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    JE 800 TRANSISTOR Search Results

    JE 800 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    JE 800 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    npn 222

    Abstract: 251bf "AGC Amplifier" AM "AGC Amplifier" AM FM radio AM/FM bf 233 BF222 agc amplifier F VHF amplifier
    Contextual Info: CONSUMER TRANSISTORS continued o Q. > i> 0 CL Li] CD >~ < O ÜJ ÜJ JE > > U. o _c s> 0) > X o L» CM II I- rsi X ¡2 ro 1- P A CKAG E cc < NF (dB) h PG (dB) > DESCRIPTIO N TYPE RF amplifiers-mixer/oscillators 3 _E □ o_ 800 200 600 TO-72 6.5 800 175 550 TO-72


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    00U1CJ1CJ10 O-7211) npn 222 251bf "AGC Amplifier" AM "AGC Amplifier" AM FM radio AM/FM bf 233 BF222 agc amplifier F VHF amplifier PDF

    702 y TRANSISTOR

    Abstract: JE701 JE700 702 P TRANSISTOR je 701
    Contextual Info: r n r e n i maiml MJE700/701 /702/703 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 lc= -1.5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • C om plem ent to M JE 800/801/802/803 ABSOLUTE MAXIMUM RATINGS C haracteristic


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    MJE700/701 MJE700/701 MJE702/703 702 y TRANSISTOR JE701 JE700 702 P TRANSISTOR je 701 PDF

    2N2772

    Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
    Contextual Info: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT


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    2N1015, 2N1015 2N1015A 2N1016, 2N1016 2N1016A 2N3429 2N3429-32 MT-52 MT-33 2N2772 TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2N2226 2N1050C PDF

    BUF600

    Contextual Info: JR W -B R O W N BUF600/601 Or, Call Customer Servite al 1-800-548-6132 USA Only BUF600/601 OPERATIONAL AMPLIFIERS Q ADVANCE INFORMATION SU B JE C T TO CHANGE HIGH-SPEED BUFFER AMPLIFIER FEATURES APPLICATIONS • OUTSTANDING AC-PERFORMANCE • VIDEO BUFFER/LINE DRIVER


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    BUF600/601 360QV/ BUF600 PDF

    Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only i ADVANCED INFORMATION S U B JE C T TO CH ANCE FEATU R ES Q Wideband Voltage Feedback OPERATIONAL AMPLIFIER APPLICATIONS • GAIN-BANDWIDTH: 1.6GHz • COMMUNICATIONS • S T A B L E IN GAINS > 2 • MEDICAL IMAGING


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    40V/J1S -76dBc 10MHz OPA641 OPA64- 402ft OPA641 17313bS 002471b PDF

    2SA988

    Abstract: 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540
    Contextual Info: i s I Silicon Transistor # W-MM # f i : mm) it ffijfftigils, Ì É ì S l t x 4 v & 'y 'T , 50 mA i x-60# K 7 ï r f f l O L x \tm x $ t t o s b îœ , to mmmmvtifê.x'to ss hFE *>-?, 120 v V,CEO : - hFE (Ic = - 1.0 mA) : 500 T Y P . (Ta = 25 °C )


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    2SA988 SC-43B S24-S| 2SA988 2sa988 transistor A0222-6 1T0266 2SA9881 NEC 41-A 002 PA33 T108 T210 T540 PDF

    BA 5982

    Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X


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    NE856 av3000 NE85639R-T1 BA 5982 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1 PDF

    AC128 transistor

    Abstract: bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188 AC187
    Contextual Info: Transistors germanium low/medium power transistors Dwg. ref. O utline •b z -0 ?î book 1 parts 1 and 2 V CBO V V ceo (V) M axim um Ratings lCM IC(AV) (A ) (A) Ptot at 25PC (°C> <mW) Tj m in. at •c fT ty p . (m A i (MHz) 2.5 h FE max. Special Features


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    at25PC AC128 AC187 AC188 2N1303 2N1306 2N1307 2N1309 h--22-> crt6-25 AC128 transistor bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188 PDF

    Contextual Info: an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz


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    MA4T3243 MA4T324335 PDF

    200D-100

    Abstract: 200D100 IEBo-400mA two transistors power transistor bjt 1000 a 1000v Transistor bjt fuji bjt vebo10v
    Contextual Info: _ _ - _ 2-Pack BJT 2DI200D-100 '» A * I Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • High Voltage t 7 ' J “ 7h>f U > *f ¥ 4 KrtJSt Including Free Wheeling Diode • ASO Excellent Safe Operating Area • Insulated Type I A p p licatio n s


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    200D-100 E82988 C-200A 200D-100 200D100 IEBo-400mA two transistors power transistor bjt 1000 a 1000v Transistor bjt fuji bjt vebo10v PDF

    BCX33

    Abstract: BCX32 BCX31 BCX34 BFQ36 2N1711 Data Sheet BC337 BC338 BFX84 BFX85
    Contextual Info: Transistors N-P-N silicon low/medium power transistors book 1 parts 1 and 2 cont. Type No. V c □ O o> ^ Ï o M axim um Ratings Icm I cjavi vceo V ceo (V) (V ) (A) (A) hpE Ptot m in. max. at 25°C <°C) (mW) 50 45 1.0 0.5 150 625 100 30 25 150 730 Ti fT


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    BC337 BC338 BCX31 OT-25 BCX32 BCX33 BCX34 BFX84 BFX85 h--22-> BCX33 BCX32 BCX34 BFQ36 2N1711 Data Sheet BC338 BFX85 PDF

    nf016

    Abstract: MA4TF50 gs 069 0605
    Contextual Info: an A M P com pany General Purpose 0.5 |jm N-Type GaAs MESFET Transistors MA4TF50 Series V3.00 Case Styles Features • • • • • Low Noise Figure High Associated Gain High Maximum Available Gain Designed for Battery Operation Useful to Ku-Band Description


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    MA4TF50 MA4TF5005, MA4TF5000, MA4TF5000 MA4TF5005 nf016 gs 069 0605 PDF

    ST 80500 transistor

    Abstract: ST 80500 LB 11911 ST 9727 74200 MARKING AG1 NE687 ka 2201 323 IK 9094 cd 9094
    Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES_ • LOW NOISE: 1.3 dB AT 2.0 GHz 4 fr • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fT of 13 GHz 18 SO T 343 ST Y LE 19(3 PIN ULTRA S U P E R


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    NE687 OT-143) NE68718-T1 NE68719-T1 NE68730-T1 NE68733-T1 NE68739-T1 ST 80500 transistor ST 80500 LB 11911 ST 9727 74200 MARKING AG1 ka 2201 323 IK 9094 cd 9094 PDF

    JE800

    Abstract: JE702 mje800 JE700
    Contextual Info: f Z 7 SCS-THOMSON ^ 7 # fifflD æ m iC T «! S_G MJ E800/1 /2/3 MJE700/1/2/3 S-TH O M S O N 3GE ]> MEDIUM POWER DARLINGTONS D ESCRIPTIO N The MJE800, MJE801, MJE802 and MJE803 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are moun­


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    E800/1 MJE700/1/2/3 MJE800, MJE801, MJE802 MJE803 O-126 MJE700, MJE701, MJE702 JE800 JE702 mje800 JE700 PDF

    Contextual Info: MOTOROLA O rder this docum ent by MJE18206/D SEMICONDUCTOR TECHNICAL DATA M JE 18206 M JF18206 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS


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    MJE18206/D JF18206 MJE/MJF18206 221D-02 E69369 PDF

    Pa75ha

    Abstract: upa75 UPA75HA UPA75H 3773 P T108 T460 5551 transistor jsw15
    Contextual Info: NEC j í í t / V T jK ÎM 'ê r h =7 > > * 9 C om poun d Transistor J ¿¿PA75HA PN Px ¥ 9 'J n PNP Silicon Epitaxial C om pound T ransistor D ifferential A m p lifie r 4$ di:/F E A T U R E S O 1 c h i p t f i t T ' i , ^ tztb, l ' ' 7 > X l : { , | | L


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    uPA75HA Pa75ha upa75 UPA75H 3773 P T108 T460 5551 transistor jsw15 PDF

    t636

    Abstract: 557 sot143 T636 A S 223 858 015 636
    Contextual Info: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and


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    MA4T6365 MA4T6365 OT-143 MA4T636539 t636 557 sot143 T636 A S 223 858 015 636 PDF

    transistor bc557

    Abstract: transistor BC558 base collector emitter BC546 BC548 BC556 BC557 BC558 DS21
    Contextual Info: BC556 - BC558 VISHAY PNP EPITAXIAL PLANAR TRANSISTORS LITEMZI y POWER SEMICONDUCTOR Features Ideal for Switching and AF Amplifier Applications Divided into Current Gain subgroups Complementary NPN Types Available BC546 thru BC548 TO-92 Dim Min Max A 4.45


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    BC556 BC558 BC546 BC548) MIL-STD-202, BC557 BC558 transistor bc557 transistor BC558 base collector emitter BC548 DS21 PDF

    uPA77HA

    Abstract: upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460
    Contextual Info: NEC A. l i T / \ m .'g - h Com pound Transisitor ' i 7 ¿¿PA77HA PNP h = 7 > i> 7 ,5 U f c Jl& jg S & Jif liffl PNP Silicon Epitaxial Compound Transistor Differential Amplifier ^ 0 / P A C K A G E D IM ENSIONS Unit: mm ^ / F E A T U R E S 01 chip nm.'chhtztb, ^ r i 4 ( j v b e = 2 mv t y p . ) ^ c ,


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    uPA77HA K0958 K0985 upa77 Power amplifier transisitor ST460 Power Transisitor 100V 2A 251U EBMS FST460 PDF

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Contextual Info: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


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    -204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u PDF

    Contextual Info: Product Description SGA-5286 Stanford Microdevices’ SGA-5286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.


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    SGA-5286 SGA-5286 50-ohm DC-4000 EDS-100610 PDF

    transistor vergleichsliste

    Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
    Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 2: Siliziumtransistoren r a d io - t e le v is io n Transistorverglèich& liste T eil 2 : S iliziu in tra n sistoren TRA N SISTO R, V ER G LEICH S LIS T E Teil 2: Siliziumtransistoren DER D EU TSCH EN M IL IT Ä R V E R L A G


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    PDF

    Contextual Info: Product Description SGA-5486 Stanford Microdevices’ SGA-5486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.


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    SGA-5486 SGA-5486 50-ohm DC-2400 EDS-100612 PDF

    Contextual Info: Product Description SGA-6389 Stanford Microdevices’ SGA-6389 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.


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    SGA-6389 SGA-6389 50-ohm DC-3000 EDS-100620 PDF