K 250 DIODE Search Results

1N2919

Abstract: CB47 RECTIFIER 1RM150 EV12R CB334 M80K M30K Thomson-CSF diodes de redressement 1N2887 mk plastique
Contextual Info: high voltage rectifier diodes o diodes de redressement haute tension THOMSON-CSF Types / T a m il 250 itiA •o Vr r m mA (V) = 50°C M 15 K/1N2887 M 20 K/1N 2891 1N 2897 M 30 K/1N 2901 1N 2905 M 40 K/1 N 2911 1N 2915 M 50 K/1N 2919 1N2921 M 60 K/1 N 2923

Contextual Info: K n o x S e m ic o n d u c t o r , I n c LOW LEVEL ZENER DIODES LOW CURRENT: 250jiA - LOW NOISE 1N4614 - 1N4121 TYPE NUMBER NOM ZENER VOLTAGE Vz @ 250 \iA VOLTS MAX REVERSE LEAKAGE CURRENT Ir @ Vr (Vdc) (liAdc) MAX ZENER IMPEDANCE Zzt @ 250 nA (OHMS) MAX NOISE

CS341202

Abstract: CS340602
Contextual Info: CS340602 CS341202 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Single Diode Modules 20 Amperes/600-1200 Volts A B L H K F C A L J ] E D G - DIA. A G .250 TAB F C K CS340602, CS341202 Fast Recovery Single Diode Modules

Contextual Info: □IXYS v HiPerFET Power MOSFETs IXFN 26N90 Single Die MOSFET DSS IXFN 25N90 D DS on (cont) K 900 V 26 A 0.30 Q. 250 ns 900 V 25 A 0.33 Q. 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Low trr Preliminary data sheet s Maximum Ratings Symbol

r2b diode making

Abstract: 1s4555 AD5235
Contextual Info: FEATURES Dual-channel, 1024-position resolution 25 kΩ, 250 kΩ nominal resistance Maximum ±8% nominal resistor tolerance error Low temperature coefficient: 35 ppm/°C 2.7 V to 5 V single supply or ±2.5 V dual supply SPI-compatible serial interface Nonvolatile memory stores wiper settings

Contextual Info: □IXYS IXFH 10N100 IXFH 12N100 HiPerFET Power MOSFETs IXFH/FM 10N 100 IXFH/FM 12N100 IXFM 10N100 IXFM 12N100 ^DSS 1000 V 1000 V ^D25 10 A 12 A D DS on 1.20 a 1.05 a K 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol

IXYS CS 2-12

Contextual Info: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD

MTH800

Abstract: MTH200 MTH400 MTH600 2108H
Contextual Info: 3 Phase Full Wave Bridge Rectifier MTH200 - MTH800 Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes A B C D E F -.250 - G H J - K L M N P - R S Microsemi Catalog Number

Contextual Info: CM400DU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Trench Gate Design Dual IGBTMOD 400 Amperes/250 Volts TC MEASURE POINT A D F T - (4 TYP.) H G2 B E E2 C L J E1 CM G1 C2E1 S - NUTS (3 TYP) E2 Q K Q K H U C1 P

AHV1000

Abstract: AHV1001 AHV1002 AHV1003 AHV1005 AHV1006 AHV1008 C039 varactor sot-23
Contextual Info: AHV1000 SERIES SILICON HYPERABRUPT TUNING VARACTOR DESCRIPTION: PACKAGE STYLE SOT-23 SILICON HYPERABRUPT TUNING VARACTOR DIODES IN A SOT-23 PACKAGE IR V P.D. M1LUUETERS DIM A B C D G H J K 100nA@VR=20V 22V@IR=10|iA L S V 250 mW @ TC=25°C INCHES MIN MAX MIN

varactor diode

Abstract: 1N5142
Contextual Info: 1N5142 TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The 1N5142 is a Silicon HyperAbrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C

1N5148A

Contextual Info: 1N5148A TUNING VARACTOR DIODE PACKAGE STYLE D0-204AA DESCRIPTION: The 1N5148A is a Silicon Abrupt Junction Microwave Tuning Varactor Diode. Dim: A B D F K MAXIMUM RATINGS IF 250 mA VR 60 V PDISS 400 mW @ TA = 25 C TJ -65 C to +175 C TSTG -65 C to +200 C Millimeters

G236

Abstract: 01197
Contextual Info: ATV1000 SERIES SILICON ABRUPT TUNING VARACTOR DESCRIPTION: PACKAGE STYLE SOT-23 SILICON ABRUPT TUNING VARACTOR DIODES IN A SOT-23 PACKAGE •r 100nA@ Vr =24 VOLTS V 30 VOLTS @ Ir =10hA P.D. 250 mW @ TC=25°C DIM A 8 C G H J K L S V MILLIMETERS MIN MAX 28C

D2228N

Abstract: D448N D5809N D758N
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 35 V 200 V 70 V 400 V 140 V 800 V ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

D4457N

Abstract: D2228N D448N D5807N D5809N D758N diode 1304 16-04 thyristor
Contextual Info: M6 - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

Thyristor 1504

Abstract: D2228N D448N D5809N D758N
Contextual Info: B6 - Schaltung ~ ~ ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 80 V 200 V 165 V 400 V 340 V 800 V Kühlblöcke für Luftselbstkühlung - Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

F0100106B

Abstract: OF IC 715 GAAS FET AMPLIFIER for optical receiver PREAMPLIFIER TRANSIMPEDANCE optic fet error f08
Contextual Info: 01.08.28 ♦ Features F0100106B 3.3 V / 156 Mb/s Receiver • Low voltage of +3.3 V single power supply • 15.5 kΩ high transimpedance • Typical 250 MHz broad bandwidth • 31.5 dB high gain • 0 dBm large optical input • Over 35 dB wide dynamic range

3771

Abstract: C 5478 D2228N D448N D5809N D758N
Contextual Info: M3.2 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 35 V 200 V 70 V 400 V 140 V 800 V ~ ~ ~ ~ ~ + Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

Contextual Info: □ IXYS Advanced Technical Information IXFH 52N30Q IX F K 52N30Q IXFT 52N30Q HiPerFET Power MOSFETs Q -Class V,DSS ^D25 R DS on t = 300 V = 52 A = 60 mQ < 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Low Gate Charge and Capacitances

1314

Abstract: 16813 D2228N D4457N D448N D5807N D758N d4457n m3.2
Contextual Info: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ + Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d

3771

Abstract: 3942 9585 D2228N D448N D5809N D758N
Contextual Info: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ + Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

transistor 5478

Abstract: diode 3428 transistor c 6073 C 5478 D2228N D448N D5809N D758N
Contextual Info: ~ ~ ~ B6 - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 80 V 200 V 165 V 400 V 340 V 800 V Kühlblöcke für verstärkte Luftkühlung Verlustl. P d Luftmen. v L Schaltung pro KB

iec 60721-3-3

Abstract: SKIM 4
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units 1200 1200 250 / 200 500 / 400 ± 20 625 –40 . +150 (125) 3600 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms per IGBT, THS = 25 °C

Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units 1200 1200 250 / 200 500 / 400 ± 20 625 –40 . +150 (125) 3600 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms per IGBT, THS = 25 °C