JUNCTION DIODE Search Results

construction of varactor diode

Abstract: varactor PN diode
Contextual Info: Abrupt junction, VBIJ - 30 V .33 Abrupt junction, VBR= 45 V .34 Abrupt junction, VBJ = 60 V .35

HYPERABRUPT

Contextual Info: Abrupt and hyperabrupt junctions The abruptness of a junction refers to the rate of change n along the diode's C-V curve, i.e. the junction ca p a c ita n c e versus the applied voltage. If n ~ 0,5, the junction is a b r u p t; if n > 0,5, the junction is hyperabrupt.

Contextual Info: Table of Contents Page Page Tuning and Switching Diodes Abrupt Junction Tuning Diodes . . . . . . . . . . . . . . . . . . . . . Hyper−Abrupt Junction Tuning Diodes . . . . . . . . . . . . . . Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

905D1S

Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S2J0XX FEATURES • Multi-junction devices up to 40 W • Proven InGaAs / GaAs high reliability structure  High power multi-junction structure for narrow far field  Excellent temperature stability  Hermetic and custom designed package

Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S2J0XX FEATURES ƒ Multi-junction devices up to 40 W ƒ Proven InGaAs / GaAs high reliability structure ƒ High power multi-junction structure for narrow far field ƒ Excellent temperature stability ƒ Hermetic and custom designed package

Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S2J0XX FEATURES ƒ Multi-junction devices up to 40 W ƒ Proven InGaAs / GaAs high reliability structure ƒ High power multi-junction structure for narrow far field ƒ Excellent temperature stability ƒ Hermetic and custom designed package

characteristics of zener diode in reverse bias

Abstract: VRRM VRSM VBR pn junction full wave bridge rectifier
Contextual Info: Symbols SYMBOLS According IEC 147 and IEC 747-2 Cd, Diode Capacitance Total capacitance between the diode terminals due to case, junction and parasitic capacitance. Cj, Junction Capacitance Capacitance due to a p-n junction of the diode. It decreases with increasing reverse voltage.

Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S2J0XX FEATURES ƒ Multi-junction devices up to 40 W ƒ Proven InGaAs / GaAs high reliability structure ƒ High power multi-junction structure for narrow far field ƒ Excellent temperature stability ƒ Hermetic and custom designed package

max6674isa

Contextual Info: 19-2241; Rev 0; 11/01 Cold-Junction-Compensated K-Thermocoupleto-Digital Converter 0°C to +128°C Features ♦ Cold-Junction Compensation The MAX6674 cold-junction-compensation thermocouple-to-digital converter performs cold-junction compensation and digitizes the signal from a type-K

thermocouple to digital interface

Abstract: 68HC11A8 circuit with thermocouple application DIODE S5 Cold Junction Compensation Amplifier k thermocouple MAX6674 motorola 68hc11a8 THERMOCOUPLE AMPLIFIER thermocouple reference
Contextual Info: 19-2241; Rev 1; 8/02 Cold-Junction-Compensated K-Thermocoupleto-Digital Converter 0°C to +128°C Features ♦ Cold-Junction Compensation The MAX6674 cold-junction-compensation thermocouple-to-digital converter performs cold-junction compensation and digitizes the signal from a type-K

Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S3J0XX FEATURES ƒ Multi-junction devices up to 75 W ƒ 75 m, 150 μm and 225 μm source size ƒ 2.6 W/A efficiency ƒ Proven InGaAs / GaAs high reliability structure ƒ High power multi-junction structure for narrow far

905D1S

Abstract: 905D1S3 905D1S3J0XX 905D1S3J03X 905D1S3J09X 905D1S3J06X
Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S3J0XX FEATURES • Multi-junction devices up to 75 W • 75 m, 150 μm and 225 μm source size  2.6 W/A efficiency  Proven InGaAs / GaAs high reliability structure  High power multi-junction structure for narrow far

Contextual Info: 19-2241; Rev 0; 11/01 Cold-Junction-Compensated K-Thermocoupleto-Digital Converter 0°C to +128°C Features ♦ Cold-Junction Compensation The MAX6674 cold-junction-compensation thermocouple-to-digital converter performs cold-junction compensation and digitizes the signal from a type-K

pn junction diode structure

Abstract: PIN diode
Contextual Info: Section 2 PIN Diode Features A PIN diode has an intrinsic semiconductor layer I layer in the middle of the PN junction, which makes it a diode with a P-I-N junction. It is a high frequency variable resistor that can change its high frequency series resistance (rf) by controlling the forward current applied to the junction.

Contextual Info: Certificate : TH97/10561QM TVR5B GLASS PASSIVATED JUNCTION FAST RECOVERY DIODE M1A PRV : 100 Volts Io : 0.5 Amperes FEATURES : * * * * * * * Certificate : TW00/17276EM Glass passivated junction chip High surge current capability High reliability Low reverse current

zener 1n4740A

Abstract: 1M200Z 1N4740A 1N4741A 1N4742A 1N4743A 1N4744A zener single green band glass ZENER SINGLE COLOR CODE E10 Zener
Contextual Info: m 1N4740A - 1 M200Z TAIWAN SEMICONDUCTOR . Pb 1.0 Watts Glass Passivated Junction Silicon Zener Diode RoHS COMPLIANCE DO-41 -MSB- Features :<sro D IA . •w~ Low profile package Built-in strain relief Glass passivated junction

Contextual Info: ZENER DIODE AW01 FEATURES OUTLINE DRAWING • For stabilized power supply. • Diffused-junction. Glass passivated and encapsulated. ABSOLUTE MAXIMUM RATINGS Items Symbols Ratings Units Permissible Power Dissipation P W 1.0 Operating Junction Temperature Tj

2850KT

Abstract: 2850MT 1200 RTV 1N5550 1N6515 2850FT RTV-615 scotchcast epoxy potting material diode with piv of 40v
Contextual Info: APPENDIX B Diode Thermal Analysis Controlling junction temperature is key to reliable semiconductor package design. High voltage diodes present unique junction temperature problems which must be addressed. In high voltage diodes, heat is generated primarily by:

20M diode zener

Abstract: MARKING LY toshiba U02Z300 U02Z300-X U02Z300-Y U02Z300-Z TOSHIBA DIODE GLASS
Contextual Info: TOSHIBA U02Z300 TOSHIBA DIODE CONSTANT VOLTAGE REGULATION SILICON DIFFUSED JUNCTION TYPE ZENER DIODE U02Z300 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL p* Tj Tstg RATING 200

Contextual Info: 1N5391GP . 1N5399GP 1.5 Amp. Glass Passivated Junction Rectifier Current 1.5 A to 70º C Voltage 50V to 1000 V DO-15 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction

1N5391GP

Abstract: 1N5399GP JESD22-B102 J-STD-002 DO15R
Contextual Info: 1N5391GP . 1N5399GP 1.5 Amp. Glass Passivated Junction Rectifier Current 1.5 A to 70º C Voltage 50V to 1000 V DO-15 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction

Contextual Info: 1N5391GP . 1N5399GP 1.5 Amp. Glass Passivated Junction Rectifier Current 1.5 A at 70º C Voltage 50V to 1000 V DO-204AC DO-15 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction

Contextual Info: GP30A . GP30Q 3.0 Amp. Glass Passivated Junction Rectifier Current 3.0 A at 55º C Voltage 50V to 1200 V DO-201AD DO-27 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction

Contextual Info: GP20D . GP20M 2.0 Amp. Glass Passivated Junction Rectifier Current 2.0 A at 55º C Voltage 200V to 1000 V DO-204AC DO-15 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction