JSS MARKING CODE Search Results

marking JSs

Abstract: Q62702-A376 Marking code jSs JSs diode
Contextual Info: Silicon Switching Diode Array BAW 100 For high-speed switching ● Electrically insulated diodes ● Type Marking Ordering Code tape and reel BAW 100 JSs Q62702-A376 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Symbol Values Unit Reverse voltage

Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

marking JSs

Abstract: bas21 DIODE BAS JS v BAS 20 SOT23 Q62702-A113 DIODE BAS JS JSs sot23 Q62702-A79 SOT JPs Q62702-A95
Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

BAS21

Abstract: BAS21-03W BAS21U BCW66H E6327 SC74 bas21 infineon DIN6784 BAS21 SOD323 JSs sot23
Contextual Info: BAS21. Silicon Switching Diode
For high-speed switching applications
High breakdown voltage BAS21 BAS21-03W BAS21U 6 3 4 5 D 1 1 1 D 2 D 3 2 1 2 2 3 Type Package Configuration Marking BAS21 BAS21U BAS21-03W SOT23 SC74 SOD323 single parallel triple single

a31s

Abstract: Silicon N Channel MOSFET Tetrode
Contextual Info: SIEMENS BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code Package II 5 CO h 1= D CO Q62702-F1772 CM BF 2000W NDs

Siemens S-89

Abstract: Siemens S 89
Contextual Info: SIEMENS BSP 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type b 0.36 A BSP 89 VDS 240 V Type BSP 89 Ordering Code Q67000-S652 flDS(on) Package Marking 6Q SOT-223 BSP 89 Tape and Reel Information

SS89 transistor

Abstract: BSS89 s 89
Contextual Info: SIEMENS BSS 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type b 0.3 A B S S 89 240 V Type B S S 89 B S S 89 B SS 89 Ordering Code Q62702-S519 Q62702-S619 Q62702-S385 ffDS(on) 6Q Package Marking

Contextual Info: SIEMENS BSP 298 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • ^GS th = 2-1 - 4.0 V £ BSP 298 400 V Type BSP 298 Ordering Code Q67000-S200 CO Type b 0.5 A f lDS(on) 3Q Package Marking SOT-223 BSP 298 Tape and Reel Information

sot-23 Marking LG

Abstract: code 619 sot-23 CMPF4416A transistor marking code lg
Contextual Info: Central" CM PF4416A sem iconductor Corp. SILICON N-CHANNEL J F E T DESCRIPTION: The CENTRAL S E M IC O N D U C T O R C M P F 4 4 1 6 A type is an epoxy m olded NChannel Silicon Junction Field Effect Transistor m anufactured in an S O T -2 3 case, designed

a31s

Contextual Info: BF 1012 SIEMENS Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 12V • Integrated stabilized bias network AGC O - i X - HF o Input D rain G21 HF Output + DC G1 1 GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

hearing aids amplifiers

Contextual Info: SST200/200A Vishay Siliconix New Product N-Channel JFETs PRODUCT SUMMARY VGS off 0 0 V(BR}GSS -0 .3 to -0 .9 00 9 is M in (m S ) lo s s 0.25 -2 5 Min (mA) 0.15 FEATURES BENEFITS APPLICATIONS • Low Cutoff Voltage: <0 .9 V • • Mini-Microphones • High Input Im pedance

Siliconix TO-92S

Contextual Info: TN2410L, VN2406D/L, VN241 OL/LS Vishay Siliconix N-Channel 240-V D-S MOSFETs PRODUCT SUMMARY rDS(on) Max (Q) vGs(th)00 Id (A) TN2410L 1 0 V q s = 4 .5 V 0.5 to 1.8 0.18 VN2406D 6 @ V Gs = 1 0 V 0.8 to 2 1.12 6 ® VGS = 1 0 V 0.8 to 2 0.18 VN2410L 1 0 ® V qs = 1 0 V

Contextual Info: 2N7002K Vishay Siliconix New Product N-Channel 60-V D-S MOSFET TrenchFET MOSFET PRODUCT SUMMARY Vds(V) r DS<on) 60 (Q) Id ( m A ) 2 V gs = 10V ESD Protected 300 2000 V FEATURES BENEFITS APPLICATIONS • • • • • • • • • • • Direct Logic-Level Interface: TTL7CM0S

Contextual Info: Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C FEATURES • High transfer admittance • Low input capacitance • Low feedback capacitance • Low noise. APPLICATIONS • Preamplifiers for AM tuners in car radios.

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

08DS

Contextual Info: SÌ2308DS VlgHAY- s m i Y N-Channel 60-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „ s (V) 60 r d s (ON) (q ) l D (A) 0.16 @ VGS = 10 V ±2 .0 0.22 @ VGS = 4.5 V ±1 .7 TO-236 (SOT-23) Top View

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

Contextual Info: International Hü Rectifier P D - 9.1222 IRFI1310G H E XFE T Power M O S F E T Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS CD Sink to Lead Creepage Dist. = 4.8mm Repetitive Avalanche Rated 175°C Operating Temperature

F740LC

Abstract: 1RF740 IRF740LC IRF1010 Marking code jSs KAH marking ScansUX36 Ultra High Voltage Hexfets
Contextual Info: PD-9.1068 International 1QR Rectifier IRF740LC HEXFET Pow er M u s t - 1 i • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30V V gs Rating w n tiu u u t;u o jss, ^ dss ~ 400V '-'OSS, v-/rss • Extremely High Frequency Operation

Contextual Info: P D - 9 .1 5 0 3 B International IGR Rectifier IRFP150N PRELIMINARY HEXFET Power MOSFET • • • • • A dvanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully Avalanche Rated V d s s = "100V RüS on = 0.036Î2

L3103L

Abstract: 0T1S IRF4905L
Contextual Info: PD-9.1478A International 3BR Rectifier IRF4905S/L HEXFET Power MOSFET • • • • • • • A dvanced Process Technology S urface M ount IRF4905S Low -profile through-hole (IRF4905L) 175 °C O perating Tem perature Fast Switching P-Channel Fully Avalanche Rated

Contextual Info: P D - 9 .1 3 3 4 C International I R Rectifier IR L R /U 2 9 0 5 PRELIMINARY HEXFET Power MOSFET Logic-Level G ate Drive Ultra Low O n-Resistance S urface M ount IRLR2905 Straight Lead (IRLU2905) Advanced Process Technology Fast Switching Fully A valanche Rated

Contextual Info: PD -9.1498 International I O R Rectifier IRLIZ44N PRELIMINARY H EXFET Power M O S F E T • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated

Contextual Info: PD-9.1012 In tern atio n al io r R e c tifie r IRF830S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description