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TAIYO YUDEN FSJCSRYH782MP1H6-AZRF DUPLEXER 745MHZ/782MHZ 9SMD |
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FSJCSRYH782MP1H6-AZ | Reel | 3,000 |
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FSJCSRYH782MP1H6-AZ | Reel | 14 Weeks | 3,000 |
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FSJCSRYH782MP1H6-AZ |
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Carlo Gavazzi Holding AG RJCSR1A60D30EPNOSsr, Din Rail Mount, 660Vac, 32Vdc, 30A; Contact Configuration:Spst; Load Current:30A; Operating Voltage Max:660Vac; Relay Mounting:Din Rail; Relay Terminals:Cage Clamp; Switching Mode:Zero Crossing; Operating Voltage Min:42Vac Rohs Compliant: Yes |Carlo Gavazzi RJCSR1A60D30EPNO |
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Carlo Gavazzi Holding AG RJCSR1A60D50EPPOSsr, Din Rail Mount, 660Vac, 32Vdc, 50A; Contact Configuration:Spst; Load Current:50A; Operating Voltage Max:660Vac; Relay Mounting:Din Rail; Relay Terminals:Cage Clamp; Switching Mode:Zero Crossing; Operating Voltage Min:42Vac Rohs Compliant: Yes |Carlo Gavazzi RJCSR1A60D50EPPO |
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Carlo Gavazzi Holding AG RJCSR1A60D50EPNOSsr, Din Rail Mount, 660Vac, 32Vdc, 50A; Contact Configuration:Spst; Load Current:50A; Operating Voltage Max:660Vac; Relay Mounting:Din Rail; Relay Terminals:Cage Clamp; Switching Mode:Zero Crossing; Operating Voltage Min:42Vac Rohs Compliant: Yes |Carlo Gavazzi RJCSR1A60D50EPNO |
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Carlo Gavazzi Holding AG RJCSR1A23D50EPNOSsr, Din Rail Mount, 265Vac, 32Vdc, 50A; Contact Configuration:Spst; Load Current:50A; Operating Voltage Max:265Vac; Relay Mounting:Din Rail; Relay Terminals:Cage Clamp; Switching Mode:Zero Crossing; Operating Voltage Min:24Vac Rohs Compliant: Yes |Carlo Gavazzi RJCSR1A23D50EPNO |
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JCSR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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STR 11006
Abstract: intel 8096 ADF70 SC11020 NYP196-18 DAR30 NMC9346N SC11054 A5 MCR 100-6 serial communication in 8096
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24201Q 0/SC11021/SC11022/SC11023/SC11074/SC11075 SC11024 RS-232 74LS245 SC11006, SC11054 SC11024, STR 11006 intel 8096 ADF70 SC11020 NYP196-18 DAR30 NMC9346N A5 MCR 100-6 serial communication in 8096 | |
Contextual Info: TOSHIBA- m TQTTSHfi 00BB307 7Dfi • T C 5 1 V 1 7 4 0 0 B S T -6 0 /7 0 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM cs Description T heTC51V17400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC51V17400BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar |
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00BB307 heTC51V17400BST TC51V17400BST 300mil) 002S3m | |
Contextual Info: m . i s MT4C16256/7/8/9 256K X 16 WIDE DRAM MICRON • ««ICOHOliCTOR MC WIDE DRAM 256K X 16 DRAM FAST-PAGE-MODE FEATURES • Industry-standard xl6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% pow er supply* |
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MT4C16256/7/8/9 512-cycle MT4C16257/9 MT4C16258/9 Tim93 MT4C162SS/7/I/9 | |
MT16CContextual Info: ». ADVANCE M IC R O N I MT16D T 464 4 MEG X 64 DRAM MODULE 4 MEG X 64 DRAM 5.0V FAST PAGE MODE FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single in-line package • High-performance CMOS silicon-gate process • Single +5V ±10% power supply |
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MT16D 168-pin, 200mW 048-cycle MT10O MT16C | |
MC68681 PROGRAMMING EXAMPLE
Abstract: MC68681 PROGRAMMING baud M68000 64 pin bje resistor M68000 MC68000 MC68681 IP2-16X
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MC68681 MC68681 M68000 MC68000 40-LEAD 44-LEAD MC68681 PROGRAMMING EXAMPLE MC68681 PROGRAMMING baud M68000 64 pin bje resistor IP2-16X | |
Contextual Info: •HYUNDAI H Y 5 2 1 6 2 5 7 S e r ie s 256K X 16-bit Video RAM with 2WE Introduction O verview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register. |
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16-bit 16bits 1VC02-00-MAY95 HY5216257 525mil 64pin 1VC02-00-MAY9S | |
MT3D19
Abstract: MT4C4001 30-pin SIMM nsi 60 jg
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30-pin 625mW 024-cycle 100ns MT3D19 MT4C4001 30-pin SIMM nsi 60 jg | |
Contextual Info: M IC R O N MT8C9025 1MEG x 9 DRAM DRAM MODULE NIBBLE MODE FEATURES PIN ASSIGNMENT Top View • In d u stry sta n d ard p in-out in a 30-pin single-in-line package • H igh perform ance CM OS silicon gate process • Single 5V±10% p o w er su p p ly • All inputs, o u tp u ts a n d clocks are fully TTL a n d |
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MT8C9025 30-pin 1575mW | |
AO417
Abstract: ao41
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080/mx- AO417 ao41 | |
Contextual Info: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register. |
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HY5216256 256Kx 16-bit 16bits 4b750à 1VC01-00-MAY95 525mil 64pin 4b750flà | |
Contextual Info: CRÛ MT4067 DRAM 64K X 4 DRAM DRAM PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard pinout, timing and functions • All inputs, outputs, and clocks are fully TTL compatible • Single +5V±10% power supply • Low power, 15mW standby; 150mW active, typical |
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MT4067 150mW 256-cycle 18-Pin | |
HJ 13002
Abstract: TB1231N 1231an
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TA1275Z TB1231AN TB1231 SDIP56-P-600-1 197TYP HJ 13002 TB1231N 1231an | |
db86082
Abstract: RBVMEM20 VMEM20 am3 socket pin diagram am3 SOCKET PIN LAYOUT 024C GAL16V8 application IEC821 50340
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Str14 D-86159 VMEM20, gg91110 DB86082 IRQ10 RBVMEM20 VMEM20 am3 socket pin diagram am3 SOCKET PIN LAYOUT 024C GAL16V8 application IEC821 50340 | |
MT8LD432
Abstract: MT16LD832 MT4LC4
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MT8LD432 MT16LD832 048-cy MTSLD432 MT16LD3J2 MT4LC4 | |
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Contextual Info: MICRO N T E C H N O L O G Y INC MICRON I m 5 5 E J> ¿Z. 1 MEG DRAM b ] i l l 5 * n 00047=11 744 • MRN 32, 2 MEG X x MT8D132 16 DRAM MODULE 1 MEG x 32, 2 MEG x 16 _ FAST PAGE MODE MT8D132 LOW POWER, EXTENDED REFRESH (MT8D132 L) M O D U LE m v i / u b l . |
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MT8D132 72-pin 800mW 024-cycle 128ms 12Sus MTBD132 | |
bt60
Abstract: siemens im 304 Q1050
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5116400BJ 5116400BT bt60 siemens im 304 Q1050 | |
siemens FCVPContextual Info: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 A d v a n c e d In fo rm a tio n • 2 0 9 7 152 w o rd s by 8 -b it o rg a n iz a tio n • S in g le + 5 V ± 10 % su p p ly • 0 to 70 C o p e ra tin g te m p e ra tu re • Low p o w e r d issip a tio n |
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5117800BSJ-50/-60/-70 siemens FCVP | |
Contextual Info: MICRON TECHNOLOGY INC SSE D m DQ0M2SÖ ^Qâ • MRN MT4C4256 L 256K X 4 DRAM fVIICIRON ORAM 256K X 4 DRAM LOW POWER, EXTENDED REFRESH o 30 > FEATURES • Industry standard x4 pinout, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process |
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MT4C4256 150mW 512-cycle 200jiA 20-Pin MT4C4256L | |
Icc75
Abstract: E523 MSM548262
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MSM548262 144-Word MSM548262 512-word 200jis Icc75 E523 | |
VG2618165BJ
Abstract: VG2618165 VM23218165 jcsr MAX3242 VM23218165B
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13218165B 23218165B 32-Bit VM13218165B VM23218165B VG2618165BB) VG2618165BJ VG2618165 VM23218165 jcsr MAX3242 | |
Contextual Info: MICRON TECHNOLOGY INC SSE D • b lllS ^ TECHNOLOGY, INC. DRAM 4 MEG X4 DRAM DRAM 3.3V FAST PAGE MODE FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single power supply: +3.3V ±10% |
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125mW 048-cycle 096-cycle 00043b7 | |
TB1231N
Abstract: 1231N
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TB1231N TB1231N TA1275Z 1231N | |
TB1231N
Abstract: HBL - 150 tb 1238n Capacitor x2, Y TB1238N PH 33 v T31238
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TB1238N TB1238N TA1275AZ TB1231N HBL - 150 tb 1238n Capacitor x2, Y PH 33 v T31238 | |
dec40Contextual Info: SMJ320MCM42A DUAL SMJ320C40 MULTICHIP MODULE _ SGMS055A - NOVEMBER 1994 - REVISED MARCH 1996 I * Performance - 80 MFLOP With 496-Megabyte/s Burst I/O Rate for 40-MHz Modules - 66 MFLOP With 409-Megabyte/s Burst I/O Rate for 33-MHz Modules - 128K x 32 Zero-Wait-State Local Memory |
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SMJ320MCM42A SMJ320C40 SGMS055A 496-Megabyte/s 40-MHz 409-Megabyte/s 33-MHz to512Kx32 MIL-l-38535 dec40 |