JEDEC FBGA Search Results
JEDEC FBGA Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TMP139AIYAHR | Texas Instruments | JEDEC DDR5 temperature sensor with 0.5 °C accuracy 6-DSBGA -40 to 125 |
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| SN74SSQEA32882ZALR | Texas Instruments | JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 |
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| SN74SSQE32882ZALR | Texas Instruments | JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 |
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| SN74SSQEB32882ZALR | Texas Instruments | JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 |
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| SN74SSQEC32882ZALR | Texas Instruments | JEDEC SSTE32882 Compliant Low Power 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 |
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JEDEC FBGA Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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AS4C32M16D2Contextual Info: AS4C32M16D2 512M 32M x 16 bit DDRII Synchronous DRAM (SDRAM) Confidential Advanced (Rev. 1.1, Feb. /2013) Features Overview • JEDEC Standard Compliant JEDEC standard 1.8V I/O (SSTL_18-compatible) Power supplies: VDD & VDDQ = +1.8V 0.1V Supports JEDEC clock jitter specification |
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as4c32m16d218-compatiblelat19 | |
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Contextual Info: AS4C32M16D2 512M 32M x 16 bit DDRII Synchronous DRAM (SDRAM) Confidential Advanced (Rev. 1.1, Feb. /2013) Features Overview • JEDEC Standard Compliant JEDEC standard 1.8V I/O (SSTL_18-compatible) Power supplies: VDD & VDDQ = +1.8V 0.1V Supports JEDEC clock jitter specification |
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as4c32m16d218-compatiblelat19 | |
K4W1G1646D-EC15
Abstract: K4W1G1646D-EJ11 K4W1G1646D-EC gDDR3-1800 DDR3 DIMM 240 pinout GDDR3 SDRAM 256Mb JESD51-2 VIH150 SAMSUNG GDDR3 K4W1G1646D
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k4w1g1646dk4w1g1646d-ec15k4w1g1646d-ej11k4w1g1646d-ec+6 | |
K4W1G1646E
Abstract: samsung K4W1G1646E-HC11
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k4w1g1646esamsung k4w1g1646e-hc11 | |
K4W1G1646D-EC15
Abstract: K4W1G1646D
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k4w1g1646dk4w1g1646d-ec15 | |
k4b1g1646
Abstract: k4b1g08 samsung ddr3 DDR3-1066 JESD79-3B
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k4b1g04k4b1g1646k4b1g08samsung ddr3+2 | |
samsung ddr3
Abstract: DDR3 DIMM 240 pinout DDR3-1066 DDR3-1333 K4B1G16 Design Guide for DDR3-1066 k4b1g08 K4B1G0846D K4B1G0446D DDR3-800-666
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k4b1g04samsung ddr3ddr3 dimm 240 pinoutddr3-1066+7 | |
K4B2G1646B-HCH9
Abstract: "2Gb DDR3 SDRAM" k4B2G1646 k4b2g1646b 128mx16 ddr3 K4B2G0846B-HCH9 samsung DDR3 SDRAM 2GB K4B2G16 DDR3 DRAM 2GB 128Mx16 96BALL FBGA K4B2G0846B-HCF7
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k4b2g04k4b2g1646b-hch92gb ddr3 sdramk4b2g1646+7 | |
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Contextual Info: 1Gb DDR3 SDRAM K4B1G04 08/16 46D 1Gb D-die DDR3 SDRAM Specification 82 / 100 FBGA with Pb-free & Halogen-Free (RoHS Compliant) CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress. |
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k4b1g04 | |
MO-205
Abstract: TAPE AND REEL BGA 54-BALL
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bga54a96-ballmo-205bga96a+4 | |
A110 E
Abstract: TSW11
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k4b510846e512mba110 etsw11 | |
EM68B16CWQC
Abstract: EM68B16C EM68B16CWQC-25H 6-10PER EM68B16 DDR2-667 DDR2-800 EM68B16CW
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em68b16cwqc18-compatible333/400mhz84-ball+7 | |
EM68B16CWPA
Abstract: EM68B16CWPA-25H EM68B16C Etron DDR2-667 DDR2-800 2TWR EM68B16CWPA25H
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em68b16cwpa18-compatible333/400mhz84-ball+7 | |
EM68A16CWQB-25H
Abstract: EM68A16CWQB 2TWR EM68A Etron em68a16
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em68a16cwqb18-compatible333/400mhz84-ball+5 | |
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JEDEC SPD No.21
Abstract: JEDEC MO 224 MO-224 dimm ddr 400 x16 configuration sdram pcb gerber PC2100 PC2700 SDA Physical Layer Specification Version 2.00 gerber so-dimm 200
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pc2700mo-224jedec spd no.21jedec mo 224+5 | |
AS4C128M8D2Contextual Info: AS4C128M8D2 128M x 8 bit DDRII Synchronous DRAM SDRAM Confidential Advanced (Rev. 1.0, Jun. /2013) Features Overview • JEDEC Standard Compliant JEDEC standard 1.8V I/O (SSTL_18-compatible) Power supplies: VDD & VDDQ = +1.8V 0.1V Operating temperature range |
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as4c128m8d218-compatible | |
AS4C64M8D2Contextual Info: AS4C64M8D2 512M – 64M x 8 bit DDRII Synchronous DRAM (SDRAM) Confidential (Rev. 1.0, Feb. /2014) Features Overview • JEDEC Standard Compliant JEDEC standard 1.8V I/O (SSTL_18-compatible) Power supplies: VDD & VDDQ = +1.8V 0.1V Operating temperature: 0 – 95 °C |
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as4c64m8d218-compatible | |
SAMSUNG ELECTRONICS ddr4Contextual Info: Rev. 0.5, Feb. 2014 K4A4G165WD Preliminary 4Gb D-die DDR4 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free RoHS compliant CAUTION : This document includes some items still under discussion in JEDEC. Therefore, those may be changed without pre-notice based on JEDEC progress. |
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k4a4g165wd96fbgasamsung electronics ddr4 | |
K4T1G164QF
Abstract: M470T5663FB3-C
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m470t2864fb3m470t5663fb3200pin60fbga/84fbga+5 | |
BF96A
Abstract: CY2SSTU32864 Q11A delta v dcs t1 96x M4F4
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cy2sstu3286425-bit14-bit96-ball+5 | |
CY2SSTU32864
Abstract: Q11A Q13A Q15-25 CY2SSTU32864BVXIT CY2SSTU32864BVXI BA96A t1 96x
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cy2sstu3286425-bit14-bit96-ball+7 | |
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Contextual Info: V826765G24SA 1GB 200-PIN DDR UNBUFFERED SODIMM 128M x 64 Features Description • JEDEC 200 Pin DDR Unbuffered Small-Outline, Dual In-Line memory module SODIMM ; 134,217,728 x 64 bit organization. ■ Utilizes High Performance 64M x 8 DDR SDRAM in FBGA Packages |
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v826765g24sa200-pinddr400pc400b | |
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Contextual Info: V826765G24SB 1GB 200-PIN DDR UNBUFFERED SODIMM 128M x 64 Features Description • JEDEC 200 Pin DDR Unbuffered Small-Outline, Dual In-Line memory module SODIMM ; 134,217,728 x 64 bit organization. ■ Utilizes High Performance 64M x 8 DDR SDRAM in FBGA Packages |
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v826765g24sb200-pinddr400 | |
ddr4Contextual Info: V826765G24SB 1GB 200-PIN DDR UNBUFFERED SODIMM 128M x 64 Features Description • JEDEC 200 Pin DDR Unbuffered Small-Outline, Dual In-Line memory module SODIMM ; 134,217,728 x 64 bit organization. ■ Utilizes High Performance 64M x 8 DDR SDRAM in FBGA Packages |
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v826765g24sb200-pinddr400pc400b+1 | |