JM 5600 Search Results

TRANSISTOR SD1444

Abstract: AJ10 SD1444
Contextual Info: H/IS c a n n i-*.*,inr»S IV U C rO S e m l P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive •■ IVS I I LVj VJ ■ ■ IV* I J V I I IV> ; IPA n I V ■«/ Montgomeryville, 18936-1013 Tel: 215 631-9840 ^ _ . jm jm jm o U l 4 4 4 RF & MICROWAVE TRANSISTORS

S7508

Abstract: 17S274K MS75088-13
Contextual Info: GOWAIMDA R.F. SHIELDED CHOKES • Style. ’ T 10, Grade 1. Class A ■ Maxim jm O perating Tem perature: -55 t o +105 C * Mnxim jm T em perature Rise: 15°C a Am bie it T em perature: 90 C *1 D ielectric W ith sta n d in g V o lta g e i sea level : 1000 VRMS

m 60 n 03 c10

Contextual Info: LSQ LARGE CAN TYPE ALUMINUM ELECTROLYTIC CAPACITORS * v $ S i ^ f t 8 5 0C i £ i i E i S 85°C Standard, Screw Terminal Type m FEATURES • 85°C3000B#rs1nPo Load Life : 85"C 3000 hours. SPECIFICATIONS f JM S i S 14 Items fi 6 I -40— b85°C -25— F85°C

52N30

Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50
Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70

Contextual Info: A S E A 03 BROüJN/ABB SEMICON IR Rückwärtsleitende Thyristoren Thyristor V drm V A A/°C A ft 10 ms 8,3 ms 10 ms Tv j =45°C tv jm A A A2s A2s 500 600 700 300 190 110 330 215 120 2850 2 700 CSR 146-05 i- Thyr. CSR 146-06 iCSR 146-07 i- Diode 500 600 700

N76000

Abstract: 0.5-um CMOS standard cell library
Contextual Info: ASICs • CMOS Standard Cells •S ta n d a rd Specifications M N 73000 M N 76000 M N 7A 000 M N 7B 000 50,000 g a te s 70,000 g a te s 200,000 g a te s 400,000 g a te s Silicon g a te C M O S 1.5/rni S ilicon g a te C M O S 1.2/m i Silicon g a te C M O S 0.8/jm

Contextual Info: MULTILAYER CHIP CERAMIC CAPACITOR m m m rn Q M K • * rnmm, S Q t i, f lW * * « 1 M H Z - 3 G H Z iB I. * g j i ^ & m j w s * ru tto * « Ä Ö U ^ iitt in if^ t t, jM ^ ü lS t W n a W f f . * A ffi * K E S R , * m & m m u a tñ iim 0805 1 ® CQ ~r

Contextual Info: Hardware Tuning Tools SLOT TUNING TOOLS J M C P/N M O U N T IN G T H R E A D U N S -2 JOHAN SON 8777 / < JM C P/N 8777 = JOHANSON B 7 I2 r ] A P P L IC A T IO N r2 7 2 7 0 T .0 7 8 J 272 30 J-GIGA-TRIM S E R IE S D I A .I 272 3 0 j 1 5 801 M IN IA TU RE A IR S E R IE S

sd 7406

Abstract: CI 7407 MOLEX 3953 I-7107 39-53-4106 39512100 ck 66 ul94v-0 t 3301 nk CI008 26ag
Contextual Info: 10 D 6 .0 6 1.2 7 ±0- □- K :* CODE:* (P IT C H ) LEAD FREE LEAD FREE LEAD FREE A - 9 & W t t x 7 - G2 t OANG E iê GOLD 0 .7 6 M m GREEN ifz GOLD 0 .2 5 p m St iê YELLO W GOLD G3 ( 1.2 7 ) m ’ CC-y?) G54 P 0 S I7 I0 N OF P A R 7 NO. P 0 S I7 I0 N OF 7 R A D E M ARK AND

PS 9829 m

Abstract: Q559 int 6400 PS 9829 B
Contextual Info: GO UL D S E M I C O N D U C T O R 4055916 GÖULD SEMICONDUCTOR D I V % pe. |. n »IV QBE D | MDSS^lt, D G l G a a D 0 J ~ 03E 10220 D Intelligent Slave Physical Interface Controller IPI-3 Electronics 7 ^ 5 5 '3 3 - /S' P r e lim in a r y D a ta S h e e t

ZLDQ250A

Abstract: pwm INVERTER welder ZQ25A zldq150a ZQ50A st600c ZQ35A diode m3 3phase bridge diode mds 60 SKE200A
Contextual Info: ZHEJIANG ZENLI RECTIFIER MANUFACTURE CO. , LTD Z L ZENLI RECTIFIER RECTIFIER Power Semiconductors >> Short Form Catalog Zenli Rectifier Manufacture CO.,LTD Head company: Zenli Industry Zone,75# Hengjingdongyi.RD, Fangdouyan,Liushi,Yueqing,Zhejiang,China TEL:86-577-62766513

stk 412 -410 power amp

Abstract: Truth Table 7485 2 bit comparator STK power amplifier 4301 STK 463 amplifier stk 5006 stk 411 5.1 Amp Block Diagram STK 435 power amplifier stk 496 630 stk 410 22 pin STK 4301
Contextual Info: Æk A Vm J a Order Number IPC-16A/927 Publication Number 4200127X Preliminary NATIONAL The PACE Microprocessor A Logic Designer’s Guide to Program Equivalents of TTL Functions MARCH 1976 National Semiconductor Corporation 2900 Semiconductor Drive Santa Clara, California 95051

TCL103K

Abstract: YST 501 CCD391 arco ceramic disc capacitors JS84 TCA223Z TCA104Z S3113 tcl tv ic
Contextual Info: Ceramic Disc Capacitors - CCD/TCA/TCD/TCL/TCP/TCO/TCV GENERAL SPECIFICATIONS Arco Ceramic Disc Capacitors are designed for applications requiring high capacitance and low power factors from 12 to 1000 volts. All units are coated with a rugged “Durez” coating and are available in a variety of

U860 diode

Abstract: diode U860 diode avalanche DSA U860 tc 40138 DIODE DSA 18 diode avalanche DSA VRRM 2300 DSA VRRM 2300 G DSA 908-44 A G diode avalanche DSA 603
Contextual Info: A S E A b Ro u n /abb AB seuicon D I 00MÛ3DÛ □OGOlhl 7 * T -o \- Netzdioden Vrrm 1 Diode I 1 DS Ki DSA 1 1 T yp /type 1 I I Rectifier diodes S21 - I I 1 I FAV1 400-11 KC, NC 400-14 KC, NC 400-17 KC, NC 400-20 KC, NC 400-23 KC.NC ft If s m If a v m A °C A

d 151811

Abstract: 40669 DSD 1028-25 A diode avalanche DSA dsa 1508 diode avalanche DSA VRRM 2300 abb diode YSD CH-4UH dsa 1208 DSA 135
Contextual Info: S E MI COND UC TORS AG rrm Ifavm O o &> V f Type O rdering num ber Bestellnum m er Num. de com m ande □ ODl hfi Bfi OOOQOaq □ B A B B DSA Avalanche-Dioden 1 DSA Avalanche Diodes 3flE D o A B B Tc A V DSA l 403-38.50 GG, L1G 3800.5000 1040 Tf 5M V = 100°C 8,3 m s 10 m s

amd 216-0674026

Abstract: 216-0674026 amd 218s7ebla12fg KB926 SB710 KAV10 ALC269X APL5607 FBMA-L11-201209-221LMA30T ISL6251
Contextual Info: A B C D E 1 1 Compal Confidential 2 2 NAL00 Schematics Document AMD L310/L110 Processor with RS780MN/SB710/M92-S2/S3 LP 2009-04-24 3 3 REV:0.2 4 4 2008/10/06 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2009/10/06 Deciphered Date

AR2414

Abstract: AR2413
Contextual Info: IN TE G R A TE D CIRCUITS EMTA S&flEET TE A1205AT High efficiency DC/DC converter P relim inary specification File under Integrated C ircuits, IC03 Philips Semiconductors 1998 M ar 24 PHILIPS PHILIPS Philips S e m ico nd uctors Prelim inary specification High efficiency D C /D C c o n v e rte r

PDI-68RV

Abstract: t127a
Contextual Info: P/N PDI-26RV PDI-50RV PDI-68RV A 19.06 34.30 45.73 B 31.26 46.50 57.93 D 24.86 40.10 51.53 C 37.51 52.75 64.18 E 15.24 30.48 41.91 iì F 27.56 42.80 54.23 G 33.68 48.92 60.35 MATERIAL AND FINISH: Insulator: PBT, glass filled, UL 94V-0 rated, color black Contact: Phosphor bronze, Gold flash on mating area, 100|jin Tin on solder

MRF 5600

Abstract: RFMT-56 jm 5600
Contextual Info: ✓mRF Prime FT W Microwave <rf A N SCC HTTP://www.rfprime.com BLUE CELL MIXER COMPANY D a ta S h e e t Surface Mount Mixer 4400-6000 MHz RFM T-56 The RFMT-56 is a low level high frequency mixer, implemented using the patented BLUE CELL process. These devices are broad band and have low conversion loss performance. The low

Johanson 5502

Abstract: mechanical project Johanson 5200
Contextual Info: 1 to 14 pF 1 to 20 pF 5402 5502 G6'&&C>p 4 &&& G6'&&C>p 4'+&& air capacitors 1 to 30 pF 8053 š 9WfWY_jWdY[HWd][0'$&je'&$&f<4 &jkhdi š Meha_d]LebjW][0(+&L:9+&&L:9J[ij š Jehgk[0'je+$&ep$?d$ š Jkd_d]Jeeb0.-,* š He>I9ecfb_Wdj

2SC4532

Contextual Info: 2SC4532 SILICON NPN TRIPLE DIFFUSED MESA TYPE TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. 20.5 MAX HIGH SPEED SWITCHING APPLICATIONS. . High Voltage J# 3.3 ±0.2 : VcBO — 1700V . Fast Switching Speed. Resistive Load tf=0. l(Js(Typ.)

Contextual Info: BX DIELECTRIC BX dielectric characteristics are identical to X7R dielectric, except for the added restriction that the TemperatureVoltage Coefficient TVC is not to exceed -25% AC at rated voltage, over the operating temperature range (-55°C to 125°C). NOVACAP manufactures chips using dielectrics with minimal voltage coefficient and layer

la 78042

Abstract: uPI Semiconductor Corp western 142c 4SH 0202 K 176 LE, K 561 LN UCS-51 a295 ac hen nsd
Contextual Info: in te r APPLICATION BRIEF AB-41 Septem ber 1988 lntel C o rp o ra tio n m akes no w a rranty for the use o f its p ro d u c ts and assurnes no responsibility fo r any erro rs w hich m ay app ear in th is d o c u m e n t nor d o e s it m a k e a c o m m itm e n t to u p d a te the in fo rm a tio n c o n ta in e d herein

MOSFET D25

Contextual Info: VMM 15-045 VMM 15-05 Dual Power MOSFET Modules DSS D25 R DS on = 450/500 V = 20 A = 0.2 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T d = 25°C to 150°C VMM 15-045 VMM 15-05 450 500 V V v DGR T,J = 25°C to 150°C; FL. = 2 0 k i2 Cab VMM 15-045