JSO LC SERIE Search Results

Contextual Info: MEMS – Oscillator JSO LC series Low Power H CMOS Output This document contains useful information how to handle Jauch JSO LC MEMS oscillators ESD handling Jauch JSO LC oscillators are semiconductor devices, that should be protected against electrostatic discharge during transportation, storage, manufacturing process and assembled

Contextual Info: MEMS – Oscillator JSO LC series Low Power H CMOS Output Edge Control The new Jauch JSO LC oscillator series offers a unique feature – Edge Control ! Edge Control is an advanced feature to control the EMI dissipation, or drive high capacitive loads by selecting the edge slew rate of the oscillators output signal depending on the

JSO LC Serie

Contextual Info: MEMS-Oscillator • JSO LC series · 2.5 V actual sizes 2016 2520 3225 5032 7050 n low power oscillator with HCMOS/LVCMOS output n compatible to industry standard packages 2016 – 7050 General Data n configured to customer’s specification n extended shock & vibration resistance

JSO LC Serie

Contextual Info: MEMS-Oscillator • JSO LC series · 2.8 V actual sizes 2016 2520 3225 5032 7050 n low power oscillator with HCMOS/LVCMOS output n compatible to industry standard packages 2016 – 7050 General Data n configured to customer’s specification n extended shock & vibration resistance

JSO LC Serie

Contextual Info: MEMS-Oscillator • JSO LC series · 3.3 V actual sizes 2016 2520 3225 5032 7050 n low power oscillator with HCMOS/LVCMOS output n compatible to industry standard packages 2016 – 7050 General Data n configured to customer’s specification n extended shock & vibration resistance

JSO LC Serie

Contextual Info: MEMS-Oscillator • JSO LC series · 2.5 V ~ 3.3 V actual sizes 2016 2520 3225 5032 7050 n low power oscillator with HCMOS/LVCMOS output n compatible to industry standard packages 2016 – 7050 General Data n configured to customer’s specification

JSO LC Serie

Contextual Info: MEMS-Oscillator • JSO LC series · 3.0 V actual sizes 2016 2520 3225 5032 7050 n low power oscillator with HCMOS/LVCMOS output n compatible to industry standard packages 2016 – 7050 General Data n configured to customer’s specification n extended shock & vibration resistance

JSO LC Serie

Contextual Info: MEMS-Oscillator • JSO LC series · 1.8 V actual sizes 2016 2520 3225 5032 7050 n low power oscillator with HCMOS/LVCMOS output n compatible to industry standard packages 2016 – 7050 General Data n configured to customer’s specification n extended shock & vibration resistance

Contextual Info: THE SPECIALISTS FOR FREQUENCY CONTROL AND BATTERY TECHNOLOGY MEMS TIMING MEMS OSCILLATORS NEW AT JAUCH: MEMS OSCILLATORS EASY TO CONFIGURE: CHECK OUT OUR WEBSITE PRODUCT FEATURES n Silicon MEMS resonator based oscillators n Frequency n Best range 1 MHz ~ 137 MHz

H24A1

Abstract: H24A2 ST2006 ST4004 J279 ST2038
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS 0PTOELECTBOHICS H24A1 H24A2 PACKAGE DIMENSIONS DESCRIPTION The H24A series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a iow-cost plastic package with

Contextual Info: m NEREX CM50BU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Four IGBTMOD U-Series Module 50 Amperes/1200 Volts D escription: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists

Contextual Info: Jauch Lead Free and RoHS matrix type Product series S HC49/U / SSx Quartz Crystal RoHS compliant RoHS exemption China RoHS compliant reflow soldering peak temperature wave soldering peak temperature Pb Cd Hg Cr6 PBB & PBDE Sn, Cu yes - yes - 260°C no no

2N2369A

Abstract: 2n4449
Contextual Info: SEMICONUUU I UK TECHNICAL DATA 2N2369AJAN, JTX, JTXV, JANS 2N3227JAN, JTX, JTXV 2N4449JAN, JTX, JTXV Processed per MIL-S-19500/317 NPN Silicon Small-Signal Transistors designed for general-purpose switching applications M A X IM U M R A T IN G S Rating Symbol

2N4041

Abstract: 2N4429 BFS98 2N3632 2N4127 CV7644 J 2N2222A CV7371 CV7373 ZT80
Contextual Info: ZT80-ZT180 Series—Truly general purpose complementary n-p-n and D-n-p transistors featuring nigh performance, high reliability and low cost 10mA 100mA T h e diagram show s th e w id e range o f applications for w h ic h th e T O -1 8 encapsulated Z T 8 0 S e rie s -Z T 1 8 0 Series

Contextual Info: i q ä l j ! i Discrete POW ER & Signal Technologies a ^ i Bi'MICDNPÜCTPR BCV27 M a rk : F F NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05.

Contextual Info: f Z 7 SGS-THOMSON SD1433 ^7#. K M « « ® « ! RF & MICROWAVE TRANSISTO RS UHF MOBILE APPLICATIONS • . ■ . ■ . 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER p OUT = 10 W MIN. WITH 8.0 dB GAIN dr l|—^ R> .280 4L STUD M122 epoxy sealed

Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE57500 NE57510 FEATURES DESCRIPTION • HIGH O SCILLATO R O UTPUT PO W ER : T h e N E 5 7 5 series of N P N silicon medium pow er transistors is designed to operate in amplifiers and oscillators up to 2 G H z with supply voltages up to 18 volts. Transistors in this series

2n3866 sos

Abstract: 2n4041 2N4127 BFS98 2n3733 BFS96 BFS97 BSV33 ZT180 ZT181
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 25°C amb. mW VCE(sat) max. volts volts volts volts BFS96 BFS97 B FS98 -6 0 -6 0 -8 0 -3 0 -4 0 -6 0 -5 -5 -5 500 500 500

2SC2570

Abstract: 2sc2570 transistor NE02132
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,

IRF 1630

Abstract: LT1080 CP
Contextual Info: / u r m TECHNOLOGY \<Æ LT1039/LT1039-16 \J RS232 Driver/Receiver with Shutdown F € flT U ft€ S D C S C R IP T IO n • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1039 is atriple RS232 driver/receiver which includes SHUTDOWN. Each receiver w ill accept up to ±30V input

MJ 15007 transistor

Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz

magnetic sensor an-201

Abstract: hctc
Contextual Info: iC-NMK if f if ll SERIAL SWITCHED MR SENSOR FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Magneto resistors in bridge configuration Analog switches at the sensor outputs Sensor activation by serial input data Internal shift register for chain connection

2SC3544

Abstract: IC sn 74 ls 2000
Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry

smd code book 13t

Abstract: transistor SMD 13t 13t smd transistor SIPMOS application note SMD marking DHS 2128x
Contextual Info: • fl El 3 5 1. GS G 1 0 3 4 1 0 bS7 . SIE M E N S T rilith lC BTS 775 P re lim in a ry D ata Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications