905D1S Search Results

905D1S

Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S2J0XX FEATURES • Multi-junction devices up to 40 W • Proven InGaAs / GaAs high reliability structure  High power multi-junction structure for narrow far field  Excellent temperature stability  Hermetic and custom designed package

905D1S03UA

Abstract: 905D1S3J06UA 905D1S3J09UA 905D1S3
Contextual Info: High End / Low Cost Pulsed Laser Diodes 905D1SxxUA-Series FEATURES • Single and Multi-junction devices up to 75 W • Hermetic 5.6 mm CD package  Excellent temperature stability  Ultra precise mechanical tolerances  Fully RoHS compliant APPLICATIONS

905D1S03UA

Abstract: 905D1S3J09UA
Contextual Info: Laser Diodes High End / Low Cost Pulsed Laser Diodes 905D1SxxUA-Series Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ Single and Multi-junction devices up to 75 W Hermetic 5.6 mm CD package Excellent temperature stability Ultra precise mechanical tolerances Fully RoHS compliant

905D1S03UA

Abstract: 905D1S3J09UA 905D1S3J03UA
Contextual Info: High End / Low Cost Pulsed Laser Diodes 905D1SxxUA-Series FEATURES • Single and Multi-junction devices up to 75 W • Hermetic 5.6 mm CD package  Excellent temperature stability  Ultra precise mechanical tolerances  Fully RoHS compliant APPLICATIONS

Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S2J0XX FEATURES ƒ Multi-junction devices up to 40 W ƒ Proven InGaAs / GaAs high reliability structure ƒ High power multi-junction structure for narrow far field ƒ Excellent temperature stability ƒ Hermetic and custom designed package

Contextual Info: Laser Diodes High Power Multi-Junction Pulsed Laser Diodes 905D1S3J0XX Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ Multi-junction devices up to 75 W 75 µm, 150 µm and 225 µm source size 2.6 W/A efficiency Proven InGaAs / GaAs high reliability structure

Contextual Info: High End / Low Cost Pulsed Laser Diodes 905D1SxxUA-Series FEATURES ƒ Single and Multi-junction devices up to 75 W ƒ Hermetic 5.6 mm CD package ƒ Excellent temperature stability ƒ Ultra precise mechanical tolerances ƒ Fully RoHS compliant APPLICATIONS

Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S3J0XX FEATURES ƒ Multi-junction devices up to 75 W ƒ 75 m, 150 μm and 225 μm source size ƒ 2.6 W/A efficiency ƒ Proven InGaAs / GaAs high reliability structure ƒ High power multi-junction structure for narrow far

Contextual Info: Laser Diodes High End / Low Cost Pulsed Laser Diodes 905D1SxxUA-Series Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ Single and Multi-junction devices up to 75 W Hermetic 5.6 mm CD package Excellent temperature stability Ultra precise mechanical tolerances Fully RoHS compliant

Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S2J0XX FEATURES ƒ Multi-junction devices up to 40 W ƒ Proven InGaAs / GaAs high reliability structure ƒ High power multi-junction structure for narrow far field ƒ Excellent temperature stability ƒ Hermetic and custom designed package

905D1S

Abstract: 905D1S3 905D1S3J0XX 905D1S3J03X 905D1S3J09X 905D1S3J06X
Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S3J0XX FEATURES • Multi-junction devices up to 75 W • 75 m, 150 μm and 225 μm source size  2.6 W/A efficiency  Proven InGaAs / GaAs high reliability structure  High power multi-junction structure for narrow far

Contextual Info: High Power Multi-Junction Pulsed Laser Diodes 905D1S2J0XX FEATURES ƒ Multi-junction devices up to 40 W ƒ Proven InGaAs / GaAs high reliability structure ƒ High power multi-junction structure for narrow far field ƒ Excellent temperature stability ƒ Hermetic and custom designed package

Contextual Info: High Power Pulsed Laser Diodes 905D3J08-Series FEATURES ƒ Nanostack devices up to 210 Watts ƒ Proven InGaAs / GaAs high reliability structure ƒ High power large-optical-cavity LOC structure for a narrow far-field ƒ Excellent temperature stability ƒ

Contextual Info: High Power Pulsed Laser Diodes 905-Series FEATURES Single and stacked devices up to 130 Watts Proven AlGaAs high reliability structure 1 W/A efficiency with 25° beam divergence Excellent temperature stability Hermetic and custom designed package APPLICATIONS

Contextual Info: Laser Diodes High Power Pulsed Laser Diodes 905D3J08-Series Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ Nanostack devices up to 650 Watts Proven InGaAs / GaAs high reliability structure High power large-optical-cavity LOC structure for a narrow far-field

Contextual Info: Pulsed Laser Diode Module LS-Series DESCRIPTION The LS-series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a +12 VDC supply and a trigger

Contextual Info: High Power Pulsed Laser Diodes 905-Series FEATURES Single and stacked devices up to 130 Watts Proven AlGaAs high reliability structure 1 W/A efficiency with 25° beam divergence Excellent temperature stability Hermetic and custom designed package APPLICATIONS

905D3S3J08X

Contextual Info: High Power Pulsed Laser Diodes 905D3J08-Series Features - Nanostack devices up to 220 Watts Proven InGaAs / GaAs high reliability structure High power large-optical-cavity LOC structure for a narrow far-field Excellent temperature stability Hermetic and custom

905D1S

Contextual Info: Laser Diodes High Power Pulsed Laser Diodes 905-Series Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ Single and stacked devices up to 130 Watts Proven AlGaAs high reliability structure 1 W/A efficiency with 25° beam divergence Excellent temperature stability

905D2S3J09X

Abstract: 905D1S3J09X 905D1S
Contextual Info: High Power Pulsed Laser Diodes 905D3J09-Series FEATURES • Multi-Junction devices up to 200 Watts • Proven InGaAs / GaAs high reliability structure  High power large-optical-cavity LOC structure for a narrow far-field  Excellent temperature stability

905D2S3J09X

Abstract: pulsed laser diode GaAs 905 905D1S3J09X 905D3S3J09X COAX 6 SAS UM800
Contextual Info: High Power Pulsed Laser Diodes 905D3J09-Series FEATURES • Multi-Junction devices up to 200 Watts • Proven InGaAs / GaAs high reliability structure  High power large-optical-cavity LOC structure for a narrow far-field  Excellent temperature stability

905D3S3J08X

Abstract: pulsed laser diode GaAs 905 905D3J08
Contextual Info: High Power Pulsed Laser Diodes 905D3J08-Series FEATURES • Nanostack devices up to 210 Watts • Proven InGaAs / GaAs high reliability structure  High power large-optical-cavity LOC structure for a narrow far-field  Excellent temperature stability

Contextual Info: Pulsed Laser Diode Module LC-Series DESCRIPTION The LC-series of pulsed laser diode modules offer all of the features needed to safely drive pulsed lasers of different powers, in a compact housing. The modules are easy to handle and require only a +12 VDC supply and a trigger

Contextual Info: Laser Diodes High Power Pulsed Laser Diodes 905D3J08-Series Features ▪▪ ▪▪ ▪▪ ▪▪ ▪▪ Nanostack devices up to 650 Watts Proven InGaAs / GaAs high reliability structure High power large-optical-cavity LOC structure for a narrow far-field