DS31898 Search Results

BSN20 MARKING

Abstract: BSN20 equivalent bsn20
Contextual Info: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

BSN20 equivalent

Contextual Info: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: BSN20 Green N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = +25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • • Description Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary RDS ON ID TA = +25°C • Low On-Resistance  Low Input Capacitance 1.8 @ VGS = 10V 500mA  Fast Switching Speed 2.0 @ VGS = 4.5V 450mA  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

BSN20 MARKING

Abstract: BSN20 equivalent BSN20 sot23 marking jsp BSN20-7
Contextual Info: BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 1.8Ω @ VGS = 10V 500mA 2.0Ω @ VGS = 4.5V 450mA V(BR)DSS • • • • • • • Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching