JUN22 Search Results

crb 455

Abstract: Voltage Doubler UMA1015M UMA1015
Contextual Info: PÂTÂ @ y iI T UMA1015M Low-power dual frequency synthesizer for radio communications Product specification Supersedes data of October 1994 File under Integrated Circuits, IC03 Philips Semiconductors 1995 Jun22 PHILIPS Philips Semiconductors Product specification

BAT60B

Contextual Info: BAT60B 2 Silicon Schottky Diode 1
High current rectifier Schottky diode with low V F drop
Low voltage, low inductance
For power supply VPS05176
For detection and step-up-conversion Type BAT60B Marking white/5 Pin Configuration 1=C 2=A Package SOD323

VPS05163

Abstract: BAT70-05
Contextual Info: BAT70-05 Silicon Schottky Diode 4
Parallel connection for maximum I F per package 3
Low forward voltage drop 2
For power supply 1
For clamping and protection VPS05163 2, 4 1 3 EHA00005 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP196

Abstract: VPS05178
Contextual Info: BFP196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

BFQ19S

Contextual Info: BFQ19S NPN Silicon RF Transistor 1
For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!

XSR Porting Guide

Abstract: BML STL samsung s3c2440 user manual SAMSUNG NAND FLASH TRANSLATION LAYER SAMSUNG NAND FLASH TRANSLATION LAYER FTL NAND XSR EPOC32 xsr v1.6.1 Extended Sector Remapper onenand xsr
Contextual Info: UniStore II v1.5.1 Installation Guide JUN-22-2006, Version 3.4 Copyright notice Copyright ⓒ Samsung Electronics Co., Ltd All rights reserved. Trademarks UniStore II is a trademark of Samsung Electronics Co., Ltd in Korea and other countries. Restrictions on Use and Transfer

BFQ19S E6327

Abstract: BAW78D BFQ19S E6327
Contextual Info: BFQ19S NPN Silicon RF Transistor 1
For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!

IC 7437

Abstract: BFR360F
Contextual Info: BFR360F NPN Silicon RFTransistor Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP196W

Contextual Info: BFP196W NPN Silicon RF Transistor 3
For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA
Power amplifier for DECT and PCN systems 2
fT = 7.5 GHz 1 VPS05605

BFP196

Contextual Info: BFP196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

Contextual Info: BFP196W NPN Silicon RF Transistor 3
For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA
Power amplifier for DECT and PCN systems 2
fT = 7.5 GHz 1 VPS05605

BAT60A

Contextual Info: BAT60A Silicon Schottky Diode 2
High current rectifier Schottky diode 1 with extreme low VF drop
For power supply
For clamping and protection in low voltage applications
For detection and step-up-conversion VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution!

GP 005 DIODE

Abstract: BAR50-02V SC79
Contextual Info: BAR50-02V Silicon PIN Diode 2
Current-controlled RF resistor for switching and attenuating applications
Especially useful as antenna switch 1 in mobile communication VES05991
Low forward resistance, small capacitance
Low inductance
Small SCD package

Contextual Info: SPECIFICATION FOR APPROVAL Customer. Description. Part No. Delta Model No. Sample Issue No. Sample Issue Date. DC FAN QFR0824SH-DT50 REV. REV. JUN-22-2013 PLEASE SEND ONE COPY OF THIS SPECIFICATION BACK AFTER YOU SIGNED APPROVAL FOR PRODUCTION PRE-ARRANGEMENT.

Contextual Info: REVISIONS SYM A - - 8 6 .40 ECN, ZO NE PER ERN ECN NO. APPRD. DATE JU N 22/07 LCHAN 07202 [3 .4 0 2 ] - -2 7 .4 5 [1.081 —1 H

Contextual Info: BFQ19S NPN Silicon RF Transistor 1
For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFP196W NPN Silicon RF Transistor 3
For low noise, low distortion broadband 4 amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 89 mA
Power amplifier for DECT and PCN systems 2
fT = 7.5 GHz 1 VPS05605

BB833

Contextual Info: BB833 Silicon Tuning Diode 2
Extended frequency range up to 2.5 GHz; 1 special design for use in TV-sat indoor units
High capacitance ratio VPS05176 Type Marking Pin Configuration Package BB833 white X 1=C SOD323 2=A Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: SPECIFICATION FOR APPROVAL Customer. Description. Part No. Delta Model No. Sample Issue No. Sample Issue Date. DC FAN GFC0624DW-DT48 REV. REV. JUN-22-2013 PLEASE SEND ONE COPY OF THIS SPECIFICATION BACK AFTER YOU SIGNED APPROVAL FOR PRODUCTION PRE-ARRANGEMENT.

Contextual Info: 01 PAGE JUN-22-2000 ARRANGEMENT Of CONrACTS MO. OF CONTACTS 3 CONTACTS 4 CONTACTS 5 CONTACTS 2MJ—1511—008 2 U J - 15t 2 -0 0 8 2 M J -I5 1 3 —008 m 6 CONTACTS 7 CONTACTS 8 CONTACTS 2M J-1514-006 2 U J -IS 1 5 -0 0 8 2M J-1S16-00B 14:0? SERIES NO. T 'Î .

Contextual Info: BFP196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

Contextual Info: BFP196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

BB555

Abstract: SCD80 SMD DIODE MARKING 1401
Contextual Info: BB555 Silicon Tuning Diode 2
For UHF-TV-tuners
High capacitance ratio
Low series inductance 1
Low series resistance VES05991
Extremely small plastic SMD package
Excellent uniformity and matching due to "in-line" matching assembly procedure Type

BB555-02V

Abstract: SC79
Contextual Info: BB555-02V Silicon Tuning Diode 2
For UHF-TV-tuners
High capacitance ratio
Low series inductance 1
Low series resistance VES05991
Extremely small plastic SMD package
Excellent uniformity and matching due to "in-line" matching assembly procedure