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    K 250 DIODE Search Results

    K 250 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Datasheet
    CUZ6V8
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Datasheet
    CUZ20V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, USC Datasheet
    CUZ24V
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Datasheet
    CEZ5V6
    Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Datasheet

    K 250 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N2919

    Abstract: CB47 RECTIFIER 1RM150 EV12R CB334 M80K M30K Thomson-CSF diodes de redressement 1N2887 mk plastique
    Contextual Info: high voltage rectifier diodes o diodes de redressement haute tension THOMSON-CSF Types / T a m il 250 itiA •o Vr r m mA (V) = 50°C M 15 K/1N2887 M 20 K/1N 2891 1N 2897 M 30 K/1N 2901 1N 2905 M 40 K/1 N 2911 1N 2915 M 50 K/1N 2919 1N2921 M 60 K/1 N 2923


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    K/1N2887 K/1N2891 M30K/1N2901 M40K/1N2911 K/1N2919 1N2921 80K/05RM CB-47/CB-48) 650mA ICB-47/CB-48) 1N2919 CB47 RECTIFIER 1RM150 EV12R CB334 M80K M30K Thomson-CSF diodes de redressement 1N2887 mk plastique PDF

    Contextual Info: K n o x S e m ic o n d u c t o r , I n c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4614 - 1N4121 TYPE NUMBER NOM ZENER VOLTAGE Vz @ 250 \iA VOLTS MAX REVERSE LEAKAGE CURRENT Ir @ Vr (Vdc) (liAdc) MAX ZENER IMPEDANCE Zzt @ 250 nA (OHMS) MAX NOISE


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    250jiA 1N4614 1N4121 1N4614 1N4615 1N4616 1N4617 1N4618 1N4619 1N4620 PDF

    CS341202

    Abstract: CS340602
    Contextual Info: CS340602 CS341202 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Single Diode Modules 20 Amperes/600-1200 Volts A B L H K F C A L J ] E D G - DIA. A G .250 TAB F C K CS340602, CS341202 Fast Recovery Single Diode Modules


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    CS340602 CS341202 Amperes/600-1200 CS340602, CS341202 CS340602 PDF

    Contextual Info: □IXYS v HiPerFET Power MOSFETs IXFN 26N90 Single Die MOSFET DSS IXFN 25N90 D DS on (cont) K 900 V 26 A 0.30 Q. 250 ns 900 V 25 A 0.33 Q. 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Low trr Preliminary data sheet s Maximum Ratings Symbol


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    26N90 25N90 OT-227 E153432 PDF

    r2b diode making

    Abstract: 1s4555 AD5235
    Contextual Info: FEATURES Dual-channel, 1024-position resolution 25 kΩ, 250 kΩ nominal resistance Maximum ±8% nominal resistor tolerance error Low temperature coefficient: 35 ppm/°C 2.7 V to 5 V single supply or ±2.5 V dual supply SPI-compatible serial interface Nonvolatile memory stores wiper settings


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    1024-position 100-year AD5235 AD5235 D02816-0-6/12 r2b diode making 1s4555 PDF

    Contextual Info: □IXYS IXFH 10N100 IXFH 12N100 HiPerFET Power MOSFETs IXFH/FM 10N 100 IXFH/FM 12N100 IXFM 10N100 IXFM 12N100 ^DSS 1000 V 1000 V ^D25 10 A 12 A D DS on 1.20 a 1.05 a K 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol


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    10N100 12N100 PDF

    IXYS CS 2-12

    Contextual Info: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD


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    15N60 20N60 O-247 IXYS CS 2-12 PDF

    MTH800

    Abstract: MTH200 MTH400 MTH600 2108H
    Contextual Info: 3 Phase Full Wave Bridge Rectifier MTH200 - MTH800 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D E F -.250 - G H J - K L M N P - R S Microsemi Catalog Number


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    MTH200 MTH400 MTH600 MTH800 MTH800 2108H PDF

    Contextual Info: CM400DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Dual IGBTMOD 400 Amperes/250 Volts TC MEASURE POINT A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K Q K H U C1 P


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    CM400DU-5F Amperes/250 PDF

    AHV1000

    Abstract: AHV1001 AHV1002 AHV1003 AHV1005 AHV1006 AHV1008 C039 varactor sot-23
    Contextual Info: AHV1000 SERIES SILICON HYPERABRUPT TUNING VARACTOR DESCRIPTION: PACKAGE STYLE SOT-23 SILICON HYPERABRUPT TUNING VARACTOR DIODES IN A SOT-23 PACKAGE IR V P.D. M1LUUETERS DIM A B C D G H J K 100nA@VR=20V 22V@IR=10|iA L S V 250 mW @ TC=25°C INCHES MIN MAX MIN


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    AHV1000 OT-23 100nA OT-23 CT2/CT20 V/vR20V 50MHz AHV1001 AHV1002 AHV1003 AHV1005 AHV1006 AHV1008 C039 varactor sot-23 PDF

    varactor diode

    Abstract: 1N5142
    Contextual Info: 1N5142 TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The 1N5142 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C


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    1N5142 D0-204AA 1N5142 CT4/CT60 varactor diode PDF

    1N5148A

    Contextual Info: 1N5148A TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The 1N5148A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C Millimeters


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    1N5148A D0-204AA 1N5148A CT4/CT60 PDF

    G236

    Abstract: 01197
    Contextual Info: ATV1000 SERIES SILICON ABRUPT TUNING VARACTOR DESCRIPTION: PACKAGE STYLE SOT-23 SILICON ABRUPT TUNING VARACTOR DIODES IN A SOT-23 PACKAGE •r 100nA@ Vr =24 VOLTS V 30 VOLTS @ Ir =10hA P.D. 250 mW @ TC=25°C DIM A 8 C G H J K L S V MILLIMETERS MIN MAX 28C


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    ATV1000 OT-23 OT-23 100nA@ ATV1001 ATV1002 ATV1003 ATV1004 ATV1005 G236 01197 PDF

    D2228N

    Abstract: D448N D5809N D758N
    Contextual Info: M3.2 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 35 V 200 V 70 V 400 V 140 V 800 V ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L


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    D448N D758N D2228N D5809N D2228N D448N D5809N D758N PDF

    D4457N

    Abstract: D2228N D448N D5807N D5809N D758N diode 1304 16-04 thyristor
    Contextual Info: M6 - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L


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    D448N D758N D2228N D5809N 22228N D4457N D2228N D448N D5807N D5809N D758N diode 1304 16-04 thyristor PDF

    Thyristor 1504

    Abstract: D2228N D448N D5809N D758N
    Contextual Info: B6 - Schaltung ~ ~ ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 80 V 200 V 165 V 400 V 340 V 800 V Kühlblöcke für Luftselbstkühlung - Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L


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    D448N D758N D2228N D5809N Thyristor 1504 D2228N D448N D5809N D758N PDF

    F0100106B

    Abstract: OF IC 715 GAAS FET AMPLIFIER for optical receiver PREAMPLIFIER TRANSIMPEDANCE optic fet error f08
    Contextual Info: 01.08.28 ♦ Features F0100106B 3.3 V / 156 Mb/s Receiver • Low voltage of +3.3 V single power supply • 15.5 kΩ high transimpedance • Typical 250 MHz broad bandwidth • 31.5 dB high gain • 0 dBm large optical input • Over 35 dB wide dynamic range


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    F0100106B F0100106B MIL-STD883C OF IC 715 GAAS FET AMPLIFIER for optical receiver PREAMPLIFIER TRANSIMPEDANCE optic fet error f08 PDF

    3771

    Abstract: C 5478 D2228N D448N D5809N D758N
    Contextual Info: M3.2 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 35 V 200 V 70 V 400 V 140 V 800 V ~ ~ ~ ~ ~ + Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L


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    D448N D758N D2228N D5809N 3771 C 5478 D2228N D448N D5809N D758N PDF

    Contextual Info: □ IXYS Advanced Technical Information IXFH 52N30Q IX F K 52N30Q IXFT 52N30Q HiPerFET Power MOSFETs Q -Class V,DSS ^D25 R DS on t = 300 V = 52 A = 60 mQ < 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Low Gate Charge and Capacitances


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    52N30Q O-247 PDF

    1314

    Abstract: 16813 D2228N D4457N D448N D5807N D758N d4457n m3.2
    Contextual Info: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d


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    D448N D758N D2228N D4457N D5807N 1314 16813 D2228N D4457N D448N D5807N D758N d4457n m3.2 PDF

    3771

    Abstract: 3942 9585 D2228N D448N D5809N D758N
    Contextual Info: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ + Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L


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    D448N D758N D2228N D5809N 182228N 3771 3942 9585 D2228N D448N D5809N D758N PDF

    transistor 5478

    Abstract: diode 3428 transistor c 6073 C 5478 D2228N D448N D5809N D758N
    Contextual Info: ~ ~ ~ B6 - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 80 V 200 V 165 V 400 V 340 V 800 V Kühlblöcke für verstärkte Luftkühlung Verlustl. P d Luftmen. v L Schaltung pro KB


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    D448N D758N D2228N D5809N transistor 5478 diode 3428 transistor c 6073 C 5478 D2228N D448N D5809N D758N PDF

    iec 60721-3-3

    Abstract: SKIM 4
    Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units 1200 1200 250 / 200 500 / 400 ± 20 625 –40 . +150 (125) 3600 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms per IGBT, THS = 25 °C


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    PDF

    Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units 1200 1200 250 / 200 500 / 400 ± 20 625 –40 . +150 (125) 3600 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms per IGBT, THS = 25 °C


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    PDF