JSP MARKING Search Results

GW5820

Abstract: DW5560-0-JSP in4100-0-jsp gn433 GW5820-0-JSP
Contextual Info: Loose JSP Taped Fig.1 MKT Series Fig. 2 metallized POLYester FILM capacitor D.C. MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.:Automotive PRODUCT CODE: JSP

GW5820

Abstract: DW6390 GW5330-0-JSP GN5120 IN4470-0-JSP IR4820
Contextual Info: Loose JSP Taped Fig.1 MKT Series Fig. 2 mEtaLLizEd POLYEstEr FILM capacitor D.C. MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.:Automotive PRODUCT CODE: JSP

MKP 1.44/A

Abstract: MKP 1.44/A capacitor MN4680-A-JSP
Contextual Info: Loose JSP Taped Fig.1 MKP Series Fig. 2 mEtaLLizEd POLYPROPYLENE FILM capacitor D.C. AND PULSE APPLICATIONS Typical applications: Automotive and Industrial applications Capacitor for DC-DC converter, inverter and supply High Capacitance per volume PRODUCT CODE: JSP

GW5820

Abstract: MW5150 jsp marking DW6120-0-JSP MN4220 EN5120-0-JSP IN4100 MN4220-0-JSP ir5100 IR5180
Contextual Info: Loose JSP MKT Series Taped Fig. 2 Fig.1 METALLIZED POLYESTER FILM CAPACITOR D.C. MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.:Automotive PRODUCT CODE: JSP

GW5820

Abstract: ER5470 IR4330-0-JSP DW5560-0-JSP GW-58 MN4150-0-JSP DW6120-0-JSP IR4330
Contextual Info: Loose JSP Taped Fig.1 MKT Series Fig. 2 metallized POLYester FILM capacitor D.C. MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, by-passing, interference suppression in low voltage applications i.e.:Automotive PRODUCT CODE: JSP

IR512

Abstract: ir5100 IR433 20E-3 IR5100-A-JSP MKP 1.44/A capacitor
Contextual Info: Loose JSP Taped Fig.1 MKP Series Fig. 2 metallized POLYPROPYLENE FILM capacitor D.C. AND PULSE APPLICATIONS Typical applications: Automotive and Industrial applications Capacitor for DC-DC converter, inverter and supply High Capacitance per volume PRODUCT CODE: JSP

IN4100

Abstract: capacitor polyester pme IR510 IR433 IR4270-0-JSP in4150 ir5100 IR4220 IR4470-0-JSP IR4390
Contextual Info: T ER D N U Loose EN M P O VEL JSP DE MKT Series METALLIZED POLYESTER FILM CAPACITOR D.C. MULTIPURPOSE APPLICATIONS Typical applications: blocking, coupling, decoupling, bypassing, interference suppression in low voltage applications i. e. Automotive Fig. 1

IR510

Abstract: mn4560 IR4330-A-JSP PME 400 IR4390-A-JSP MR4270-A-JSP PR4220-A-JSP IN456 PN4100-A-JSP MR5120-A-JSP
Contextual Info: T ER UND Loose EN M P O VEL JSP DE MKP Series METALLIZED POLYPROPYLENE FILM CAPACITOR D.C. AND PULSE APPLICATIONS Typical applications: blocking, coupling, decoupling, bypassing, interference suppression in low voltage applications i. e. Automotive Fig. 1

smd diode a7

Abstract: smd jsp SMD a7 S BAV99 SOT 23 smd diode marking A7 SOT-23 JSP SMD JSp SOT23 bav99 sot-23 smd transistor A7 Diode BAV99 SOT23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED SWITCHING DIODES 3 BAV99 SOT-23 Formed SMD Package Pin Configuration 1 = ANODE 2 = CATHODE 3 = ANODE/ 2 1 CATHODE Marking BAV99 = A7 High-Speed Switching Series Diode Pair

Contextual Info: Philips Semiconductors Productspecification BAS19; BAS20; BAS21 General purpose diodes FEATURES • Small plastic SMD package • Switching speed: max. 50 ns MARKING PINNING MARKING CODE TYPE NUMBER PIN 1 DESCRIPTION anode • General application BAS19 JPp

smd diode a7

Abstract: jsp sot-23 marking
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR HIGH SPEED SWITCHING DIODES 3 BAV99 SOT-23 Formed SMD Package Pin Configurat ion 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE 2 1 Marking BAV99 = A7 High-Speed Switching Series Diode Pair

Contextual Info: 2N2944AUB – 2N2946AUB PNP Silicon Small Signal Transistor Available on commercial versions Qualified per MIL-PRF-19500/382 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This 2N2944AUB through 2N2946AUB PNP silicon transistor device is military qualified up to

smd jsp

Abstract: jpP marking code jsp marking BAS19 BAS20 BAS21 BAS21 on JPp smd marking code SOT23
Contextual Info: Philips Semiconductors Product specification General purpose diodes FEATURES • Small plastic SMD package • Switching speed: max. 50 ns BAS19; BAS20; BAS21 MARKING PINNING MARKING CODE TYPE NUMBER PIN DESCRIPTION 1 anode • General application BAS19 JPp

introduction to power semiconductors

Abstract: MCR08BT1 APPCHP1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MCR08BT1 Thyristor logic level Product specification July 2001 Philips Semiconductors Product specification Thyristor logic level MCR08BT1 GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated, sensitive gate thyristor in a plastic

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

Zener diode smd marking sot223

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy

PMEG2010AEJ

Contextual Info: PMEG2010AEJ 20 V, 1 A very low VF MEGA Schottky barrier rectifier in SOD323F package Rev. 02 — 14 October 2005 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an

MSA435

Abstract: PMLL4148 PMLL4148L PMLL4448 MSA461
Contextual Info: PMLL4148L; PMLL4448 High-speed switching diodes Rev. 06 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages.

MSA435

Abstract: BAS32L
Contextual Info: BAS32L High-speed switching diode Rev. 04 — 22 March 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C SMD package.

Contextual Info: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary RDS ON ID TA = +25°C • Low On-Resistance  Low Input Capacitance 1.8 @ VGS = 10V 500mA  Fast Switching Speed 2.0 @ VGS = 4.5V 450mA  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

BAS21H

Abstract: MARKING JSp
Contextual Info: BAS21H Single high-voltage switching diode Rev. 02 — 3 November Product data sheet 1. Product profile 1.1 General description Single high-voltage switching diode, encapsulated in a SOD123F small and flat lead Surface-Mounted Device SMD plastic package.

TRANSISTOR SMD MARKING CODE pa

Abstract: Zener diode smd marking sot223 smd TRANSISTOR code marking bu
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has

Contextual Info: Product specification PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.