JRS 2 Search Results
JRS 2 Datasheets (14)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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JRS200100 | Amphenol PCD | Relays - Relay Sockets - QUICK MOUNT 2 POLE | Original | 65.67KB | |||
JRS200101 | Amphenol PCD | Relays - Relay Sockets - QUICK MOUNT 2 POLE WC | Original | 65.67KB | |||
JRS200110 | Amphenol PCD | Relays - Relay Sockets - QUICK MOUNT 2 POLE | Original | 65.67KB | |||
JRS200111 | Amphenol PCD | Relays - Relay Sockets - QUICK MOUNT 2 POLE WC | Original | 65.67KB | |||
JRS200200 | Amphenol PCD | Relays - Relay Sockets - QUICK MOUNT 2 POLE | Original | 65.67KB | |||
JRS200201 | Amphenol PCD | Relays - Relay Sockets - QUICK MOUNT 2 POLE WC | Original | 65.67KB | |||
JRS200210 | Amphenol PCD | Relays - Relay Sockets - QUICK MOUNT 2 POLE | Original | 65.67KB | |||
JRS200211 | Amphenol PCD | Relays - Relay Sockets - QUICK MOUNT 2 POLE WC | Original | 65.67KB | |||
JRS200300 | Amphenol PCD | Relays - Relay Sockets - QUICK MOUNT 2 POLE | Original | 65.67KB | |||
JRS200301 | Amphenol PCD | Relays - Relay Sockets - QUICK MOUNT 2 POLE WC | Original | 65.67KB | |||
JRS200310 | Amphenol PCD | Relays - Relay Sockets - QUICK MOUNT 2 POLE | Original | 65.67KB | |||
JRS200311 | Amphenol PCD | Relays - Relay Sockets - QUICK MOUNT 2 POLE WC | Original | 65.67KB | |||
JRS200350 | Amphenol PCD | Relays - Relay Sockets - QUICK MOUNT 2 POLE ITAR | Original | 65.67KB | |||
RS2J/RS2JB | Microdiode Semiconductor | Surface mount, 50-1000V reverse, 2.0A forward, 50A surge, -55 to +150°C operating. | Original |
JRS 2 Price and Stock
Vishay Dale M55342K03B270JRS2THICK FILM RESISTOR 1005 5% |
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M55342K03B270JRS2 | Digi-Reel | 1,000 | 1 |
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Amphenol PCD JRS200100QUICK MOUNT 2 POLE |
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JRS200100 | Box | 47 | 1 |
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JRS200100 |
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JRS200100 |
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JRS200100 | 1 | 1 |
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Amphenol PCD JRS200300QUICK MOUNT 2 POLE |
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JRS200300 | Box | 25 | 1 |
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JRS200300 | Bulk | 25 |
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JRS200300 |
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JRS200300 |
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JRS200300 | 29 |
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Crouzet LJRS2110ARELAY IMPULSE DPDT 10A 110V |
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LJRS2110A | Bulk | 1 | 1 |
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LJRS2110A | Bulk | 2 | 1 |
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LJRS2110A | Bulk | 5 Weeks | 1 |
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LJRS2110A | 2 | 1 |
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LJRS2110A | 2 | 1 |
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LJRS2110A |
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LJRS2110A | 4 |
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Amphenol PCD JRS200310QUICK MOUNT 2 POLE |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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JRS200310 | Box | 25 |
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JRS200310 | Bulk | 25 |
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JRS200310 |
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JRS200310 |
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JRS 2 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SAE-AMS-2422
Abstract: ms27743 ASTM-D-5205 MIL-PRF-12883 M6106 JRS200300 ASTM-D5205 JRS500100 SAE-AMS2422 M83536
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MIL-PRF-12883, JRE400100 JRE400101 JRE400110 JRE400111 SAE-AMS-2422 ms27743 ASTM-D-5205 MIL-PRF-12883 M6106 JRS200300 ASTM-D5205 JRS500100 SAE-AMS2422 M83536 | |
Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol |
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Q62702-A95 Q62702-A113 Q62702-A79 OT-23 | |
condensateursContextual Info: CONDENSATEURS HAUTE STABILITE GENERALITES GENERAL INFORMATION HIGH STABILITY CAPACITORS seifdio" fiii?; Les co n d e '-sa te jrs haute stabilité sont réaüsés à partir de aiéiectncues High-staoility capacitors are made of metallized plastic composite or |
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elma
Abstract: 7 segment display 510 1016F dissipator alra
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16--f elma 7 segment display 510 1016F dissipator alra | |
BAS 20 SOT23
Abstract: DIODE BAS 21 sot-23 JSs
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VPS05161 EHA07002 OT-23 EHB00032 Oct-07-1999 BAS 20 SOT23 DIODE BAS 21 sot-23 JSs | |
ZD 410 MFContextual Info: f* ALUMINUM ELECTROLYTIC CAPACITORS n ic h x c o n Chip Type, Higher Capacitance Range U J F jrS M D Long Lile Anti-Solvent Feature Through ’OOVonly • Chip Type, higher capacitance in larger case sizes <j> 12.5, ^ 1 6 , ^ 1 8 , ^ 20) • Designed for surface mounting on high density PC board. |
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120Hz, 16X16 18X16 18X21 20X21 16X21 ZD 410 MF | |
Contextual Info: TP801 C 0 4 5 a S C H O T T K Y BARRIER DIODE : Features Low VF Super high speed switching. IM & tt Connection Diagram • y u —t -ttfG lc jrS fc if M tt High reliability by planer design. • flliÉ .: Applications High speed power switching. M axim um Ratings and Characteristics |
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TP801 500ns, TP801C04 | |
Contextual Info: K /D iod es RB100A R B 100A > ' v 3 "J h :E — V7 # < t- K - f ’7 ° Silicon Epitaxial General Use Rectifying Schottky Barrier Diode (Mold Type) RBIOOAfi, IIIT jrS lffifc itf/h iS < , i^[5] tSBSfa) T rr SI 5: S 'S 1>C t£ t A '6 , • £i-ff£\|';£|I|/Dimensions (U n it: mm) |
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RB100A RB100A B100A | |
Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 MHz/ 1 V L 0.47 µH ±20% Rated current ∆T = 40 K IR 2.60 A max. Saturation current |ΔL/L| < 30% 5.20 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 15 µH ±20% Rated current ∆T = 40 K IR 2.60 A max. Saturation current |ΔL/L| < 30% 3.20 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 2.2 µH ±30% Rated current ∆T = 40 K IR 3.80 A max. Saturation current |ΔL/L| < 30% 5.30 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 22 µH ±20% Rated current ∆T = 40 K IR 1.40 A max. Saturation current |ΔL/L| < 30% 1.60 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 22 µH ±20% Rated current ∆T = 40 K IR 1.80 A max. Saturation current |ΔL/L| < 30% 2.20 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 8.2 µH ±20% Rated current ∆T = 40 K IR 2.25 A max. Saturation current |ΔL/L| < 30% 2.50 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 22 µH ±20% Rated current ∆T = 40 K IR 0.70 A max. Saturation current |ΔL/L| < 30% 1.10 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 1 MHz/ 1 V L 2.2 µH ±20% Rated current ∆T = 40 K IR 1.80 A max. Saturation current |ΔL/L| < 30% 1.95 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 2.2 µH ±30% Rated current ∆T = 40 K IR 5.15 A max. Saturation current |ΔL/L| < 30% 7.80 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 2.2 µH ±20% Rated current ∆T = 40 K IR 2.20 A max. Saturation current |ΔL/L| < 30% 3.40 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 8.2 µH ±20% Rated current ∆T = 40 K IR 2.60 A max. Saturation current |ΔL/L| < 30% 4.30 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 18 µH ±20% Rated current ∆T = 40 K IR 1.85 A max. Saturation current |ΔL/L| < 30% 2.40 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 22 µH ±20% Rated current ∆T = 40 K IR 2.10 A max. Saturation current |ΔL/L| < 30% 2.60 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 33 µH ±20% Rated current ∆T = 40 K IR 1.80 A max. Saturation current |ΔL/L| < 30% 2.20 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 10 µH ±20% Rated current ∆T = 40 K IR 2.10 A max. Saturation current |ΔL/L| < 30% 2.50 A typ. DC Resistance |
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Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Inductance 100 kHz/ 1 V L 1.0 µH ±20% Rated current ∆T = 40 K IR 2.20 A max. Saturation current |ΔL/L| < 30% 3.00 A typ. DC Resistance |
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