"CHAPTER 1 Introduction to Power Semiconductors"
Abstract: CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt
Contextual Info: BJT Primary Switch Ratings In RDFC Applications Application Note AN-2337 When the transistor is off and a high collector voltage is applied, the electric field between base and collector causes depletion of this N- region and turns it into an insulator. The voltage
|
Original
|
an-2337ds-1423an-2497an-2337-0904+1007-apr-2009chapter 1 introduction to power semiconductorsappchp1common emitter bjt application and circuitpower semiconductor applications" philipsbjt with v-i characteristicsbjt characteristicscommon emitter bjtbipolar junction transistorlow capacitance bjt
|
PDF
|
introduction to power semiconductors
Abstract: MCR08BT1 APPCHP1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MCR08BT1 Thyristor logic level Product specification July 2001 Philips Semiconductors Product specification Thyristor logic level MCR08BT1 GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated, sensitive gate thyristor in a plastic
|
Original
|
mcr08bt101-oct-97introduction to power semiconductorsappchp1 |
PDF
|
APPCHP1
Abstract: APPCHP6 APPCHP2 MAC-223 MAC223A8 MAC223A6
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MAC223 series Triacs Product specification July 2001 Philips Semiconductors Product specification Triacs MAC223 series GENERAL DESCRIPTION Passivated triacs in a plastic envelope, intended for use in applications requiring
|
Original
|
mac223o220ab01-oct-97appchp1+5appchp6appchp2mac-223mac223a8mac223a6
|
PDF
|
APPCHP1
Abstract: bt258 SC-46 BT258-800R APPCHP2 semiconductors CROSS-REFERENCE sensitive gate thyristors
Contextual Info: Philips Semiconductors Product specification Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced
|
Original
|
bt258bt258repetitiveo220ab01-oct-97+6appchp1sc-46bt258-800rappchp2semiconductors cross-referencesensitive gate thyristors
|
PDF
|
