K 227 Search Results

SIEMENS saw sensor

Abstract: c619 siemens matsua saw 45 S 867
Contextual Info: Index of Types Type Page C C 619 C 620 C 621 Page S 39 41, 42 43, 44 K K 1150 K 164 K 220 K 227 K 276 K 350 K 45 K 500 Type 45 49, 50 46 64 74 47 72, 73 68 S 153 S 235 S 236 S 237 S 238 S 364 S 464 S 861 S 863 S 867 S 869 S 891 76 77 78, 79 80 81, 82 83 84

Contextual Info: MCD 40 ITRMS = 2x 60 A ITAVM = 2x 38 A VRRM = 1200-1600 V Thyristor/Diode Module Preliminary data VRSM VDSM VRRM VDRM V V 1300 1700 1200 1600 A Type A/K G K SOT-227 B, miniBLOC MCD 40-12io6 MCD 40-16io6 G K A A/K K = Cathode, A = Anode, G = Gate, A/K = Common output

epcos 500 05

Abstract: B57227 K 227 epcos 500 B57227 B57276 K 276 b57745 B57020M
Contextual Info: Temperature Measurement Probe Assemblies Probe assemblies Page Probe assemblies B57703, M 703 B57227, K 227 B57500, M 500 B57500, K 500 B57501, K 501 B57020, M 2020 B57745, K 45 B57276, K 276 111 05/02 112 114 116 118 118 120 122 124 Herausgegeben von EPCOS AG

JESD-79

Abstract: ddr3 2133 jesd79 JESD79-3E
Contextual Info: NT4GC72B89C0NL K / NT4GC72C89C0NL(K) NT8GC72B4PC0NL(K) / NT8GC72C4PC0NL(K) / NT8GC72B8PC0NL(K) / NT8GC72C8PC0NL(K) NT16GC72B4NC0NL(K) / NT16GC72C4NC0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM

JESD79-3E

Abstract: 512Mx8 NT8GC72C4PC0NL D21-D20 512Mx8 SPD
Contextual Info: NT4GC72B89C0NL K / NT4GC72C89C0NL(K) NT8GC72B4PC0NL(K) / NT8GC72C4PC0NL(K) / NT8GC72B8PC0NL(K) / NT8GC72C8PC0NL(K) NT16GC72B4NC0NL(K) / NT16GC72C4NC0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM

JESD79-3E

Abstract: PC3-14900 DDR3 SDRAM PC3-14900
Contextual Info: NT4GC72B89B0NL K / NT4GC72C89B0NL(K) NT8GC72B4PB0NL(K) / NT8GC72C4PB0NL(K) / NT8GC72B8PB0NL(K) / NT8GC72C8PB0NL(K) NT16GC72B4NB0NL(K) / NT16GC72C4NB0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM

PC3-12800

Abstract: nanya 8gb DDR3 DIMM NT8GC72B4PB0NL NT8GC72C8PB0NL B.A date sheet 2012 D35BA
Contextual Info: NT4GC72B89B0NL K / NT4GC72C89B0NL(K) NT8GC72B4PB0NL(K) / NT8GC72C4PB0NL(K) / NT8GC72B8PB0NL(K) / NT8GC72C8PB0NL(K) NT16GC72B4NB0NL(K) / NT16GC72C4NB0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 512Mx8/1024Mx4 (4GB/8GB/16GB) SDRAM B-Die

srx 2039

Abstract: BASE200 NT8GC72C4NG0NL
Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

nkt 110/12

Abstract: ACY39 NKT221 germanium transistors PNP NKT 90 ACY20 ma902 ACY41 026 pnp
Contextual Info: PNP Germanium Transistors PN P Germanium A F A llo y Transistors in T 0 5 metal case fr <vce~ 6V-'c 1 m A Com m on Characteristics Type A C Y 18 19 20 21 22 39 A C Y 40 A C Y 41 A C Y 44 NKT221 N K T 222 N K T 223 N K T 224 N K T 225 N K T 226* N K T 227

srx 2039

Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

srx 2039

Abstract: JESD79-3E NT8GC72C4NG0NL
Contextual Info: NT2GC72B89G0NL K /NT2GC72C89G0NL(K) ) NT8GC72B4NG0NL(K)/NT8GC72C4NG0NL(K) 2GB: 256M x 72 / 4GB: 512M x 72 / 8GB: 1G x 72 PC3-10600 / PC3(L)-12800 / PC3-14900 Registered DDR3 SDRAM DIMM Based on DDR3-1333/1600/1866 256Mx8 (2GB/4GB) / 512Mx4 (4GB/8GB) SDRAM G-Die

ST110S10M

Abstract: S08P0V ST23O s04p 180RKI60 T110S12 230s16p0 t 180 s06p 110S12P
Contextual Info: International Thyristors liQRlRectifier Phase Control Type 125-440 Amps lT AV VRRM Part Number VDRM (V 80R K I10 80R K I20 80R K I40 80R K I60 80R K I80 8 0 R K I1 00 80R K I120 100 200 400 600 800 1000 1200 110RKI10 110RKI20 110RKI40 110RKI60 110RKI80 110RK I100

Contextual Info: r1 MCD40 Thyristor/Diode Module TRMS — •TAVM V RRM — 2x 60 A 2x 38 A 1200-1600 V Preliminary data V RSM V DSM V RRM V DRM V V 1300 1700 1200 1600 / Type A/K G K II SOT-227 B, miniBLOC r I I MCD 40-12io6 MCD 40-16io6 A/K K = Cathode, A = Anode, G = Gate,

2227MC-28-03-05-F1

Abstract: 2227MC-16-03-09-F1 2227mc-20-03-07-f1 2227MC 2227MC-08-03-18-F1 2227MC-14-03 2227MC-48-06-04-F1 2277MC
Contextual Info: REVISIONS PART NO. 2277MC Series ECN # REV DESCRIPTION DRAWN DATE CHECKD DATE APPRVD DATE - A RELEASED S. K 25/5/06 K. S 25/5/06 N. K 8/6/06 Specifications: Current Rating : 1.0A ac, dc. Contact Resistance : 20mΩ maximum. Insulator Resistance : 1000MΩ minimum.

STK6966

Abstract: aatj
Contextual Info: r x ^ : SAfiYO i j . - X So. 1689 N O . 16 8 9 A 2270 £ Lrt>*-C < ti*' t x\ S T K 6 9 6 6 DC^E — 9 "X,. ' X '""x K ^ - f /s: «ft * A^iarEKl-tff'li/fc •;r.rttHiwiff *v*. • À7j*-7>'C7u-*m&£fV • t t f r t t t t f t J f t P I K l'. • 7 U - * ff Ihi«0 « l f W K A t ' > « c t '•

elektor

Abstract: heft elektor schaltungen IC-Kartei Eine Sam m lu n g von Kurzdaten weit verbreiteter integrierter Schaltkreise Kurzdaten weit verbreiteter integrierter Schaltkreise schaltungen Schaltungen 1971
Contextual Info: IC-Kartei Eine Sam m lu n g von Kurzdaten weit verbreiteter integrierter Schaltkreise. Die K a rteik arten lassen sich ausschneiden und in einem O rd n er o d e r einem K arteik ästch en zu einer A rt ’’Selb stb au K a rte i” zusam m enfassen. Diese K artei

ETG81-050

Abstract: 1DI400 1DI400D-100 358 ez 802 ETK81-050 1DI300A-120 1DI200Z-100 1D500A-030 ETK85-050 ID200A-020
Contextual Info: - 237 - m±M. -n F — r BO o- _ k' T i =25°C I S f t r t iE ( V ) Ve E ft A V * . be * (A) (A) * * . t,t. ft k ft * m m R.b 0-0 VK (u s ) T (A) (A) (A) CV) I F k (A) (i¿&) M. k 1p V BE di/dt (A) (V) (A/í/s) * k 2.0 2.5 200 4.0 2.0 12 3.0 4.0 -4.0

Contextual Info: POWER INDUCTORS POWER INDUCTORS CDRH127/LD M OUTLINE Thinner core diameter and thicker wire diameter enables CDRH127/LD to be lower D.C.R than CDRH127. K DIMENSIONS mm 8.0MAX. 5.0 7.6 12.0 12.3MAX. 12.3MAX. K SATURATION CURRENT K LAND PATTERNS(mm) 1000.0

minidimm

Abstract: MT47H512M8 MT18HTS25672 MT18HTS51272 DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC25300 DDR2 module Dimensions
Contextual Info: 1GB, 2GB, 4GB: x72, DR 244-Pin DDR2 Registered MiniDIMM Features DDR2 SDRAM Registered MiniDIMM MT18HTS12872(P)K – 1GB MT18HTS25672(P)K – 2GB MT18HTS51272(P)K – 4GB (Advance‡) For component specifications, refer to Micron’s Web site: www.micron.com

DL-7750R

Abstract: HD1131R DL7750R HD11050 hd11310 NARG161 HD-11330 HD1075 HD-11310 DL-76510
Contextual Info: -65- « « 'S g it tfc ?, 1-f y 4-1 fe 3 * > ‘7 / “ K * tr > -f- V K K w •7t ¥ m f t ~k. f t 1 Í 7 ’^ 2 5 - C fö \7'„ = 25:C i Dp WHtit iá t . E n Xp (nm' AA (nm) 1F (m A ) G a A IA s 660 20 10 •9] y — K lv im cd) I f (m A ) (V ) 10 3.4

14MQ

Abstract: 14MQ 02 T-1227 M117 75MHZ H125 LT1228 lsoa fs2v 1-T1227
Contextual Info: - 163 - LT1 227/L T 1 2 2 8 3lt!K&iSgiOP7’ > - f SS is iijfp fX tlt a it — 10mA F S= ± 1 5 V , L = 0 V , Ta=25°C LT1228 ±2 V —±15V 10mA (V s= ± 1 5 V , K*,= 0 V , Ta= 25°C) 140MHz 100MHz 1100V/"S 3500V/us ±2 V —±15V LT1227 x X i V s=±loV, Rj= 1 k a \

ky 202

Abstract: DDR2-800 PC2-3200 PC2-5300 U1 LM 555 minidimm 80 pin miniDIMM A12208
Contextual Info: 256MB, 512MB, 1GB: x72, SR 244-Pin DDR2 Registered MiniDIMM Features DDR2 SDRAM Registered MiniDIMM MT9HTF3272(P)K – 256MB MT9HTF6472(P)K – 512MB MT9HTF12872(P)K – 1GB For component specifications, refer to Micron’s Web site: www.micron.com/products/dram/ddr2

valvo handbuch rohren

Abstract: VALVO Handbuch 6922 EH valvo E288CC E81L E180F VALVO GMBH E130L E186F
Contextual Info: VAIVO HANDBUCH S pezial-V erstärkerröhren 1970 S p e z ia l - V e r s tä r k e r r ö h r e n 1970 D a s V A L V O - H a n d b u c h ist v o r a lle m fü r K o n s tru k te u re und G e r ä t e e n t w ic k le r bestim m t. D a s H a n d b u c h g ib t k e in e A u s k u n ft ü b e r d ie L ie fe rm ö g lich k eit'

KS14

Abstract: 8AL050S-325F1-AN
Contextual Info: REVISIONS PART NO. 8AL050S-325F1-AN ECN # REV DESCRIPTION DRAWN DATE CHECKD DATE APPRVD DATE - A RELEASED S. K 14/4/06 K. S 14/4/06 N. K 28/4/06 Specifications: Insulator Material Contact Material Insulation Resistance Contact Resistance Dielectric Withstanding Voltage