JESD22 A113 Search Results

EIAJ ED-4701 305

Contextual Info: Reliability Test Category Environmental Test No Test Category Related Standards Test Conditions Purpose MIL-STD-883G IEC 60749 IEC 60068-2 JESD22 EIAJ ED-4701 ― Part 5 ― A101-C Method 102 To evaluate the endurance of the devices when used in high temperature and high humidity

JESD22-A104

Abstract: JESD22-A113 transistor A114 JESD22-C101 JESD22-A118 transistor C101 A101 A103 JESD22-A108 A108
Contextual Info: RF6281 Qualification Report Page 1 of 1 QLT-01090, Revision B Product Description A 3V High Band 1700/1900MHz linear amplifier module Package Type Laminate Module, 4 x 4 x 1 mm Process Technology GaAs Qualification # 06-QUAL‐756 06‐QUAL‐757

JESD22-A104

Abstract: JESD22-A113 transistor A114 JESD22 JESD22A104 rf6285 JESD22-A114 A114 transistor NK80530VY400256 a118
Contextual Info: RF6285 Qualification Report Page 1 of 1 QLT-01093, Revision C Product Description A high-power, high‐efficiency multi‐band linear power amplifier module Package Type Laminate Module 5.5 x 6 x 1 mm Process Technology GaAs Qualification #

JESD22-A104

Abstract: JESD22-A113 transistor A114 A114 transistor JESD22-B102 JESD22-C101 JESD22 JESD22-A114 transistor C101 A101
Contextual Info: RF1132 Qualification Report Page 1 of 1 QLT-03370, Revision B Product Description Broadband High Power SP3T Switch Package Type 2 x 2 x 0.55 mm 12-pin QFN Process Technology GaAs Qualification # 08‐QUAL‐1082 08‐QUAL‐1062 Date Issued

Qual

Abstract: A104 A108 A113
Contextual Info: W3E64M72S-XSBX Application Note W3E64M72S-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects TG = 150°C Moisture sensitivity is to JEDEC level 3 Burn-In – 100% at 125°C Final Electrical Test – 100% at maximum and

Sn63

Abstract: A104 A108 A113 WEDPN4M64V-XBX WEDPN4M72V-XB2X
Contextual Info: White Electronic Designs WEDPN4M72V-XB2X WEDPN4M64V-XBX PBGA MULTI-CHIP PACKAGE CONSTRUCTION ENCAPSULANT TEST „ Thickness around die = 0.015” to 0.020” typical „ Burn-In – 100%-48 hours at 125°C „ The encapsulant is not injection molded to control

JESD22

Abstract: WEDPN16M72V-XB2X A104 A108 A113 WEDPN16M64V-XB2X
Contextual Info: WEDPN16M72V-XB2X WEDPN16M64V-XB2X White Electronic Designs PBGA MULTI-CHIP PACKAGE CONSTRUCTION ENCAPSULANT TEST Thickness around die = 0.015 to 0.020 typical Burn-In – 100%-48 hours at 125°C The encapsulant is not injection molded to control wire sweep effects

JESD22

Abstract: A104 A108 A113 W364M72V-XSBX
Contextual Info: White Electronic Designs W364M72V-XSBX PBGA MULTI-CHIP PACKAGE CONSTRUCTION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects Burn-In – 100%-48 hours at 125°C TG = 150°C Final Electrical Test – 100% at maximum and

W3E64M16S-XSBX

Abstract: A104 A108 A113
Contextual Info: W3E64M16S-XSBX Application Note W3E64M16S-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects TG = 150°C Moisture sensitivity is to JEDEC level 3 Burn-In – 100%-48 hours at 125°C

JESD22

Abstract: W3H32M72E-XSBX A104 A108 A113
Contextual Info: W3H32M72E-XSBX Application Note W3H32M72E-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects TG = 150°C Moisture sensitivity is to JEDEC level 3 Burn-In – 100%-48 hours at 125°C

JESD22

Abstract: SN63 PB37 A104 A108 A113 W332M64V-XSBX
Contextual Info: W332M64V-XSBX Application Note W332M64V-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST Thickness around die = 0.015 to 0.020 typical The encapsulant is not injection molded to control wire sweep effects Burn-In – 100%-48 hours at 125°C Final Electrical Test – 100% at maximum and

JESD22

Abstract: A104 A108 A113 W3H32M64E-XSBX
Contextual Info: W3H32M64E-XSBX Application Note W3H32M64E-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects TG = 150°C Moisture sensitivity is to JEDEC level 3 Burn-In – 100%-48 hours at 125°C

EIA/JESD22

Abstract: A104 A108 A113 W764M32V-XSBX
Contextual Info: W764M32V-XSBX Application Note W764M32V-XSBX PACKAGE CONSTRUCTION + QUALIFICATION ENCAPSULANT TEST The encapsulant is not injection molded to control wire sweep effects TG = 150°C Moisture sensitivity is to JEDEC level 3 Burn-In – 100%-48 hours at 125°C

Shipping Trays

Abstract: A104 A108 A113 W72M64VK-XBX
Contextual Info: W72M64VK-XBX Application Note W72M64VK-XBX PACKAGE CONSTRUCTION + QUALIFICATION ORGANIZATION TEST 2M x 64 4 banks per Flash Burn-In – 100%-48 hours at 125°C Final Electrical Test – 100% at maximum and minimum ambient temperatures Temperature Ranges Available:

JESD22

Abstract: Sn46 PB46 7410E A104 A108 A113 WED3C7410E16M-400BX
Contextual Info: WED3C7410E16M-400BX POWER PC 7410E MULTI-CHIP PACKAGE CONSTRUCTION HIGH RELIABILITY FLIP CHIP ATTACH TEST • C4 Assembly on PowerPC™ Processors & SSRAM die ■ Burn-In - 100%, 48 hours at 125°C ■ JEDEC Level 2 underfill ■ Die Thickness ■ Final Electrical Test - 100% at maximum and

JESD22

Abstract: A104 A108 A113 W72M64V-XBX
Contextual Info: W72M64V-XBX 2M X 64 FLASH PBGA MULTI-CHIP PACKAGE CONSTRUCTION ORGANIZATIONS „ BALLS 2M x 64 Flash „ „ ENCAPSULANT „ „ „ TEST The encapsulant is not injection molded to control wire sweep effects TG = 150°C Moisture sensitivity is to JEDEC level 3 „

A104

Abstract: A108 A113 WEDPS512K32V-XBX WEDPS512K32-XBX
Contextual Info: WEDPS512K32-XBX WEDPS512K32V-XBX White Electronic Designs 512K x 32 SRAM PBGA MULTI-CHIP PACKAGE CONSTRUCTION ENCAPSULANT TEST n Thickness around die = 0.015 to 0.020 typical n The encapsulant is not injection molded to control wire sweep effects n TG = 150°C

SN46

Abstract: PB46 JESD22 A104 A108 A113 WED3C750A8M-200BX
Contextual Info: White Electronic Designs WED3C750A8M-200-BX WED3C7558M-300-BX POWER PC™ MULTI-CHIP PACKAGE CONSTRUCTION HIGH RELIABILITY FLIP CHIP ATTACH TEST • C4 Assembly on PowerPCÔ Processors & SSRAM die ■ Burn-In - 100%, 48 hours at 125°C ■ Final Electrical Test - 100% at maximum and

A104

Abstract: A108 A113 W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX Qual 0004x
Contextual Info: W332M64V-XBX W332M72V-XBX W3E32M64S-XBX W3E32M72S-XBX White Electronic Designs 256MB SDRAM and DDR PBGA MULTI-CHIP PACKAGE CONSTRUCTION ORGANIZATIONS BALLS „ 32M x 64 SDRAM „ Eutectic solder Sn63/Pb37 „ 32M x 72 SDRAM „ Diameter = 0.762mm 0.030 Nominal

WEDPN8M72VR-XBX

Abstract: A108 A113 WEDPN16M64VR-XBX WEDPN16M64V-XBX WEDPN16M72VR-XBX WEDPN16M72V-XBX WEDPN8M64VR-XBX
Contextual Info: WEDPN16M64V-XBX WEDPN16M72V-XBX WEDPN16M64VR-XBX WEDPN16M72VR-XBX WEDPN8M64VR-XBX WEDPN8M72VR-XBX White Electronic Designs 64MB/128MB REGISTERED SDRAM & 128MB SDRAM PBGA MULTI-CHIP PACKAGE CONSTRUCTION ORGANIZATIONS 16M x 64 SDRAM BALLS n n Eutectic solder Sn63/Pb37

PV smd transistor

Abstract: JEDEC htrb bd 142 transistor
Contextual Info: GeneSiC Semiconductor Reliability Report on 1200 V SiC Junction Transistor SJT Devices Revision 1.1 (Jan. 2014) 1 Table of Contents 1. Report Summary . 3 2. Reliability Test Plan . 3

Contextual Info: GeneSiC Semiconductor Reliability Report on 1200 V SiC Schottky Rectifiers Revision 1.1 Nov. 2013 1 Table of Contents 1. Report Summary . 3 2. Reliability Test Plan . 3

transistor 70603

Abstract: 70603 a103 636 transistor 70603 scr JESD A114 A101 A102 A103 S/transistor 70603 JESD-22
Contextual Info: SST Product Reliability Technical Paper 1.0 INTRODUCTION The SST quality policy is: To satisfy customer requirements by providing products and services that are cost effective, on schedule, and with zero nonconformances to specifications. SST is developing a quality system in accordance with

JESD22 a113

Abstract: CY7C64601 CY7C64603 CY7C64613 EME-6300 JESD22 Fab25 rh1003
Contextual Info: Cypress Semiconductor Product/Technology Qualification Report QTP# 000602 VERSION 2.1 November, 2000 Full Speed CYUSB Family CY7C64601 CY7C64603 CY7C64613 EZ-USB FX USB Microcontroller CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director