K 2750 MOSFET Search Results

K 2750 MOSFET Result Highlights (5)

Part	Manufacturer	Description	Download
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E	Datasheet
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet

K 2750 MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: International S ] Rectifier HEXFET® Power MOSFET • • • • • • 4A55452 □014StlS 115 « I N R PD-9.593B IRC840 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements	OCR Scan	4A55452 014St IRC840	PDF
VMO 580-02F Abstract: ZY180L 580-02F Contextual Info: VMO 580-02F HipPerFETTM Module VDSS = 200 V ID25 = 580 A Ω RDS on = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Preliminary Data Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25 ID80 TC = 25°C TC = 80°C	Original	580-02F UL758, ZY180L 350mm VMO 580-02F 580-02F	PDF
Contextual Info: Advanced Technical Information MegaMOSTMFET Module VMO 580-02F VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25 ID80 TC = 25°C	Original	580-02F UL758, ZY180L 350mm ZY180R	PDF
ZY180L Abstract: ZY180R UL758 Contextual Info: HipPerFETTM Module VMO 580-02F VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Preliminary Data Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25 ID80 TC = 25°C TC = 80°C	Original	580-02F UL758, ZY180L 350mm ZY180R UL758	PDF
VMO 580-02F Abstract: zy180l Contextual Info: Advanced Technical Information MegaMOSTMFET Module VMO 580-02F VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25	Original	580-02F UL758, ZY180L 350mm ZY180R D-68623 VMO 580-02F	PDF
D-68623 Abstract: ZY180L ZY180R UL758 Contextual Info: Advanced Technical Information MegaMOSTMFET Module VMO 580-02T VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25	Original	580-02T UL758, ZY180L 350mm ZY180R D-68623 UL758	PDF
4835 mosfet Abstract: 6n80a Contextual Info: VDSS Standard Power MOSFET D ^025 IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V DS on 6A 6A 1.8 Q 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions V * OSS T j = 25°C to 150°C 800 V Tj = 25°C to 150°C; RGS = 1 MQ 800 V Vos Continuous ±20 V VGSM	OCR Scan	O-247 O-204 O-204 O-247 C2-62 4835 mosfet 6n80a	PDF
7N80 Abstract: all transistor data sheet 7N80 Contextual Info: HiPerFETTM Power MOSFETs IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID cont = 7 A RDS(on) = 1.4 W trr = 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	O-247 O-204 7N80 all transistor data sheet 7N80	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM	Original	6N100 O-247 O-204 10Source 100ms 6N100	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID cont = 7 A RDS(on) = 1.4 W = 250 ns trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	O-247 O-204	PDF
6N90 Abstract: N100 Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM	Original	6N100 O-247 O-204 10Source 100ms 6N100 6N90 N100	PDF
6N90 Abstract: IXFH6N100 Contextual Info: HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 6N90 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM	Original	6N100 O-247 O-204 6N100 10Source 6N90 IXFH6N100	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID cont = 7 A RDS(on) = 1.4 W trr = 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	O-247 O-204 100ms	PDF
n90a Abstract: IXTH Contextual Info: vDSS Standard Power MOSFET IXTH/IXTM 6 N90 900 V IXTH/IXTM 6 N90A 900 V pDS on ^D25 1.8 Q 1.4 Q 6A 6A N-Channel Enhancement Mode Test Conditions VOSS v DGR T j = 25°C to 150°C 900 T j = 2 5 “ C to 150°C; RGS = 1 Mi2 900 V C ontinuous ±20 V Transient	OCR Scan	O-247 O-204 6N90A C2-75 n90a IXTH	PDF

6N90 Abstract: 6N90A Contextual Info: IPIXYS Standard Power MOSFET IXTH/IXTM 6N90 IXTH/IXTM 6N90A VDSS ^D25 DS on 900 V 900 V 6A 6A 1.8 Q 1.4 Í2 D N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V ¥ dss T j =25°C to150°C 900 V VDQR Tj = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 900	OCR Scan	6N90A to150 O-247 O-204 O-204 O-247 IXTM6N90 IXTMGN90A 6N90	PDF
6n80 Abstract: N80A D-68623 IXTM6N80A Contextual Info: VDSS Standard Power MOSFET IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V ID25 6A 6A RDS on 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS	Original	O-247 O-204 O-204 O-247 6n80 N80A D-68623 IXTM6N80A	PDF
6n80 Abstract: 6n80a Contextual Info: Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A VDSS ID25 RDS on 800 V 800 V 6A 6A 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS	Original	6N80A O-204 O-247 O-247 6n80 6n80a	PDF
6N80 Contextual Info: Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A VDSS ID25 RDS on 800 V 800 V 6A 6A 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS	Original	6N80A O-204 O-247 6N80	PDF
Contextual Info: Standard Power MOSFET IXTH / IXTM 5N100 IXTH / IXTM 5N100A VDSS ID25 RDS on 1000 V 1000 V 5A 5A 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000	Original	5N100 5N100A O-204 O-247	PDF
Contextual Info: Standard Power MOSFET IXTH / IXTM 6N90 IXTH / IXTM 6N90A VDSS ID25 RDS on 900 V 900 V 6A 6A 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V VGS	Original	6N90A O-204 O-247	PDF
Contextual Info: 1 □IXYS v* D S S Standard Power MOSFET IXTH/IXTM 6 N90 900 V IXTH/IXTM 6 N90A 900 V D ^D25 DS on 6A 6A 1.8 Q 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions V woss ^ = 25°C to 150°C 900 V v DGR ^ = 25 °C to 150°C; RGS = 1 Mi2 900 V v es Continuous	OCR Scan	O-204 O-247 O-204	PDF
5n100 Abstract: 5N100A Contextual Info: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM	OCR Scan	N100A O-247 O-204 O-204 O-247 4bflb52b 5n100 5N100A	PDF
IXTH5N100A Abstract: gs 1117 ax Contextual Info: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000	OCR Scan	5N100 5N100A to150 O-247 O-204 O-204 O-247 IXTH5N100 IXTM5N100 IXTH5N100A gs 1117 ax	PDF
Contextual Info: mm T % r XYS Standard Power MOSFET v DSS IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80> 800 V p ^D25 DS on 6A 6A 1.8 ß 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 800 V v DGR Maximum Ratings T.J = 25°C to 150°C;* RGS„ = 1 MSi	OCR Scan	O-247 O-204 O-247 IXTH6N80A IXTM6N80A	PDF

K 2750 MOSFET Search Results

K 2750 MOSFET Result Highlights (5)

K 2750 MOSFET Datasheets Context Search

VMO 580-02F

ZY180L

VMO 580-02F

D-68623

4835 mosfet

7N80

6N90

6N90

n90a

6N90

6n80

6n80

6N80

5n100

IXTH5N100A