JFET RF CIRCUIT Search Results

Contextual Info: Ordering number : EN2841B 2SK932 N-Channel JFET http://onsemi.com 15V, 7.3 to 24mA, 50mS, CP Applications • AM tuner RF amplifier, low-noise amplifier Features • • • • • Adoption of FBET process Large | yfs | Small Ciss Ultralow noise figure Ultrasmall-sized package permitting 2SK932-applied sets to be made smaller and slimmer

Contextual Info: 0.6 µm BiCMOS Process Family XB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular BiCMOS Technology Description The XB06 Series is X-FAB‘s 0.6 Micron BiCMOS Technology. Main target applications are RF circuits and high precision analog applications mixed with

LF351

Abstract: LF411C LF441C LM11C LM11CL LM201A LM301A LM308A MC1436 quad comparator LM3900
Contextual Info: Amplifiers and Comparators In Brief . . . For over two decades, Motorola has continually refined and updated integrated circuit technologies, analog circuit design techniques and processes in response to the needs of the marketplace. The enhanced performance of newer

mct1458

Abstract: MC1436 lm358 crossover MC14577C LF351 LF411C LF441C tl062 LM11CL LM201A
Contextual Info: Amplifiers and Comparators In Brief . . . For over two decades, Motorola has continually refined and updated integrated circuit technologies, analog circuit design techniques and processes in response to the needs of the marketplace. The enhanced performance of newer

LM103 zener

Abstract: jfet cascode 2N3069 J FET RF Cascode Input 2N3070 FM3954 pierce crystal oscillator 2n4416 jfet HI-FI tone control transistors FM1208
Contextual Info: FET Circuit Applications FET Circuit Applications National Semiconductor Application Note 32 February 1970 Polycarbonate dielectric TL H 6791 – 1 Sample and Hold With Offset Adjustment The 2N4339 JFET was selected because of its low lGSS k100 pA very-low lD(OFF) (k50 pA) and low pinchoff volt-

10PIN

Abstract: CXG1034TN C467
Contextual Info: CXG1034TN Receiving Mixer Description The CXG1034TN is a receiving mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. Features • Low distortion Input IP3=+1.5 dBm Typ. • Low LO input power operation PLO=–15 dBm • RF, LO input matching circuit

Application Notes

Abstract: matched pair JFET N CHANNEL jfet Low Noise Audio Amplifier jfet transistor for VCR "voltage controlled resistor" JFET APPLICATIONS igfet jfet differential transistor jfet p channel switch FET differential amplifier circuit
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors InterFET Application Notes Introduction T he field effect transistor was actually conceived before the more familiar bipolar transistor. Due to limited technology and later the

NTE864

Abstract: nte858m 748 opto NTE859 NTE859SM nte864 soic nte858 NTE869 NTE870 NTE858SM
Contextual Info: LINEAR INTEGRATED CIRCUITS NTE858M 8-Lead DIP, See Diag. 245 NTE858SM Surface Mount SOIC-8, See Diag. 550 Dual, Low Noise, JFET Input OP Amp, V cc = ±18V NTE859 14-Lead DIP, See Diag. 247 NTE859SM (Surface Mount) SOIC-14, See Diag. 551 Quad, Low Noise, JFET Input OP Amp,

p-channel jfet rf

Contextual Info: Preliminary Data Sheet BIPOLAR ANALOG INTEGRATED CIRCUIT PC835MN-KAA J-FET INPUT LOW-POWER DUAL OPERATIONAL AMPLIFIER The μPC835 is a J-FET input low-power operational amplifier featuring low offset voltage and stable AC operating characteristics . NEC's unique high-speed PNP transistor fT = 300 MHz in the output stage solves the oscillation

GO 80

Abstract: LA6083D
Contextual Info: Ordering number: EN 1958A Monolithic Linear JC LA6083D J-FET Input Dual Operational Amplifier The LA6O83D is a J-FET input dual operational amplifier. Application areas include general-purpose control equipment, measuring equipment very low current measurement, long-integrating circuit, sample & hold circuit, impedance

M9571

Abstract: M957 NS1957-2 LA6082M CMR-201 M-957
Contextual Info: O rdering num ber: EN 1957A Monolithic Linear 1C LA6082M J-FET Input Dual Operational Amplifier The LA6082M is a J-FET input dual operational amplifier. Application areas include general-purpose control equipment, measuring equipment very low current measurement, long-integrating circuit, sample & hold circuit, impedance

Contextual Info: UTC L8600 LINEAR INTEGRATED CIRCUIT FET BIAS CONTROLLER DESCRIPTION The UTC L8600 is designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components.

Contextual Info: UTC L8400 LINEAR INTEGRATED CIRCUIT FET BIAS CONTROLLER DESCRIPTION The UTC L8400 is designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components.

151-03 metal can

Abstract: lf351 LF151 LF251 33DM M3J3 33DH high Q notch filter 30hm
Contextual Info: ¿ Z T ^ 7£ S G S -T H O M S O N L F 151 L F 251 - L F 351 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS • LOW POWER CONSUMPTION ■ WIDE COMMON-MODE UP TO Vcc+ AND DIFFERENTIAL VOLTAGE RANGE ■ LOW INPUT BIAS AND OFFSET CURRENT ■ OUTPUT SHORT-CIRCUIT PROTECTION

NONLINEAR MODEL LDMOS

Contextual Info: Slide 1 Extracting RF Mosfet Spice Models MTT 1998 - Baltimore Md. by S. K. Leong Polyfet Rf Devices www.polyfet.com This presentation is available on our web site Slide 2 Why simulate? n n n n n n n Simulation - It’s the only way! Fast accurate results. What if analysis.

L8600

Contextual Info: UTC L8600 LINEAR INTEGRATED CIRCUIT FET BIAS CONTROLLER DESCRIPTION The UTC L8600 is designed to meet the bias requirements of GaAs and HEMT FETs commonly used in satellite receiver LNBs, PMR, cellular telephones etc. with a minimum of external components.

2N3797

Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

10PIN

Abstract: CXG1104TN
Contextual Info: CXG1104TN High Power SPDT Switch with Logic Control Description The CXG1104TN is a high power antenna switch MMIC for use in cellular handsets, for example, CDMA. The CXG1104TN has on-chip logic, which enables the switch circuit to operate by 1 CMOS control line.

AN211A

Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide

10PIN

Abstract: CXG1104TN
Contextual Info: CXG1104TN High Power SPDT Switch with Logic Control Description The CXG1104TN is a high power antenna switch MMIC for use in cellular handsets, for example, CDMA. The CXG1104TN has on-chip logic, which enables the switch circuit to operate by 1 CMOS control line.

TL031

Abstract: tl031 equivalent ic
Contextual Info: TL031, TL031A ENHANCED JFET LOW-POWER LOW-OFFSET OPERATIONAL AMPLIFIERS D3151, JULY 1 9 8 8 - R EVISED JANUARY 1989 • Maximum Offset Voltage . . . 800 iV • Very Low Power Consumption . . . 6.5 mW Typ • High Slew Rate . . . 2.9 V ^ s Typ • Output Short-Circuit Protection

m1305 transistor

Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Contextual Info: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082

C10535E

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4061 J-FET INPUT LOW-POWER OPERATIONAL AMPLIFIER DESCRIPTION The µPC4061 is a J-FET input low-power operational amplifier featuring low supply voltage operation from ±2 V. Supply current is ten times smaller than µPC4081 type J-FET input op-amp. With very low input bias current

BJT with i-v characteristics

Abstract: AD620 B4001 ad620 filter bjt differential amplifier application circuits op amp op80 AD621 AD827 AD845 OP249
Contextual Info: MT-096 TUTORIAL RFI Rectification Concepts INPUT-STAGE RFI RECTIFICATION SENSITIVITY A well-known but poorly understood phenomenon in analog integrated circuits is RFI rectification, specifically as it occurs in op amps and in-amps. While amplifying very small