K 250 DIODE Search Results

1N2919

Abstract: CB47 RECTIFIER 1RM150 EV12R CB334 M80K M30K Thomson-CSF diodes de redressement 1N2887 mk plastique
Contextual Info: high voltage rectifier diodes o diodes de redressement haute tension THOMSON-CSF Types / T a m il 250 itiA •o Vr r m mA (V) = 50°C M 15 K/1N2887 M 20 K/1N 2891 1N 2897 M 30 K/1N 2901 1N 2905 M 40 K/1 N 2911 1N 2915 M 50 K/1N 2919 1N2921 M 60 K/1 N 2923

z diode

Contextual Info: Vorläufige Oaten Heizspannung Heizstrom T E L B P U N K B N EAlll Diode für Kippgeräte 6j2 Uf 1^ Volt Amp 1,4 Oxydkathode strahlungsgeheizt♦ Grenzwerte: Diodenspannung Mittlerer Dioden- Id gleichstrom 250 80 Spitzenstrom 1^ Spitze 250 Spannung zwischen

AD520* differential amplifier

Abstract: AD520* differential amplifier datasheet FDP360P AD5235 AD5235BRU250 amplitude controlled Wien Bridge Oscillator code 6A analog devices potentiometer Rheostat 1K Preset 200H AD5235BRU25
Contextual Info: FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Nominal Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection Wiper Settings Read Back Resistance Tolerance Stored in EEMEM1

BCP25

Abstract: laser diode spice model simulation 10xxxxh 8XXXXX hdmi shift SDI BCP250 APD spice model
Contextual Info: a Nonvolatile Memory, Dual 1024-Position Programmable Resistors ADN2850* FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Full-Scale Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection

BCP25

Abstract: 2850B25 ADN2850 ADN2850BCP25 ADN2850BCP25-RL7 TSSOP-16 200H 408C E 102H transistor
Contextual Info: a Nonvolatile Memory, Dual 1024-Position Programmable Resistors ADN2850* FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Full-Scale Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection

Contextual Info: K n o x S e m ic o n d u c t o r , I n c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4614 - 1N4121 TYPE NUMBER NOM ZENER VOLTAGE Vz @ 250 \iA VOLTS MAX REVERSE LEAKAGE CURRENT Ir @ Vr (Vdc) (liAdc) MAX ZENER IMPEDANCE Zzt @ 250 nA (OHMS) MAX NOISE

RWB 252

Abstract: AD5260 AD5235 AD5235B 5235B
Contextual Info: FEATURES Dual, 1024-Position Resolution 25 k⍀, 250 k⍀ Nominal Resistance Low Temperature Coefficient: 35 ppm/؇C Nonvolatile Memory1 Preset Maintains Wiper Settings Permanent Memory Write-Protection Wiper Settings Read Back Actual End-to-End Resistance Stored in EEMEM1

CS341202

Abstract: CS340602
Contextual Info: CS340602 CS341202 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Single Diode Modules 20 Amperes/600-1200 Volts A B L H K F C A L J ] E D G - DIA. A G .250 TAB F C K CS340602, CS341202 Fast Recovery Single Diode Modules

ad5255

Contextual Info: a 3-Channel, Dual 512 and Single 128 Position Digital Potentiometer with Nonvolatile Memory Preliminary Technical Data FEATURES 3-Channel: Dual, 512-Position Single 128-Position 25 kΩ, 250 kΩ Low Temperature Coefficient - 35ppm/°C Nonvolatile Memory1 Preset Maintains Wiper Settings

rheostat speed control circuit

Abstract: ADN2841 ADN2850 M68HC11 MC68HC16R1 MC68HC916R1 TSSOP-16 LFSCP-16 25955
Contextual Info: Nonvolatile Memory, Dual 1024-Position Digital Resistor ADN2850 Dual-channel, 1024-position resolution 25 kΩ, 250 kΩ nominal resistance Maximum ±8% nominal resistor tolerance error Low temperature coefficient: 35 ppm/°C 2.7 V to 5 V single supply or ±2.5 V dual supply

AD5255

Abstract: 200H AD5255BRU25 AD5255BRU250 AD5255BRU25-RL7 ADN2860 zener diode having 11 volts
Contextual Info: a 3-Channel, Dual 512 and Single 128 Position Digital Potentiometer with Nonvolatile Memory AD5255 Preliminary Technical Data FEATURES 3-Channel: Dual, 512-Position Single 128-Position 25 kΩ, 250 kΩ Low Temperature Coefficient - 35ppm/°C Nonvolatile Memory1 Preset Maintains Wiper Settings

Contextual Info: □IXYS v HiPerFET Power MOSFETs IXFN 26N90 Single Die MOSFET DSS IXFN 25N90 D DS on (cont) K 900 V 26 A 0.30 Q. 250 ns 900 V 25 A 0.33 Q. 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Low trr Preliminary data sheet s Maximum Ratings Symbol

r2b diode making

Abstract: 1s4555 AD5235
Contextual Info: FEATURES Dual-channel, 1024-position resolution 25 kΩ, 250 kΩ nominal resistance Maximum ±8% nominal resistor tolerance error Low temperature coefficient: 35 ppm/°C 2.7 V to 5 V single supply or ±2.5 V dual supply SPI-compatible serial interface Nonvolatile memory stores wiper settings

Contextual Info: □IXYS IXFH 10N100 IXFH 12N100 HiPerFET Power MOSFETs IXFH/FM 10N 100 IXFH/FM 12N100 IXFM 10N100 IXFM 12N100 ^DSS 1000 V 1000 V ^D25 10 A 12 A D DS on 1.20 a 1.05 a K 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol

Contextual Info: Preliminary Data Sheet v HiPerFET Power MOSFETs D DSS 800V 800V N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family ^D25 DS on 8A 9A 1.1Q 0.9 Q. K 250 ns 250 ns ?D G TO-247 AD (IXFH) As Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 150°C

MTH800

Abstract: MTH200 MTH400 MTH600 2108H
Contextual Info: 3 Phase Full Wave Bridge Rectifier MTH200 - MTH800 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D E F -.250 - G H J - K L M N P - R S Microsemi Catalog Number

Contextual Info: CM400DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Dual IGBTMOD 400 Amperes/250 Volts TC MEASURE POINT A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K Q K H U C1 P

cm400du

Abstract: CM400DU-5F
Contextual Info: CM400DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Dual IGBTMOD 400 Amperes/250 Volts TC MEASURE POINT A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K Q K H U C1 P

varactor 1N5148

Abstract: 1N5148 D0-204AA D0204
Contextual Info: 1N5148 TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The ASI 1N5148 is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 °C TJ -65 °C to +175 °C TSTG -65 °C to +200 °C

1N5142A

Contextual Info: 1N5142A TUNING VARACTOR DIODE DESCRIPTION: PACKAGE STYLE D0-204AA The ASI 1N5142A is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 °C TJ -65 °C to +175 °C TSTG -65 °C to +200 °C

1N5140A

Abstract: microwave varactor diode
Contextual Info: 1N5140A TUNING VARACTOR DIODE DESCRIPTION: PACKAGE STYLE D0-204AA The 1N5140A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C Millimeters

AHV1000

Abstract: AHV1001 AHV1002 AHV1003 AHV1005 AHV1006 AHV1008 C039 varactor sot-23
Contextual Info: AHV1000 SERIES SILICON HYPERABRUPT TUNING VARACTOR DESCRIPTION: PACKAGE STYLE SOT-23 SILICON HYPERABRUPT TUNING VARACTOR DIODES IN A SOT-23 PACKAGE IR V P.D. M1LUUETERS DIM A B C D G H J K 100nA@VR=20V 22V@IR=10|iA L S V 250 mW @ TC=25°C INCHES MIN MAX MIN

varactor diode

Abstract: 1N5142
Contextual Info: 1N5142 TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The 1N5142 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C

1N5148A

Contextual Info: 1N5148A TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The 1N5148A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C Millimeters