JEDEC 46C Search Results

jedec 46c

Abstract: leadframe materials
Contextual Info: Process Name: Product Change Notification PCN Revision Level: 9 Last Update: 08/26/2010 Scope: Microelectronics WW, All customers that participate in the automated Microelectronics Process via the PCN Enabler using the Customer Connect interface. The goal is to meet the JEDEC guidelines as often as possible,

Contextual Info: m EDI8F32256C 256KX32 SRAM Module Sl e c t r o n ic DESIGNS, IN C I Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static Random Access Memory • Access Times BiCMOS: 10 and 12ns CMOS: 15,20,25, and 35ns • Individual Byte Selects • Fully Static, No Clocks

MN128

Abstract: jedec 46c
Contextual Info: W EDI8F32259C D l electronic designs inc» 256KX32SRAM Module 256Kx32Static RAM CMOS, H itfi Speed Module Features 256Kx32 bit CMOS Static The EDI8F32259C is a high speed 8 megabit Static RAM Random Access M emory module organized as 256K words by 32 bits. This module is

EDI8F32256C

Abstract: IxXx
Contextual Info: ^EDI EDI8F32256C 256KX32 SRAM Module ÍLECTRONIC DESIGNS, IN C I Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static The EDI8F32256C is a high speed 8 megabit Static RAM Random Access Memory • • • module organized as 256K words by 32 bits. This module is

Contextual Info: ^EDI EDI8F32128C ELECTRONIC D ESIGNSINCl 128KX32 SR AM Module 128Kx32 Static RAM CMOS, High Speed Module Features 128Kx32 bit CMOS Static The EDI8F32128C is a high speed 4 megabit Static RAM Random Access Memory module organized as 128K words by 32 bits. This module is

2u20 diode

Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
Contextual Info: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors

AT93C46C

Abstract: AT93C46C-10PC AT93C46C-10PI AT93C46C-10SC AT93C46C-10SI
Contextual Info: Features • Low-Voltage and Standard-Voltage Operation - 5.0 Vcc = 4.5V to 5.5V - 2.7 (Vcc = 2.7V to 5.5V) - 2.5 (Vcc = 2.5V to 5.5V) • 3-W ire Serial Interface • Schm itt Trigger, Filtered Inputs for Noise Suppression • 2 MHz Clock Rate (5V) Com patibility

a1s hb

Contextual Info: EDI8F32258C '256Kx32 SRAM Module F e a tu re s 256Kx32 Static RAM CMOS, High SpeedModule 256Kx32 bit CMOS Static The EDI8F32258C is a high speed 8 megabit Static RAM Random Access Memory module organized as 256K words by 32 bits. This module is • Access Times

Contextual Info: EDI8F32258C 1256Kx32 SRAM Module fe a tu re s 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static The EDI8F32258C is a high speed 8 megabit Static RAM Random Access Memory module organized as 256K words by 32 bits. This module is • Access Times

Contextual Info: EDI8F32256C ^ E D I 256Kx32 SRAM Module ELECTRONIC DESIGN! N C l Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static The EDI8F32256C is a high speed 8 megabit Static RAM Random Access Memory • module organized as 256K words by 32 bits. This module is

K4B1G1646C-ZCF7

Abstract: jedec 46c DDR3-1066 K4B1G0446C-ZCF7 K4B1G0846C-ZCF7 samsung ddr3 K4B1G1646C atxp1 K4B1G0446C
Contextual Info: 1Gb DDR3 SDRAM K4B1G04 08/16 46C 1Gb C-die DDR3 SDRAM Specification Revision 1.0 June 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Contextual Info: HIGH SPEED 4K X 8 DUAL-PORT STATIC RAM WITH SEMAPHORE D e sc rip tio n F e a tu re s • High-speed access - Commercial: 20/25/35/45/55/70ns max. • Low-power operation - IDT71342SA Active: 700mW(typ.) Standby: 5m W (typ.) - ID T 7 1 3 4 2 S A /L A IDT71342LA

Contextual Info: CMOS SyncFIFO 256x18, 5 1 2 x 1 8 ,1 ,0 2 4 x 1 8 , 2,048x18 and 4,096x18 FEATURES: • • • • • • • • • • • • • • • • 256 x 18-bit organization array IDT72205LB 512 x 18-bit organization array (IDT72215LB) 1,024 x 18-bit organization array (IDT72225LB)

jedec 46c

Abstract: DQ8-DQ11
Contextual Info: ^ E D EDI8F32259V I ELECTRONICDESIGNS,INC. 25SKx32 SRAM Module ADVANCED Features 256KX32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static Random Access Memory The EDI8F32259V is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module

K4B2G1646C

Abstract: k4B2G1646 128mx16 ddr3 K4B2G0846C-HCH9 K4B2G0846C-HCK0 samsung ddr3 "2Gb DDR3 SDRAM" DDR3 DIMM 240 pinout HCF8 K4B2G0446C
Contextual Info: 2Gb DDR3 SDRAM K4B2G04 08 46C 2Gb C-die DDR3 SDRAM Specification 78 FBGA with Lead-Free & Halogen-Free (RoHS Compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE

Contextual Info: Datasheet SHT21P Humidity and Temperature Sensor Fully calibrated Analog output, PWM interface Low power consumption Excellent long term stability DFN type package – reflow solderable • •    Product Summary SHT21P, the new humidity and temperature sensor of

SHT21P

Abstract: SHT21 SHT1x i2c THB 2411
Contextual Info: Datasheet SHT21P Humidity and Temperature Sensor • •    Fully calibrated Analog output, PWM interface Low power consumption Excellent long term stability DFN type package – reflow solderable Product Summary SHT21P, the new humidity and temperature sensor of

Contextual Info: Datasheet SHT20P Humidity and Temperature Sensor IC • •    Fully calibrated Analog output, PWM interface Low power consumption Excellent long term stability DFN type package – reflow solderable Product Summary SHT20P, the new humidity and temperature sensor of

Contextual Info: Datasheet SHT21P Humidity and Temperature Sensor IC • •    Fully calibrated Analog output, PWM interface Low power consumption Excellent long term stability DFN type package – reflow solderable Product Summary SHT21P, the new humidity and temperature sensor of

SHT20

Abstract: SHT20P SHT20 QFN SHT20 version 2 STAEFA RH 2000
Contextual Info: Datasheet SHT20P Humidity and Temperature Sensor IC Fully calibrated Analog output, PWM interface Low power consumption Excellent long term stability DFN type package – reflow solderable • •    Product Summary SHT20P, the new humidity and temperature sensor of

Contextual Info: GENL IN S T R / asE POüJER » • 3 a ci Q i 3 7 Q Q a a a ib i ■ r - o l - 1 3 1 N 4 0 0 1 P T H R U 1 N 4 0 0 7 P MINIATURE PLASTIC SILICON RECTIFIER VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere FEATURES ♦ The plastic package carries Underwriters

Contextual Info: SK42C - SK420C 4.0 Amp. Surface Mount Schottky Barrier Rectifier Current 4.0 A Voltage 20 V to 200 V DO-214AB / SMC FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability • Guarding for overvoltage protection

Contextual Info: SK42C - SK420C 4.0 Amp. Surface Mount Schottky Barrier Rectifier Current 4.0 A Voltage 20 V to 200 V DO-214AB / SMC FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability • Guarding for overvoltage protection

Contextual Info: SK42C - SK420C 4.0 Amp. Surface Mount Schottky Barrier Rectifier Current 4.0 A Voltage 20 V to 200 V DO-214AB SMC FEATURES • Low profile package • Ideal for automated placement • Low power losses, high efficiency • High surge current capability • Guarding for overvoltage protection