11001T Search Results

Contextual Info: 1992 1M x 1 Monolithic CMOS DRAM molate M D M 1 1 0 0 1 - T /V /V X /G /J Issue 2.0 : September 1992 Mosaic Semiconductor PRELIMINARY Inc. 1,048,576 x 1 CMOS High Speed Dynamic RAM Pin Definition Package Type: T .V '.'G ' Features Row Access Times of 80/100/120 ns

Contextual Info: TM M -110-01-T-D-SM T M M -112-01-G -S -S M E X T E N D E D LIFE P R O D U C T 2,00mm .0787" 10 year Mixed Flowing Gas with 30p’ Gold 1.000 cycles v/hen mated with SMM T M M SERIES LOW PROFILE SMT HEADER SPECIFICATIONS For complete specifications and recommended PCB layouts

Contextual Info: F-207 S- T .0 2 5 so TER M IN A L STR IPS M ates with: SSW, SSQ, SSM, BSW, ESW, ESQ, BCS, SLW, CES, IDSS, IDSD, HLE n TSM □ LEAD STYLE 1 I n o . PINS 1 I PER Row t c iw i SPECIFICATIONS 02 thru 36 For complete specifications and recommended PCB layouts see www.samtec.com?TSM

Contextual Info: F-206 T M M -110-01-T-D -SM T M M -112-01-G -S -S M T M M -1 3 0 -05 -L -S -S M surrace S«T 2m m HEADER For complete specifications and recommended PCB layouts see www.samtec.comvTMM Insulator Material: Black Liquid Crystal Polymer Terminal Material: Phosphor Bronze

zenerdiode 218

Abstract: SMPS battery tea1100 philips tea charger 16 pin EA1100T TEA1100T
Contextual Info: INTEGRATED CIRCUITS im m 1C m TEA1100; TEA1100T Battery monitor for NiCd and NiMH chargers May 1992 Preliminary specification File under Integrated Circuits, IC03 Philips Semiconductors PHILIPS / PHILIPS Preliminary specification Philips Semiconductors Battery monitor for NiCd and NiMH

Contextual Info: m o l a 1M x 1 Monolithic CMOS DRAM t e Issue 1.1 : February 1992 M DM11001 -T/V/VX/G/J Mosaic Semiconductor PRELIMINARY Inc. 1,048,576 x 1 CMOS High Speed Dynamic RAM Pin Definition Package Type: T .V .'G ' Features Row Access Times of 80/100/120 ns High Density 300mil DIP and 100mil VIL

NAT4882D

Abstract: NAT4882BPL PD7210 XPD7210 TMS9914 9914A TMS9914A IPD7210 Turbo488 JPD7210
Contextual Info: IEEE 488.2 Controller NAT4882BPL NAT4882BPL Features • Performs all IEEE 488.1 interface functions - Source Handshake SH I - Acceptor Handshake (AH1) - Talker or Extended Talker (T5 or TE5) - Listener or Extended Listener (L3 or LE3) - Service Request (SRI)

Contextual Info: F-205-1 T M M -110-01-T-D -SM T M M -112-01-G -S -S M T M M -1 3 0 -05 -L -S -S M 2mm HEADER SPECIFICATIONS For complete specifications see www.samtec.com?TMM TMM SERIES Mates with: CLT, SQT, SQW, ESQT, TLE, SMM, MMS, TCSD Insulator Material: Black Liquid Crystal

Contextual Info: F-206-1 T M M -110-01-T-D -SM T M M -112-01-G -S -S M T M M -1 3 0 -05 -L -S -S M S«T12mm HEADER o u iia u e Insulator Material: Black Liquid Crystal Polymer Terminal Material: Phosphor Bronze Plating: Sn or Au over 50p" 1,27pm Ni Operating Temp Range:

04S47

Contextual Info: F-207-1 S- T .0 2 5 so TER M IN A L STR IPS M ates with: SSW, SSQ, SSM, BSW, ESW, ESQ, BCS, SLW, CES, IDSS, IDSD, HLE n TSM □ LEAD STYLE 1 I n o . PINS 1 I PER Row t c iw i SPECIFICATIONS I 02 thru 36 For complete specifications and recommended PCB layouts

Contextual Info: F -2 0 4 sam Tec T M M -110-01-T-D -S M T M M -1 1 2 -0 1 -G -S -S M 2mm HEADER S P E C IF IC A T IO N S For complete specifications see www.samtec.com?TMM TMM SERIES Mates with: CLT, SQT, SQW, ESQT, TLE, SMM, MMS, TCSD s' 2,00mmj' .0787"pitch Insulator Material:

D316251

Abstract: MOSAIC SEMICONDUCTOR pin diagram 7420 DM11001 n 246 cmos 7420 CZ124 MIL883D
Contextual Info: h ' 1M x 1 Monolithic CMOS DRAM molate Issue 1.1 : February 1992 M D M 1 1 0 0 1 -T /V /V X /G /J Mosaic Semiconductor PRELIMINARY Inc. 1,048,576 x 1 CMOS High Speed Dynamic RAM Features Row Access Times of 80/100/120 ns High Density 300mil DIP and 100mil VIL