K 2059 TRANSISTOR Search Results

pa 2030a

Abstract: 2SC4498 LB 1001 SANYO 2SA1722 k 2059 TRANSISTOR transistor npn d 2058 2028A bau 95
Contextual Info: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).

2SC4498

Abstract: 2SA1722
Contextual Info: SA NY O S E M I C O N D U C T O R CO RP 2SA1722, 2SC4498 E2E D 7T=i707b QQQ73fab 3 T -3 7 -/3 « r-35-/; ^ P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications 30M with Bias Resistances R1=2.2kQ, R2=10kQ F eatures 1Contains bias resistances (Rl=2.2kfl, R2= lOkfi).

k 2059 TRANSISTOR

Abstract: TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR
Contextual Info: SANY O S E M I C O N D U C T O R 2SE CORP D 7 cH ? 0 7 b 000 3^33 7 2SC4400 T -3 I-IS 'r;' ,>V ^ ’sx'*>V:- N P N Epitaxial Planar Silicon Transistor 2059 High-Frequency General-Purpose Amp Applications F eatu res . High power gain • High cutoff frequency

SANYO SS 1001

Abstract: 2SA1678 2SC4398 bau 95 T-37-I s2e transistor
Contextual Info: SANYO SEMICONDUCTOR CORP 2SA1678, 2SC4398 22E D TTTTOTb 000731=4 T T-37-/3 ” P N P /N P N Epitaxial Planar Silicon Transistors 2059 Switching Applications with Bias Resistances R1=10ki2, R 2=10k0 27 6 6 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

2sd444

Abstract: 2SD44 1SA16
Contextual Info: SAN YO S E M I C O N D U C T O R CORP 2SA1685, 2SC4443 S2E D 7 cH 7 G 7 b OOD7D7Ö T T -3 7-09 ~r-3S-c~i * P N P /N P N Epitaxial Planar Silicon Transistors 2059 High-Speed Switching Applications 32öO F eatu res • Fast switching speed •High gain-bandwidth product

IJ9 marking

Abstract: 2SC4396 2SA1676 27641 transistor npn d 2058 bau 95 BL 19 20-69 SANYO CE
Contextual Info: S A N Y O S E M I C O N D U C T O R CORP 2SA1676, 2SC4396 E2E D 7 ,H 7 0 7 b G0073LG S T - 37-/3 -r-JS-U . PN P /N PN Epitaxial Planar Silicon Transistors 2059 Switching Applications with Bias Resistances R1=47kQ, R2=47ki2 2764 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

2SC4365

Abstract: 2SC4402 SK200
Contextual Info: SANYO SEMICONDUCTOR CORP SSE 7=1=1707^ D D O O böbT 2SC4402 2 T-3Ì-/7 NPN Epitaxial Planar Silicon Transistor 2059 V/U M IX, OSC, Low-Voltage Amp Applications 2755 Applications • VHFAJHF MIX/OSC, low-voltage high-frequency amplifiers Features fT=3.0GHz typ Vce = 3V

sj 2038

Abstract: 2SD444 ic sj 2038 ANI 1015 IC ti 072 2SC1443 2SA1685 2SC4443 C4443 M685
Contextual Info: SAN YO S E M I C O N D U C T O R CORP 2SA1685, 2SC4443 S2E D 7 cH 7 G 7 b OOD7D7Ö T T -3 7-09 ~r-3S-c~i * P N P /N P N Epitaxial Planar Silicon Transistors 2059 High-Speed Switching Applications 32öO F eatu res • Fast switching speed •High gain-bandwidth product

mosfet k 2038

Abstract: TO-40-040 PCP MOSFET 2sd1851 TRANSISTOR transistor 2SA transistor 2 sa 72 2SB1205 2SC5155
Contextual Info: Produci Selection Guide by Function High-Voltage Applications Absolute maximum ratings Package Electrical characteristics T a = 2 5 t ICBO max @ VCB Type No. Page Type Drawing num ber VCBO (V ) VCEO (V ) vebo (V ) 1C (m A ) PC (m W ) A ICBOmax ( * A) VCB

45581

Abstract: marking YT 2SC485
Contextual Info: Ordering number : EN 4 5 5 8 2SC4851 i SAXYO i NPN Epitaxial Planar Silicon Transistor Muting Circuits F eatu res • Very small-sized package perm itting 2SC4851-applied sets to be made smaller and slimer. • Small output capacitance. • Low collector-to-emitter saturation voltage.

Contextual Info: Ordering number: EN 3485 No.3485 2SC4694 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Muting Applications F eatu res • Adoption of FBET process • High DC current gain •H igh Vebo V e b o = 25V • High reverse hpE (150 typ)

bulk inner box label ST

Contextual Info: 2N6427 MMBT6427 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

ic chip ic 4410

Abstract: 4410 ic
Contextual Info: O rd e rin g n u m b e r: E N 4 4 1 0 No.4410 SA%YO 2SC4909 NPN Epitaxial Planar Silicon Transistor Muting Circuits, Drivers F eatu res • High DC current gain. • On chip bias resistance Ri = 47kii, R2 = 47kf2 . •Very small-sized package perm itting 2SC4909-applied sets to be made sm aller and slimmer.

C-4555

Abstract: c4555
Contextual Info: O rd e rin g n u m b n r: EN 3 1 8 7 2SA1745/2SC4555 No.3187 PNP/NPN Epitaxial Planar Silicon Transistor S A \Y O Low-Frequency G eneral-Purpose _Amp A pplications Features •Very small-sized package perm itting the 2SAl745/2SC4555-applied sets to be made small and slim

2SD444

Contextual Info: I O rd e rin g n u m b e r EN 3200 iSA%YO 2SA1685/2SC4443 No.3200 PNP/NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • Fast switching speed • High gain-bandwidth product • Low saturation voltage : 2SA1685 A bsolute M axim um R atings at Ta = 25°C

2N4424

Abstract: gli rca RCA Solid State Power Transistor "to-98" package 2C3-42T94
Contextual Info: Dï SOLI» STATE ï Er| 3Ö750Ö1 DDlVTBb h 01E 17936 3875081 G E SOLID STATE - Signal Transistors- D T '35-/5’ 2N4424 Silicon Transistors F e a tu re s : • L o w Saturation Voltage ■ High B eta * 9 0 0 m W @ T c = 2 5 °C

SANYO CP Package

Contextual Info: PACKAGE DIMENSIONS OF SURFACE M O UN T TRANSISTORS Vol.2 • A l l of Sanyo Surface Mount T ransistor Vol.2 package dimensions are illustrated below. • A l l dimensions are in mm, and dimensions which are not followed by min. or max. are represented by typical values.

EN4410

Abstract: ic marking 4410 FXK 53 marking jn bx-0302 2SC4909
Contextual Info: Ordering n u m b e r:E N 4 4 1 0 2SC4909 No.4410 NPN Epitaxial Planar Silicon Transistor SM YO i Muting Circuits, Drivers F e a tu re s • High DC current gain. •On-chip bias resistance Ri = 47kO, R2 = 47kO . • Very small-sized package perm itting 2SC4909-applied sets to be made smaller and slimmer.

2SC3772

Abstract: 2SC4403
Contextual Info: Ordering number : EN 2756 _ 2 S C 4 4 0 3 NPN Epitaxial Planar Silicon Transistor VHF/UHF Local Oscillator Applications Applications • VHF/UHF oscillators Features • High cutoff frequency : fr = 3.0GHz typ : MAG= 12dB typ f=0.9GHz •High power gain

transistor npn d 2058

Abstract: 2SC4398 2SA1678 BU 2058 transistors marking HJ SANYO SS 1001
Contextual Info: SANYO SEMI CONDUCTOR CORP 2SA1678, 2SC4398 2EE D 71*170711 00073b4 T T -3 7 -/3 7~ ~ 3s-n Ä ^ P N P/N P N Epitaxial Planar S ilico n Tra nsisto rs 2059 Switching Applications with Bias Resistances R1=10kfl, R2=10kß @2766 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

transistor npn d 2058

Abstract: 2PD601A
Contextual Info: Philips Semiconductors BB bb53T31 N APIER 002b055 473 IA P X NPN general purpose transistor FEATURES objective specification b7E PHILIPS/DISCRETE 2PD601; 2PD601A PIN CONFIGURATION • High DC current gain • Low collector-emitter saturation voltage. DESCRIPTION

2SC4694

Abstract: TA11
Contextual Info: Ordering num ber: EN 3485 SM Ê YO i No.3485 2SC4694 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Muting Applications F eatu res • Adoption of FBET process • High DC current gain • High V eb o V e b o —25V • High reverse hpE (150 typ)

transistor kd 2059

Abstract: KD 2059 s2e transistor NPN S2e kd 616 transistor npn d 2058 2SC4397-appiled 2SA1677 2SC4397
Contextual Info: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

transistor npn d 2058

Abstract: k 2059 scr gate driver ic 2SA1677 2SC4397 s2e transistor
Contextual Info: SANYO SEMICONDUCTOR 2SA1677, 2SC4397 CORP 2EE D 7 T c170?fci 0D073L. 2 b T-37-13 T-3S-H « * P N P /N P N Epitaxial P lan ar S ilic o n T ran sis to rs 2059 Switching Applications with Bias Resistances R1=22ki2, R2=22kQ 2765 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit