JUN03 Search Results

Contextual Info: Alle Buhle wbehallen/ 411 t i j t l s t t s m t i 2,54 89, Printed 2,54 1,27 3,81 -3-* 1. contact 1er contact 1. ln 4,1 — C sl Kon tok t 1st contact 1er contact 6,3 M -l" V ^ il 00.05 co <x> GO LO t K O 0,55 2,54 holes LO <x> LAJ oil 0,64x0,64 4 o I oyout

Contextual Info: Alle Bechle torbehallen/ i l l rights rts trn i 3 71,32 ±1 b 3,81 2, 54 x2 4= 6 0 , 9 6 1 , 27i 1,27 P r i n t e d boord Ioyout Component side 2, 54 1) E i n l o t s t i f t e possend fur Lochungen 01 ±0,1 noch I EC 60326-3 Solder p in s f o r PCB connections

MC9S12XHY128

Abstract: MC9S12XHY256 0M23Y 9S12XHY256 9s12hy64 dps 161 psu MC9S12XHY LCD40F4BV2 bosch can 2.0A S12XHY256
Contextual Info: MC9S12XHY256 Reference Manual Covers MC9S12XHY Family Data Sheet: Advance Information This document contains information on a new product. Specifications and information here in are subject to change without notice. S12 Microcontrollers MC9S12XHY256RMV1 Rev. 0.12

Contextual Info: MC9S12XHY256 Reference Manual Covers MC9S12XHY Family Data Sheet: Advance Information This document contains information on a new product. Specifications and information here in are subject to change without notice. S12 Microcontrollers MC9S12XHY256RMV1 Rev. 1.01

Contextual Info: 7 8 RELEASED FOR PUBLICATION THIS DRAWING 15 UNPUBLISHED. 0 COPYRIGHT 19 BY AMP INCORPORATED. 6 5 ,19 ALL RIGHTS RESERVED. 25 D C 4 9 = 9 MAX 0 . 9 5 MAX 24 SPACES AT 2 . 0 B 25 eO dO c o bo a 0 EDGE OF PC BOARD o o o o o o o o o o o o o o o o o o o o

A1s sot23

Abstract: A1S diode BAW56 diode a1s Marking a1s BAW56S a1s marking BAW56T BAW56U BAW56W
Contextual Info: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U $ ! " # , ! ,  , " ,  Type BAW56 BAW56S BAW56T BAW56U BAW56W ,   , ! Package SOT23 SOT363 SC75 SC74 SOT323 Configuration

15v 60w smps

Abstract: Q67040-S4594 Q67040-S4595 IKB03N120H2 IKP03N120H2 IKW03N120H2
Contextual Info: IKP03N120H2, IKW03N120H2 IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter C G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

ISS254

Abstract: 09185206324 F-95972
Contextual Info: Alle B u h l e lorbehallen/ 411 t ijt ls t t s m t i 2,54 33,02 x9 = 2 2 , 8 6 2,54 ,27 3,81 ln <V| M CVI CT i 1. 4 4 4 «LU xU - M e * Component * Kon tak t 1st c o n t a c t — 1 er 1. /,j 1er side il all con tac t ^ holes 00.05 6,3 V Œ> A LAJ o Kon tak t

RE53

Contextual Info: TH I S DRAW I NG IS UNPUBLI S H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATIO N FOR ALL PUBLICATION RIGHTS RE V I S I ONS RESERVED. LTR DESCRIPTION DATE PER 0G 3 B - 0 2 8 9 - 0 3 2 4 - JUN-03 CJ REVISED PER 0G3B- I 05 5- 04 05JAN05 CJ

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

Contextual Info: 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC 00 ES R 1G H T S R E S E RV E D. DIM D R E V 1S I O N S DIST P DESCRIPTION DATE DWN APVD REV PER E C R - 0 8 - 0 2 7 5 8 6

Contextual Info: 6 7 DRAWI NG MADE THIS IN DRAWI NG THIRD 15 ANGLE UNPUBLI 5HED COPYRIGHT 5 2 3 4 PROJ E CT I ON RELEASED 19 BY AMP FOR P U B L I C A T I O N INCORPORATED. ALL INTERNATIONAL RIGHTS D I ST LOC 19 CM RESERVED. R E V I5 I0N5 53 ZONE LTR D E 5 C R I F T I ON

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY" TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. R oH S 2002/95/EC. ELECTRICAL CHARACTERISTICS @ 25'C PINS 1.0 INDUCTANCE: P 6 -P 4

704-012.2

Contextual Info: 4 THIS D RA WI NG C IS 3 UNPUBLISHED. C O P Y R 1G H T 2 0 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS 2 20 LOC CM RESERVED. R E V 1 S 1O N S D 1S T 00 P LTR A B C C D E S C R 1P T I O N DATE DWN APVD R E V I S E D P E R 0G 3 B - 0 2 8 9 - 0 3

Amphenol 6026

Contextual Info: 31-6026 NOTES: R E V 1S I O N S DRAWING M A T E R I A L S OF C O N S T R U C T I O N : BODY, LOCK RING & C L A M P NUT - B R A S S A S T M - B 1 6 H02, C 3 6 0 0 0 , N I C K E L F E R R U L E = JIS H 3250, C 2700, S I L V E R P L A T E D ( . 0 0 0 2 0 0 MIN TH ICK)

Contextual Info: Alle Bechle inrbehallen/ i l l rights rts trn i 3 09185^07322 09185406322 09185405322 09185407324 09185406324 09185405324 Besle11-Nr. 3 2 0,76 Ajm Au 3 2 0,76 Ajm Au Anforderungsstufe P art-N o. perform ance Reference Niveau de qua 1i le le v e l All Oiiensinns in •

Q62702-A1188

Abstract: a1188
Contextual Info: BAT 60A Silicon Schottky Diode Preliminary data • Rectifier Schottky diode with extreme low VF drop for mobile communication • For power supply • For clamping and protection in low voltage applications • For detection and step-up-conversion ESD: ElectroStatic Discharge sensitive device, observe handling precautions!

IGB01N120H2

Abstract: IGD01N120H2 IGP01N120H2 Q67040-S4592 Q67040-S4593 PTO 252
Contextual Info: IGP01N120H2, IGD01N120H2 IGB01N120H2 HighSpeed 2-Technology • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter C G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior

218A4

Contextual Info: DRAWING THIS MADE DRAWING IN 15 4 THIRD ANGLE UNPUBLISHED COPYRIGHT 19 RELEASED BY AN P FOR 2 3 PROJECTION PUBLICATION INCORPORATED. ALL I NTERNATI ONAL RIGHTS DI ST LOC 19 DF RESERVED. R E V I 5 I ON! EO ZONE DESCRIRTION LT R REV PER 0 G 3 D - 0 3 6 2 - 0 1

Contextual Info: BBY66-05 3 Silicon Tuning Diode
High capacitance ratio
High Q hyperabrupt tuning diode 2
Designed for low tuning voltage operation for VCO's in mobile communications equipment 1
Very low capacitance spread Type BBY66-05 VPS05161 Marking Pin Configuration

MC9S12XHY256

Abstract: MC9S12XHY128 d768 transistor bosch can 2.0A S12XHY128 0M23Y MC9S12XHY256RMV1 IFR 740 transistor MOS generator cr 665 bosch ADC12B12CV1
Contextual Info: MC9S12XHY256 Reference Manual Covers MC9S12XHY Family Data Sheet: Advance Information This document contains information on a new product. Specifications and information here in are subject to change without notice. S12 Microcontrollers MC9S12XHY256RMV1 Rev. 1.01

Contextual Info: Alle Bechle mrbehallen/ i l l rights rts trn i 3 + + + + + + + + + ±1+ + + + + + + + + + 55,96 09185^07321 09185406321 09185405321 09185407323 09185406323 09185405323 Besle11-Nr. 3 2 0,76 /urn Au 3 2 0,76 Ajm Au Anforderungsstufe P art-N o. perform ance Reference

Contextual Info: Alle Bechle torbehallen/ i l l rights rts trn i 3 2, 54 x31 = 78,74. 89, -3-* 6 r ln LO * <>-<► f- 1. Kon tok t 1st contact 1er contact LD — 1. Kon tok t 1st co nta ct 1er contact P r i n t e d board layout Component side 2, 54 1,27 3,81 4,1 rv i V 0,64x0,64

Contextual Info: Alle Bechle torbehallen/ i l l rights rts trn i 3 2, 54 x31 - 7 8 , 7 / . P r i n t e d boord Ioyout Component side 2, 54 — 1. Kontokt 1st contact 1er contoct 1. Kon tok t 1st contact 1er contoct o i l holes 0,64x0,64 00. 05 m v w LO <0 CO +i 31x2, 54=178, 74)