Info: M A X 739 E valuation K it Features ♦ Output Voltage: -12V MAX736 -15V (MAX737) -5V (MAX739) Adjustable, OV to -15V (MAX759) The EV kit contains a printed circuit board and all com­ ponents needed to evaluate an application circuit. The PC board is common to the MAX736/MAX737/MAX739/

IRCZ44

Abstract: IRC540 IRC530 IRC640 IRC644 IRC740 IRC840 N6050
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH 3M C Topbi MOSFET b K opnyce C B03M 0M H 0CTbro KOHTpOHfl M 3a^ M Tbl TpaH3MCTopw M O S F E T cepMM IR C n M e ro T flB a flo n o n H M T e n b H H X BbiBOfla, no3Borm ww,mx pea^M 30BHBaTb #yHKU,Mro orpaHMHeHMfl TOKa m K o m p o rm TeM nepaTypw .

SOT227B

Abstract: STE15NA100 STE180NE10 STE24NA100 STE26NA90 STE40NA60
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su jen\ 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b Kopnyce SOT-227B (ISOTOP) $ up M b i Microelectronics C # e p a npM M eH eH M a: n p M B O flH w e C M C T e M b i, 6 jio k m n M T a H M ^ UPS, 6 n o K M riM T a H M A c n p e o 6 p a 3 0 B a H M e M

IXTN79N20

Abstract: IXFN48N50 IXFN120N20 IXFN27N80 IXFN36N60 IXFN73N30 IXTN21N100 IXFN106N20 IXFN130N30 IXFN150N15
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b K o p n y c e SOT-227B (ISOTOP) $ M pM bi IXYS C # e p a npM M eH eH M a: n p e o 6 p a 3 0 B a ie n M D C-DC, n po M biw ne rn-ib ie MMnynbCHbie 6jiokm nMTaHMfl, cucTeM bi

Contextual Info: P U L S E W ID T H M O D U LA T IO N A M P L IF IE R S APÉX M I C R O T E C H N O L O G Y SA07 HTTP://W W W .APEXMICROTECH.COM 800 546-APEX (800) 5 4 6 - 2 739 FEATURES • • • • • • • • 5 0 0 k H z SWITCHING FU LL BRIDGE OUTPUT 5 -4 0 V (8 0 V P-P)

MAX736cpd

Contextual Info: y i/i/ix i/i/i 19-4749; Rev 1; 4/92 •5V, - 12V, -15V, and A djustable Inverting Current-M ode PWM R egulators _ Features ♦ Pre-Set -5V, -12V, -15V or Adjustable Outputs The MAX736/737/739 have fixed outputs of -12V, -15V, and -5V respectively. The MAX759 is adjustable from OV to -15V.

nf 739 mosfet

Contextual Info: 19-4749; Rev 3; 5/93 J V I \/ r A \A A -5V, -12V, -15V, an d A djustable Inverting Current-Mode PWM Regulators The MAX736/MAX737/MAX739 have fixed outputs of -12V, -15V, and -5V respectively. The MAX759 is adjustable from OV to -15V. Output voltages beyond -15V require a transformer.

FH2164

Contextual Info: FH2164 SILICON N-CHANNEL RF POWER MOSFET PACKAGE STYLE 400 BAL FLG B A B C D E DESCRIPTION: The ASI FH2164 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz. F G MAXIMUM RATINGS ID 4.0 A VDS 50 V PDISS H 1 = SOURCE = FLANGE, O 2 = CHAMFERED 45 LEADS = DRAIN

marking BSs mosfet

Contextual Info: SIPMOS N Channel MOSFET BSS 131 • SIPMOS - enhancement mode • Drain-source voltage K>* = 240V • Continuous drain current / 0 = 0.10A • Drain-source on-resistance • Total power dissipation %«on> = 16.00 PD = 0.36W Type Marking Ordering code for versions on 8 mm-tape

irf 739 mosfet

Abstract: mosfet irf 380 EIA-541 Si4410DYPbF ic power so 8 single mosfet
Contextual Info: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced

Contextual Info: 35E D • fl23k3EG QG171bl fl « S I P SIPMOS N Channel MOSFET BSS131 T ' 3 S - ‘XS' SIEMENS/ SPCL-, SEMICONDS • SIPMOS - enhancement mode • Drain-source voltage Vfct = 240V • Continuous drain current l 0 = 0.10A • Oraln-source on-reslstance • Total power dissipation

DN-12

Contextual Info: A J ÎK c w m a n A M P com pany RF MOSFET Power Transistor, 15W, 12V 2 - 1 7 5 MHz DU1215S Features • • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

Contextual Info: ADVANCE INFORMATION First P age of D ata S heet in P reparation - 5 V In v e rtin g C urrent-M ode PW M R egulators _ Features ♦ Converts Positive Voltages to Negative A high -p e rfo rm a n ce , c u rre n t-m o d e PWM c on trol schem e

Contextual Info: M &CÔM m an A M P com pany RF MOSFET Power Transistor, 20W, 28V 2 - 1 7 5 MHz DU2820S Features • • • • • N-Channel Enh ancem en t Mode Device DMOS Structure I.ower C apacitances for Broadband O peration High Saturated O utput Pow er I.ower Noise Figure Than Bipolar Devices

Contextual Info: PD-91816 International IÖR Rectifier sMPs MosFET IRFIB5N65A HEXFET Power MOSFET A pplications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed pow er switching • High V oltage Isolation = 2.5K V R M S V dss 650V

PTF10026

Abstract: U016 10026 IEC-68-2-54
Contextual Info: ERICSSON ^ PTF 10026 6 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10026 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1.0 GHz. It is rated at 6 watts minimum output power. Nitride surface passivation

EIA-541

Abstract: Si4410DYPbF
Contextual Info: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced

Contextual Info: PD - 95168 Si4410DYPbF l l l l l l HEXFET Power MOSFET N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive Lead-Free 1 8 S 2 7 S 3 6 4 5 S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced

Contextual Info: PD -91815A International lö R Rectifier sMPs MosFET IR F B 9 N 6 5 A HEXFET Power MOSFET Applications • Switch Mode Power Supply SMPS • Uninterruptable Power Supply • High speed power switching V dss 650V Rds(on) max 0.93Î2 Id 8.5 A Benefits

Contextual Info: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits Low Gate Charge Qg results in Simple

Contextual Info: PD-94837 SMPS MOSFET IRFIB5N65APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS† l Lead-Free Benefits Low Gate Charge Qg results in Simple

power mosfet so8 FL

Abstract: 2F 1 marking irf 739 mosfet IRF P CHANNEL MOSFET PN channel MOSFET 10A HEXFET SO-8 logic level n channel MOSFET tu marking MS-012AA Si4410DY
Contextual Info: PD - 91853B Si4410DY HEXFET Power MOSFET l l l l l N-Channel Mosfet Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N channel MOSFET is produced using International

Contextual Info: PD - 91853A Si4410DY HEXFET Power MOSFET l l l l l N-Channel Mosfet Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S VDSS = 30V RDS on = 0.0135Ω T o p V ie w Description This N channel MOSFET is produced using International

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75