JUN09 Search Results

Contextual Info: 7 8 6 5 3 4 1 2 REV - DESCRIPT - DATE - APPRVD A - NEW PER EAR 13254 - JUN09/08 - K.L. . 0.40 0.05 [.016 .002] X 2.00 0.10 [.079 .004] GROUND TAILS 2 PLCS . 0.40 0.05 [.016 .002] X 0.25 0.03 [.010 .001] CONTACT TAILS (5 PLCS) F 2.25±0.30 .089±.012 12.2

BDFB

Abstract: ED83368-30 402328926 407998244 ED8336830 bullet breaker panel CC848808551 CC408617410 CC109145463 407998160
Contextual Info: Micro-BDFB and DC Distribution Panel Ordering Guide – Model: ED83368-30 Measuring just 7 inches 4U tall, these versatile 19” and 23” rack or wall mounted panels can be configured as simple dc distribution panels or as micro-bdfb’s* providing monitored secondary

2603L

Abstract: SE2603L SIGE2603L
Contextual Info: SE2603L 2.4 GHz High Efficiency Wireless LAN Front End Preliminary Applications Product Description • •  The SE2603L is a complete 802.11bgn WLAN RF front-end module providing all the functionality of the power amplifier, power detector, diversity switch and

SEM 2006

Abstract: P1308ATG transistor sem 2006
Contextual Info: P1308ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 75 13mΩ 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

ansoft software

Abstract: IPC-9501 ISM2400 ISM900 Q62702-G0080 smd marking code vd SCT595 D2 DIN 6784
Contextual Info: GaAs MMIC CGY 196 Data Sheet • • • • • • • • • Multiband Power Amplifier [800 … 3500 MHz] DECT, PHS, PWT, Bluetooth, ISM900, ISM2400, WLL Single Voltage Supply Operating voltage range: 2 V to 6 V Pout = 25.5 dBm at Vd = 2.4 V Pout = 26.0 dBm at Vd = 3.0 V

Contextual Info: AO4492L 30V N-Channel MOSFET General Description Features The AO4492L uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS (V) = 30V ID = 14A

IR P116

Contextual Info: D im e n s io n s : 0 .50 3. E l e c t r i c a l s o la tio n Max LO ° X '' ~n r m 0 ,0 3 0 0.020 1 0.01 6 0 .0 0 8 0 .0 2 0 TypJ 0 .350 0 .0 5 0 nnnnnnf m co x CM ° O • YYWW ¡ m u t : 0.01 8+0.002 2. S c h e m a t ic : o m CN o IT O m m ro ro O O @ 100KHz 50m V

ev 2816

Abstract: ic rom 2816 VPS05605 transistor bfp 520 gummel
Contextual Info: SIEGET
45 BFP 520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1
Gold metallization for high reliability

ujt 2646

Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
Contextual Info: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!

Contextual Info: SIEGET
45 BFP 520F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V 3 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB 2 4 1
For oscillators up to 15 GHz
Transition frequency fT = 45 GHz TSFP-4

D2 DIN 6784

Abstract: D3 DIN 6784
Contextual Info: GaAs MMIC CGY 196 Data Sheet • • Multiband Power Amplifier [800 … 3500 MHz] DECT, PHS, PWT, Bluetooth, ISM900, ISM2400, WLL • Single Voltage Supply • Operating voltage range: 2 V to 6 V • POUT = 25.5 dBm at VD = 2.4 V • POUT = 26.0 dBm at VD = 3.0 V

Contextual Info: NOTES: MATERIALS AND FINISHES: B O D Y , C O U P L I N G NUT- BRASS, NICK EL PLATING. CONTACT- BRASS, SILVER PLATING. S P R IN G W A S H ER - BeCu, NIC KEL PLATING. INSULATOR- PTFE ELECTRICAL: A. I M P E D A N C E : 5 0 O H M B. D I E L E C T R I C W I T H S T A N D I N G V O L T A G E : 3 0 0 0 V R M S ,

AO4406AL

Contextual Info: AO4406AL 30V N-Channel MOSFET General Description Features The AO4406AL uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS (V) = 30V

D2 DIN 6784

Abstract: SMD MARKING CODE V75 Ansoft rf marking Y2 ISM2400 ISM900 Q62702-G0080 smd marking code vd GPW09182 v75 smd
Contextual Info: GaAs MMIC CGY 196 Data Sheet • • Multiband Power Amplifier [800 … 3500 MHz] DECT, PHS, PWT, Bluetooth, ISM900, ISM2400, WLL • Single Voltage Supply • Operating voltage range: 2 V to 6 V • POUT = 25.5 dBm at VD = 2.4 V • POUT = 26.0 dBm at VD = 3.0 V

tcm8210

Abstract: TCM8210MD ALC 655 VGA camera module TCM8210MDA ITU656 RGB565 YUV422 0YUV422 QCIF
Contextual Info: TCM8210MD A Ver. 2.07 TOSHIBA C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TCM8210MD (A) TENTATIVE VGA CAMERA MODULE The TCM8210MD(A) is a camera module which includes area color image sensor embedded with camera signal processor that meets with VGA format. In the sensor area 492 vertical and 660 horizontal signal pixels, and the image

MRMS

Abstract: XF4664S
Contextual Info: 1. D i m e n s i o n s : .0 0 0 M ax 2 5 .4 0 Max 2. S c h e m a tic : o 16 TO X M IT R AAR AAR A o XFM RS YYWW • XF 4 6 6 4 S 4 HAAHAAHH 0.5 9 0 M a x 0 .5 0 0 T yp 9.90 1? Max 14 RM RCV 0000 0.46 Typ 2 .5 4 0 .700 CABLE 100 OHMS 100 OHMS 0 .018 CABLE 100 OHMS

BFP-540

Abstract: VPS05605 transistor BO 540 Transistor MJE 540
Contextual Info: SIEGET
45 BFP 540 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB
Gold metallization for high reliability 2
SIEGET
45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEGET
45 BFP 540F NPN Silicon RF Transistor Preliminary data XYs
For highest gain low noise amplifier at 1.8 GHz 3 Outstanding Gms = 21 dB Noise Figure F = 0.9 dB 2 4 1
Gold metallization for high reliability
SIEGET
45 - Line TSFP-4 to p v ie w !

Contextual Info: SIEGET
25 BFP 405F NPN Silicon RF Transistor XYs Preliminary data
For low current applications
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.25 dB at 1.8 GHz 2 4 outstanding G ms = 23 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

Contextual Info: SIEGET
25 BFP 420F NPN Silicon RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.15 dB at 1.8 GHz 2 4 outstanding G ms = 22 dB at 1.8 GHz
Transition frequency f T = 25 GHz

Contextual Info: BFP 620F NPN Silicon Germanium RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 0.65 dB at 1.8 GHz 2 4 outstanding G ms = 21 dB at 1.8 GHz 1 • Gold metallization for extra high reliability