K 524 LE Search Results

TMS27C512

Abstract: 27c512j TMS27C
Contextual Info: TMS27C512 524 288-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC512 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY SMLS512E-NOVEMBER 1985-REVISED DECEMBER 1992 J AN D N PA C K A G E S t This Data Sheet is Applicable to All TMS27C512S and TMS27PC512s Symbolized with Code “B" as Described

ic 7455

Abstract: t523 an 6185 SM 6185
Contextual Info: ID l.tìS U L9 4 V -0 2„ X - v + t i S K jSSB O. I u mM I N. : # W X '> + T±feX-v+ 1.0 u m M I N . LO umM I N. — : 3. n o v y 'J o m A ^ 4 .i t n a w p : t =l.6±0.05 A '¿ mm m 6. : 52326-* I, 52368-*»* I 52409-* I, 524 10-* I 524 11-* I „

4800L

Abstract: IC-3052B 1PD42S4800L-A70 424800L uPD424800-L
Contextual Info: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ / juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability

Contextual Info: NEC MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The iiPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / /¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The ¿iPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

424800-70

Abstract: nec 424800 JPD42S4800 PD424800LE-70 424800L 424800g5
Contextual Info: NEC MOS INTEGRATED CIRCUIT juPD42S4800, 424800 4M -BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /zPD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

424800-70

Abstract: 42s4800 2716D nec 42s4800 UPD 552 C 424800-80 NEC D 553 C 574 nec uPD424800 nec 2716d
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The J2PD42S4800, 424800 are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

UPD42S4800-70

Contextual Info: NEC b l4S7S2S O Om iD*! m • NECEj A T A SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /IPD42S4800, 424800 are 524 288 words by 8 bits dynam ic CMOS RAMs. The fast page mode capability

4800L

Abstract: IC-3052B uPD424800 UPD42S480
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: HDAS-524,-528 k s â n 12-Bit, 400 KHz Data Acquisition Systems PRODUCT DATA FEATURES • 12-bit resolution, 400 KHz • 8 channels single-ended or 4 channels differen­ tial • Miniature 40-pin DDIP • Full scale gain range from 100 mV to 10V • Three-state outputs

Contextual Info: E2D5032-27-50 O K I Semiconductor MSM6587 524,^8-Word x 1-Bit Serial Register GENERAL DESCRtPTION The MSM6587 is a serial register in 524,288 words x 1 bit configuration featuring medium speed operation with low-power consumption. The MSM6587has a built-in internal address generator circuit allowing continuous serial read / write

Contextual Info: NEC DATA SHEET MOS INTEGRATED CIRCUIT juPD42S4805A, 424805A 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, HYPER PAGE MODE Description The ftPD42S4805A, 424805A are 524 288 words by 8 bits dynamic CMOS RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.

Contextual Info: SAMSUNG ELECTRONICS INC bME D • 7^4142 DD131S7 524 B S H 6 K KM41C4000AL CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM 41C4000AL is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.

EZ31

Abstract: MSM51256 MSC2321A8A-YS18
Contextual Info: 4bE D O K I • b ? 2 4 2 H G □ D Q cì?DS ibb « O K I J O K I S E M I C O N D U C T O R GROUP s e m ic o n d u c to r M S C 2 3 2 1 A - X X Y S 1 8 524, 288 WORD BY 36 BIT DYNAMIC RAM MODULE GENERAL DESCRIPTION The Oki MSC2321A-XXYS18 is a fully decoded, 524,288 words X 32 bit CMOS dynamic random

UPD42S4805A

Abstract: nec d 588
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ / juPD42S4805A, 424805A 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, HYPER PAGE MODE D escription The /JPD42S4805A, 424805A are 524 288 w ords by 8 bits dynam ic CMOS RAMs w ith optional hyper page mode. Hyper page mode is a kind o f page mode and is useful for the read operation.

doc-70

Abstract: c431a
Contextual Info: O K I Semiconductor MSM27C431AZB 524,288-Word x 8-Bit Low-Voltage One Time PROM D E S C R IP T IO N The MSM27C431AZB is a 4 Mb electrically Programmable Read-Only Memory organized as 524 288 t h e S M 27C43 1 A ^ SM27C^31AZB °P erates on a single 3.3 V power supply and is TTL compatible. Since

MSM538002C

Abstract: SM535
Contextual Info: O K I Semiconductor MSM538002C r 524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit Mask ROM ~~ ~ D E S C R IP TIO N The OKI MSM538002C is a high-speed CMOS Mask ROM that can electrically switch between 524 288word x 16-bit and 1,048 576-word x 8-bit configurations. The MSM538002C operates o n X * 5 0 V

Contextual Info: Alle techie mbehallen/ i l l rights resttied k 5 2 3 1 C kO i ' B Dol. Deloil. 2 1 / 0 4 / 0 4 A 09 69 501 724 7 PL3 33421 06/02/06 09 69 501 524 7 0 , 7 6 jum Au 31890 21/04/04 JH Plating Nod. Dot. Nome Port n umber JMDR Nome JH losp. All Dim. in mm Stood.

MSM27C421AZB

Contextual Info: O K I Semiconductor MSM27C421AZB 524,288-Word x 8-Bit One Time PROM D E S C R IP T IO N The MSM27C421AZB is a 4 M b electrically P rogram m ab le R ead-O nly M em ory o rg an ized as 524 288 ^ rM S M 2 7 C 4 2 1 AZBSM27Cf421 AZB ° p8rateS ° n 3 sinSle 5 V Pow er su PPlv an d is TTL com patible. Since

KM48V514B

Contextual Info: CMOS DRAM KM4ÔV514B/BL/BLL 5 1 2 K x 8 Bit CMOS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: T h e S a m s u n g K M 4 8 V 5 1 4 B /B I7 B L L is a C M O S h ig h sp e e d 524 ,28 8 x 8 D ynam ic R an d o m A c c e s s M em ory.

Contextual Info: isr VITELIC f V104AJ36, V104A J236 P R E LIM IN A R Y 25 6K X 36, 5 1 2 K x 36 C M O S M E M O R Y M O D U LE S Features Description • 262,144 x 36 bit or 524, 288 x 36 bit organizations • Utilizes 256K x 4 and 256K x 1 C M O S DRAMs ■ Fast access times 70 ns, 80 ns, 100 ns

Contextual Info: •H Y U N D A I HY62VB4DD Series 5 1 Z K N B - b il C M O S 5R A M PREUMINAHY DESCRIPTION TVib HYSZV8400 is a high-speBd, law power and 524,ZBfl x B-bits CMOS static RAM fabricated using Hyundai's high perform ance twin tub CMOS pro c b s s technology. The HY52VB400 has a data retention m ode that guarantees

d4516161

Abstract: MPD4516421
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description T he /¿PD4516421, 451 6821, 4516161 are high-speed 16,777,216 -bit s y nchrono us dyna m ic random -access m em o ries, org a n ize d a s 2,097,152 x 4 x 2, 1,048,576 x 8 * 2 and 524 ,288 x 16 x 2 w ord x bit * ban k}, respectively.

Contextual Info: tiM27SSS □ □ 4 1 b cl2 2TÛ ATA SHEET NEC MOS INTEGRATED CIRCUIT //PD42S4800L, 424800L 3.3 V OPERATION 4 M BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The ^PD42S4800L, 424800L are 524 288 w o rd s b y 8 b its d yn a m ic CMOS RAM s. The fa st page m ode ca p a b ility