K 524 LE Search Results

TMS27C512

Abstract: 27c512j TMS27C
Contextual Info: TMS27C512 524 288-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC512 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY SMLS512E-NOVEMBER 1985-REVISED DECEMBER 1992 J AN D N PA C K A G E S t This Data Sheet is Applicable to All TMS27C512S and TMS27PC512s Symbolized with Code “B" as Described

Contextual Info: NEC MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The ¿iPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

4800L

Abstract: IC-3052B uPD424800 UPD42S480
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.

b32534

Contextual Info: B 32 524 MKT -1 I- - O rd e rin g c o d e s a n d p a c k in g u n its , le a d s p a c in g 2 7,5 m m Cr M a x im u m O rd e rin g c o d e 1 d im e n s io n s hy. f i x / m m ) ( Km , . f < 60 Hz) P a c k in g u n its (pcs) Ammo Reel

doc-70

Abstract: c431a
Contextual Info: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524 288 t h e S M 27C43 1 A ^ SM27C^31AZB °P erates on a single 3.3 V power supply and is TTL compatible. Since

MSM538002C

Abstract: SM535
Contextual Info: O K I Semiconductor MSM538002C r 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit Mask ROM ~~ ~ D E S C R IP TIO N The OKI MSM538002C is a high-speed CMOS Mask ROM that can electrically switch between 524 288word x 16-bit and 1,048 576-word x 8-bit configurations. The MSM538002C operates o n X * 5 0 V

Contextual Info: Alle techie mbehallen/ i l l rights resttied k 5 2 3 1 C kO i ' B Dol. Deloil. 2 1 / 0 4 / 0 4 A 09 69 501 724 7 PL3 33421 06/02/06 09 69 501 524 7 0 , 7 6 jum Au 31890 21/04/04 JH Plating Nod. Dot. Nome Port n umber JMDR Nome JH losp. All Dim. in mm Stood.

MSM27C421AZB

Contextual Info: O K I Semiconductor MSM27C421AZB 524,288-Word x 8-Bit One Time PROM D E S C R IP T IO N The MSM27C421AZB is a 4 M b electrically P rogram m ab le R ead-O nly M em ory o rg an ized as 524 288 ^ rM S M 2 7 C 4 2 1 AZBSM27Cf421 AZB ° p8rateS ° n 3 sinSle 5 V Pow er su PPlv an d is TTL com patible. Since

MSM538022C

Contextual Info: O K I Semiconductor MSM538022C 524,288-W ord x 16-B it o r 1,048,576-W ord x 8 -Bit M ask ROM DESCRIPTION The OKI MSM538022C is a high-speed CMOS M ask ROM th at can electrically sw itch betw een 524 288w o rd x 16-bit a n d 1,048 576-w ord x 8-bit configurations. The MSM538022C o perates o n T s in i 5 0 V

MSM538022C

Abstract: MSM538032C
Contextual Info: O K I Semiconductor MSM538032C 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit Low-Voltage Mask ROM DESCRIPTION The OKI M SM 538032C is a high-speed CMOS M ask r d iu i . • „ w ord x 16-bit and l eus V 7C. a o ur KOM th at can electrically sw itch betw een 524 288x Ib Dlt and 1,048,576-w ord x 8-bit configurations The

H A 431

Contextual Info: PTOO CE SPOO CE wall mounting receptacle S PT R T P 1 _ , * ^ * , * \ 120 • 005 Dia ( 147 * 005 Dia size 24) SP 150 • 005 Dia. k •• ^ S i i (T P) 4 H o le s • TERMINATION A S S E M B L IE S C E " Open Wire Seal " C E " (SR ) Strain Relief C P " Potting Boot

Contextual Info: circ-o-gide Snap-In Button-Style Card Guides • • • • 35 Standard configurations Precision Molded for rigidity, strength and heat resistance from 94V-O UL rated materials Improves PCB and system cooling Supports any spacing, any length and any PCB thickness

Contextual Info: Performance Level PL3 : 50 mating Cycles No Gas Test PL2 : 250 mating Cycles 4 day Gas Test S4 . 0,76pm Au or equivalent PdNi Part Number Part Number Part Number Nb of Contacts 06 10 14 16 20 24 26 30 34 40 60 60 64 06 10 14 16 20 24 26 30 34 40 60 60 64 06

DIN 5901

Contextual Info: PL3 : 50 m ating C ycles No G as T est P erform ance Level PL2 : 250 m ating C ycles 4 days G as Test S4 : 0,76pm Au or equivalent PdNi P art Num ber P art Num ber P art Num ber Nb of C ontacts 06 10 14 16 20 24 26 30 34 40 50 60 64 06 10 14 16 20 24 26 30

6914

Contextual Info: Performance Level PL3 : 50 mating Cycles No Gas Test PL2 : 250 mating C ycles 4 day Gas Test 54 0,76pm Au or equivalent PdNi Part Number Part Number Part Number Nb of C ontacts 06 10 14 16 20 24 25 30 34 40 50 60 64 06 10 14 16 20 24 26 30 34 40 50 60 64 06

Contextual Info: PL3 : 50 m ating C ycles No Gas Test Perform ance Level PL2 : 250 m ating C ycles 4 days Gas Test 34 : 0.76pm A u or equivalent PdNi Part Number Part Number Part Number Nb of C ontacts 06 10 14 16 20 24 26 30 34 40 50 60 64 06 10 14 16 20 24 26 30 34 40 50

Contextual Info: P e r f o r m a n c e L ev el PL3 : PL2 : S4 50 m a t i n g C y c l e s 250 m ating C yc le s 0 . 7 6 | j m A u or No G as Test 4 day Gas Test eq uivalen t PdN: D im en sion s m m C ontact N b of C o n ta cts Part N u m b e r Part N u m b e r Part N u m b e r

SCR+TY+6004

Abstract: 6004
Contextual Info: P e rfo rm a n ce Level PL3 : 50 m a tin g C y c le s No G a s T e s t Nt> of C o n ta c ts 06 10 14 16 20 24 26 30 34 40 50 60 64 06 10 14 16 20 24 26 30 34 40 50 60 64 Part N u m b e r 0918 0918 0918 0918 0918 0918 0918 0918 0918 0918 0918 0918 0918 0919

Contextual Info: P e r fo r m a n c e Level PL3 : PL2 : 34 : 50 m a tin g C y c le s 250 m a tin g C y c le s 0 .7 G |jm A u or No G as T e st 4 day Gas Test equivalen t P d N i D im e n s io n s m m C ontact N b of C o n ta cts Part N u m b e r Part N u m b e r Part N u m b e r

Contextual Info: P e rfo r m a n c e Level PL3 : 50 m a tin g C y c le s No G a s T e s t N b o f C o n ta c ts PL2 : 2 5 0 m a t in g C y c le s 4 d a y Gas T est P a rt N u m b e r P a rt N u m b e r S4 : 0 ,7 6 p m A u or e q u iv a le n t P d N i P a rt N u m b e r D im e n s io n s

Contextual Info: P e rfo r m a n c e Level PL3 : 50 m a tin g C y c le s No G a s T e s t N b o f C o n ta c ts PL2 : 2 5 0 m a tin g C y c le s 4 day Gas Test P a rt N u m b e r P a rt N u m b e r S4 : 0 ,7 6 |jm A u or e q u iv a le n t P d N i P a rt N u m b e r 06 10 14

Contextual Info: P e r f o r m a n c e Le v e l PL3 : PL2 : 5 0 m a t in g C y c l e s 2 5 0 m a t in g C y c l e s 0 ,7 6 p m A u or S4 N o G a s T est 4 d a y G a s T est e q u iv a le n t P d N i P a rt N u m b e r P a rt N u m b e r P a rt N u m b e r D im e n s io n s