JEDEC PACKAGE MO-220 40 PIN Search Results

OS-PD-2005-005

Abstract: 11001T
Contextual Info: Multi TOPLED Enhanced Optical Power LED HOP2000 LSY T67B Non-RoHS compliant version of product will be discontinued acc. to OS-PD-2005-005. The product itself will remain within RoHS compliant version. Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-4 Gehäuse,

Q65110A2431

Abstract: A671 transistor A671 marking codes LXX 05 sideled OSRAM
Contextual Info: Multi SIDELED Bright Green Die Lead Pb Free Product - RoHS Compliant LSG A671 Nicht für Neuentwicklungen Not for new designs Besondere Merkmale Features • Gehäusetyp: weißes SMT Gehäuse, farbloser klarer Verguss • Besonderheit des Bauteils: Abstrahlung

Q65110A2441

Contextual Info: Hyper Multi TOPLED Hyper-Bright LED Lead Pb Free Product - RoHS Compliant LSB T676 Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Verguss • Besonderheit des Bauteils: extrem breite

mosfet "marking code 44" sot-23-6

Abstract: APM2706C MOSFET N SOT-23 STD-020C apm27 AB SOT-23-6
Contextual Info: APM2706C Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel D1 S1 30V/3A, D2 RDS(ON)= 55mΩ(typ.) @ VGS= 10V RDS(ON)= 80mΩ(typ.) @ VGS= 4.5V • G1 P-Channel S2 G2 -30V/-2.2A, Top View of SOT-23-6 RDS(ON)= 100mΩ(typ.) @ VGS= -10V

topled t670

Abstract: Q65110A2437 T670
Contextual Info: Multi TOPLED Lead Pb Free Product - RoHS Compliant LSG T670, LSP T670, LOP T670, LYG T670 Nicht für Neuentwicklungen / Not for New Designs Besondere Merkmale Features • Gehäusetyp: weißes P-LCC-4 Gehäuse, farbloser klarer Verguss • Besonderheit des Bauteils: beide

Q65110A2437

Abstract: LYG T676 Q65110-A2437 Q65110A2438 T670 OS-PD-2006 T670-JL-1 OSRam LSG T676 Q65110A2440 Q65110A2436
Contextual Info: Multi TOPLED Lead Pb Free Product - RoHS Compliant LSG T670, LSP T670, LSY T670, LOP T670, LYG T670 LSY_T670 abgekündigt nach OS-PD-2006-009 wird durch LSY_T676 ersetzt werden. LSY_T670 obsolete acc. to OS-PD-2006-009 will be replaced by LSY_T676. Besondere Merkmale

Contextual Info: Multi TOPLED Lead Pb Free Product - RoHS Compliant LSG T670, LSP T670, LSY T670, LOP T670, LYG T670 LSY_T670 abgekündigt nach OS-PD-2006-009 wird durch LSY_T676 ersetzt werden. LSY_T670 obsolete acc. to OS-PD-2006-009 will be replaced by LSY_T676. Besondere Merkmale

Contextual Info: 2013-08-01 OSRAM OSTAR Stage Datasheet Version 1.1 LE UW S2W Outstanding brightness and luminance due to surface emission and low Rth Extrem hohe Helligkeit und Leuchtdichte dank Oberflächenemission und niedrigem Rth Features: Besondere Merkmale: • Package: compact lightsource in multi chip SMT

HA2-5002-2

Abstract: HA2-5002-5 HA3-5002-5 HA3-5002-5Z HA4P5002-5 HA-5002 LH0002 HA5002-5 HA-5002-2
Contextual Info: HA-5002 Data Sheet FN2921.11 110MHz, High Slew Rate, High Output Current Buffer Features The HA-5002 is a monolithic, wideband, high slew rate, high output current, buffer amplifier. • High Input Impedance . . . . . . . . . . . . . . . . . . . . . .3000kΩ

405C

Abstract: NLAS3699 NLAS3699MN1R2G STG3699
Contextual Info: NLAS3699 Dual DPDT Ultra−Low RON Switch The NLAS3699 is a dual independent ultra−low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699 can handle a balanced

405C

Abstract: NLAS3699B NLAS3699BMN1R2G STG3699
Contextual Info: NLAS3699B Dual DPDT Ultra−Low RON Switch The NLAS3699B is a dual independent ultra−low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699B can handle a

4783

Abstract: 405C MAX4783 NLAS4783B NLAS4783BMN1R2G jedec package MO-220 QFN 20
Contextual Info: NLAS4783B Triple SPDT 1.0 W RON Switch The NLAS4783B is a triple independent low RON SPDT analog switch with ENABLE. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS4783B

NLAS

Abstract: 405C MAX4783 NLAS4783 NLAS4783MN1R2G
Contextual Info: NLAS4783 Triple SPDT 1.0 W RON Switch The NLAS4783 is a triple independent ultra−low RON SPDT analog switch with ENABLE. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS4783

A114

Abstract: A115 CM2500 NLSF2500 NLSF2500MN1R2G
Contextual Info: NLSF2500 Keypad Multiplexer The NLSF2500 is a keyboard multiplexer fabricated in sub−micron silicon CMOS Technology. The NLSF2500 is designed to operate over wide operating voltage, with minimum power consumption and very low voltage drop from VCC. The device saves dozens of active

Contextual Info: CENTELLAX UXN14M9P Datasheet 14 GHz Divide-by-8 to 511 Programmable Integer Divider Features • • • • • • • Wide Operating Range: DC - 14 GHz Contiguous Divide Ratios: 8 to 511 Large Output Swings: >1 Vpp/side Single-Ended or Differential Drive

Contextual Info: NLAS3699 Dual DPDT Ultra−Low RON Switch The NLAS3699 is a dual independent ultra−low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699 can handle a balanced

Contextual Info: HIP2500 HARRIS S E M I C O N D U C T O R Half Bridge 500VDC Driver March 1995 Description Features • Maximum R a tin g . 500V • Ability to Interface and Drive N-Channel Power Devices • Floating Bootstrap Power Supply for Upper Rail

samsung led tv service manual

Abstract: trm 3013 samsung tv service manual
Contextual Info: ISSUE NO Rev: DATE OF ISSUE : 2 0 0 7 . 1 2 . 0 4 SPECIFICATION MODEL : SLSRGBW81 5TSCSSP [Approved Rank : VF S , CIE(S1, S2), lv(AAA, AAB, AAC, BAA, BAB, BAC, CAA, CAB, CAC)] RGBW TOP VIEW CUSTOMER : CUSTOMER : DRAWN CHECKED APPRO VED SAMSUNG ELECTRO-MECHANICS

Contextual Info: A I R EM I C O C H S eptem ber 1983 I L D N D U G Revised February 1999 T O R TM MM74HC139 Dual 2-To-4 Line Decoder equivalent to the 74LS139. All inputs are protected from dam age due to static discharge by diodes to V qq and General Description The M M 74H C 139 deco d e r utilizes advanced silicon-gate

RCA 559 TO3

Contextual Info: Silicon Rectifiers Standard Types Av. RCA Type 'o A Forward Current Surge Temp.-TA 1FSM A o Voltage Package C V RRM V Temp. Range Operating o C Voltage Drop VF V 'o A 6-A Types 1N1341B 1N1342B 1N1344B 1N1345B 1N1346B 1N1347B 1N1348B 6 6 6 160 160 160 160 160

WLCSP stencil design

Abstract: ja 16201 WLCSP smt Texas SBVA017 wcsp wcsp reliability A104B IPC-7525 JESD22 S2062
Contextual Info: Application Report SBVA017 - February 2004 NanoStart & NanoFreet 300mm Solder Bump Wafer Chip-Scale Package Application Jim Rosson High Performance Analog—MAKE Packaging ABSTRACT The NanoStartWafer Chip-Scale Package WCSP is a family of bare die packages

Contextual Info: HIP2500 HARRIS S E M I C O N D U C T O R Half Bridge 500VDC Driver April 1997 Description Features Maximum R a tin g . 500V Ability to Interface and Drive N-Channel Power Devices Floating Bootstrap Power Supply for Upper Rail

180v dc motor drive circuit diagram

Abstract: IR2110 h bridge application notes
Contextual Info: HARRIS HIP2500 cesss e e S E M I C O N D U CC TT O0 RR Half Bridge July 1998 5 0 0 V DC Driver Description Features Maximum R a tin g . 500V Ability to Interface and Drive N-Channel Power Devices Floating Bootstrap Power Supply for Upper Rail

Contextual Info: 33 HIP5010, HIP5011 7V, 17A SynchroFET Complementary Drive Synchronous Half-Bridge March 1996 Features Description • Complementary Drive, Half-Bridge Power NMOS Designed with the P6 and Pentium in mind, the Harris Synchro­ FET™ family provides a new approach for implementing a syn­