JUPD42S16160 Search Results

IC-321B

Abstract: p421e P421E-400A
Contextual Info: DATA SHEET / MOS INTEGRATED CIRCUIT jUPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e ^ P D 4 2 S 1 6 1 6 0 L , 4216160L, 42S 18 1 6 0 L , 4 2 1 8 1 6 0 L are 1,048, 576 w ords by 16 bits C M O S dyna m ic RAMs.

42S18160

Abstract: NEC 4216160
Contextual Info: M O S INTEGRATED CIRCU IT juPD42S16160,4216160,42S18160,4218160 16 M BIT DYNAM IC RAM 1 M-WORD BY 16-BIT, FA ST PAGE M ODE, B YTE REA D /W RITE M ODE DESCRIPTION T h e /IPD 42S16160, 4216160, 42S1816 0, 4218160 are 1 048 576 w o rd s b y 16 bits d yn a m ic C M O S R A M s.

Contextual Info: DATA SHEET f MOS INTEGRATED CIRCUIT fiP D 4 2 S1 S1 6 0 ,4 21 6 16 0 ,4 2 S1 8 1 6 0 ,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The juPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynam ic CM OS RAMs.

Contextual Info: blE D bM2752S 0034G34 I TflM « N E C E NEC Electronics Inc. N E C E L E C T R O N I C S INC Description T he devices listed below are fast-page dynam ic RAMs organized as 1M words by 16 bits and designed to o p e ra te from a single pow er supply. O ptional features

NEC 4216160

Contextual Info: MOS INTEGRATED CIRCUIT f iPD42S16160,4216160,42S18160,4218160 16 M -BIT DYNAM IC RAM 1 M -W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The mPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs. These differ in refresh cycle and the /iPD42S16160, 42S18160 can execute CAS before RAS self refresh (see

Contextual Info: N EC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ HPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.

Contextual Info: bMS7SaS DOMSSSÜ 84T B N E C E MOS INTEGRATED C IR CU IT /¿PD42S16160,42S17160,42S18160 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M O DE - P R E L I M I N A R Y -DESCRIPTIO N The NEC ; ì PD42S16160, ¿¿PD42S17160 and /¿PD42S18160 are 1 048 576 words by 16 b it s dynamic

NEC 4216160

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ /¡¿ P D 42S 16160, 4216160, 42S 18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e /1 P D 4 2 S 1 6 1 6 0 ,4 21 6160, 4 2 S 1 8 1 6 0 ,4 2 1 8 1 6 0 a re 1,048, 576 w o rds by 16 b its C M O S d y n a m ic RA M s. T he

EZ 929

Abstract: S1616
Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ //¿PD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-W ORD B Y 16-BIT, FA ST P A G E M ODE, B Y T E READ/WRITE M O D E D escrip tion T h e ¿ iP D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L , 4 2 S 1 6 1 6 0 L , 4 2 1 8 1 6 0 L a re 1,048, 576 w ord s by 16 b its C M O S d y n a m ic R A M s .

3217b

Abstract: NEC 4216160 4216160 IC-3217B 4218160
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D escription The /iPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs.

TPS 436 IRA

Abstract: IC-3218B
Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT fiPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The iiPD42S16160Lr 4216160L, 42S18160L, 4218160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.

NEC 4216160

Contextual Info: M O S INTEGRATED CIRCUIT ju P D 4 2 S 16 1 6 0 ,4 2 1 6 1 6 0 ,4 2 S 1 8 1 6 0 ,4 2 18 16 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 w ords by 16 bits dynam ic CM O S RAMs.

Contextual Info: DATA SHEET MOS iv iv w iINTEGRATED m I •i n I u l / CIRCUIT v ii tv w I I r HPD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M -W 0R D BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The fiPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d ynam ic C M O S RAM s.

ic 321

Contextual Info: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ / „PD42S16160L, 4216160L, 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAM IC RAM 1M-W ORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.

Contextual Info: DATA SHEET MOS 11 INTEGRATED n I Li I i n I b. vCIRCUIT i i i v v i I iv iv w r iiPD42S16160L, 4216160L. 42S18160L, 4218160L 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M -W 0R D BY 16-BIT, FAST PAGE MODE, BYTE RE AD/W RITE MODE DESCRIPTION The /1PD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 words by 16 bits dynamic CMOS RAMs.

d4218160

Abstract: H1311 4218160LG 5-A70
Contextual Info: NEC MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ mPD42S16160L, 4216160L, 42S18160L, 421816QL 3.3 V OPERATION 16M-BIT DYNAMIC RAM 1M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The MPD42S16160L, 4216160L, 42S18160L, 4218160L are 1 048 576 w o rd s by 16 bits d yn a m ic CMOS RAMs.