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    Bulgin RFSSMAA2JCEB

    CONN SSMA J FLNG MNT 2HOLE
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    DigiKey RFSSMAA2JCEB Bulk 50
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    Newark RFSSMAA2JCEB Bulk 50
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    • 100 $82.44
    • 1000 $80.80
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    Kyocera AVX Components CWR19JC106JCEB

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    DigiKey CWR19JC106JCEB Bulk 500
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    Newark CWR19JC106JCEB Bulk 25
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    Kyocera AVX Components CWR29JC106JCEB

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    DigiKey CWR29JC106JCEB Bulk 500
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    Kyocera AVX Components CWR29FB226JCEB

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    Newark CWR29FB226JCEB Bulk 25
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    Kyocera AVX Components CWR29NH105JCEB

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    JC EB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    75222

    Abstract: 2603 TMS2603 LSI 2603
    Contextual Info: T M S 2603 JC. TM S 2603 NC EBCDIC-TO-USASCII CODE CONVERTER > Z c > 30 < 9 >1 description The T M S 2603 JC/NC is a programmed TM S 2600 JC/NC ROM capable of converting 8-bit EBCDIC to standard U SASCII. Electrical and mechanical characteristics, interfacing, and timing are identical to those of the TM S 2600


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    TMS2600

    Abstract: TMS2600JC texas
    Contextual Info: MOS LSI T M S 2604 JC. T M S 2604 NC USASCII-TO-EBCDIC/SELECTRIC-TO-EBCDIC CODE CONVERTER description The T M S 2604 JC/NC is a programmed T M S 2600 JC/NC ROM capable of converting both U SA SCII and Selectric Line Code to EBCDIC. Electrical and mechanical characteristics, interfacing, and timing are identical to those of the


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    7S222 TMS2600 TMS2600JC texas PDF

    8096 MICROCONTROLLER ADDRESSING MODES

    Abstract: 270646 intel Automotive
    Contextual Info: in le l 809X JC/839X JC/879X JC ADVANCED 16-BIT MICROCONTROLLER WITH 8- OR 16-BIT EXTERNAL BUS Automotive —40°C to + 125°C Case Dedicated Baud Rate Generator 232 Bytes of On-Chip Register RAM High Speed I/O Subsystem 128 Byte External RAM On-Chip Full Duplex Serial Port


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    809XJC/839XJC/879XJC 16-BIT 10-Bit 52-Pin 68-Pin 8096 MICROCONTROLLER ADDRESSING MODES 270646 intel Automotive PDF

    TMS2600

    Abstract: TMS2603 7S222
    Contextual Info: TM S 2 60 3 JC. TM S 2 6 0 3 NC EBCDIC-TO-USASCII CODE CONVERTER JAN UARY, 1971 description The TMS 2603 JC /N C is a programmed TMS 2600 JC/NC ROM capable o f converting 8-b it EBCDIC to standard U S A S C II. E lectrical and mechanical characteristics, interfacing, and tim in g are identical to those o f the TIMS 2600


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    7S222 USASC11 TMS2600 TMS2603 7S222 PDF

    Contextual Info: MOS LSI T M S 2604 JC. T M S 2604 NC USASCII-TO-EBCDIC/SELECTRIC-TO-EBCDIC CODE CONVERTER > z c > 3 < description The T M S 2604 JC/NC is a programmed T M S 2600 JC/NC R O M capable of converting both U S A S C II and Selectric Line Code to EB C D IC . Electrical and mechanical characteristics, interfacing, and timing are identical to those of the


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    PDF

    Contextual Info: MOS LSI T M S 2603 JC. T M S 2603 NC EBCDIC-TO-USASCII CODE CONVERTER > z c > 3> -< description The T M S 2603 JC /N C is a programmed T M S 2600 JC /N C R O M capable of converting 8-bit E B C D IC to standard U S A S C II. Electrical and mechanical characteristics, interfacing, and timing are identical to those of the T M S 2600


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    marking JC

    Abstract: BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23
    Contextual Info: SEMICONDUCTOR BAV23S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking JC 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC BAV23S - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    BAV23S OT-23 marking JC BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23 PDF

    EK42

    Abstract: d338aa
    Contextual Info: ru{{p s6p xtprqsqt 0z+v5 1.x*z2 x}v0vx2z0~12~x1 >aW^Zbh hZadZfVhifZ < MVhZY jc`hV\Z < MVhZY XiffZbh < Ebgi`Vh^cb jc`hV\Z +H^b0, < /62 hc 92 522Q>? 34>DdZf dc`ZE 7222Q>? KfchZXh^cb YZ\fZZ @EI62272 < EK42 NcX_Zh aVhZf^V` < K>88-CB Q2 +PG, ?cbhVXhg gdf^b\ aVhZf^V` <


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    7222Q> EI62272 88-CB LNb807/203 A475592 208Ia DB337B FLS/337B, 3709aa DB363BD EK42 d338aa PDF

    transistor s55

    Abstract: EK42
    Contextual Info: sv|q t7q yvqsrtru 1{,w6 2/y+{3 y~w1wy3{1*23*y2 >aW^Zbh hZadZfVhifZ < /62 MVhZY jc`hV\Z< 472Q>? hc 92 MVhZY XiffZbh < Ebgi`Vh^cb jc`hV\Z +H^b0, < 32> +dZf dc`Z, 7222Q>? KfchZXh^cb YZ\fZZ @EI62272 < EK42 NcX_Zh aVhZf^V` < K>88-CB Q2 +PG, ?cbhVXhg gdf^b\ aVhZf^V` <


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    7222Q> EI62272 88-CB LNb807/203 208Ia DB337B FLS/337B, 3709aa DB363BD 4208aa transistor s55 EK42 PDF

    KRA723E

    Contextual Info: SEMICONDUCTOR KRA723E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking JC 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC KRA723E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.


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    KRA723E KRA723E PDF

    marking JC

    Abstract: KRA723U
    Contextual Info: SEMICONDUCTOR KRA723U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking JC 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC KRA723U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.


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    KRA723U marking JC KRA723U PDF

    7358

    Abstract: EK42
    Contextual Info: vy*t w:t |wtvuwux 4~/z9 52|.~6 |,z4z|6~4-56-|5 >aW^Zbh hZadZfVhifZ < /62 MVhZY jc`hV\Z < 522Q>? hc 92 MVhZY XiffZbh < 34>pdZf dc`Zq Ebgi`Vh^cb jc`hV\Z +H^b0, < 7222Q>? KfchZXh^cb YZ\fZZ @EI62272 < EK42 NcX_Zh aVhZf^V` < B^`Z Ic0<A475592 K>88-CB Q2 +PG, ?cbhVXhg gdf^b\ aVhZf^V` <


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    7222Q> EI62272 88-CB LNb807/203 208Ia A475592 DB337B FLS/337B, 3709aa DB363BD 7358 EK42 PDF

    1D SOT 23-6

    Abstract: MMBTA06 MMBTA42 MMBTA43 NZT6714 NZT6715 NZT6717 PZTA06 PZTA42
    Contextual Info: This Surface Mount Transistors Material tr Copyrighted □ □ Ln a t-* t-1 Ui Discrete POWER & Signal Technologies Na t i o n a I f i Semiconductor" Surface Mount Transistors a NPN Medium Power JC a JC -0 _D By ai a -i Device No. SOT-23 Mark Case Style


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    OT-23 MMBTA06 O-236 PZTA06 O-261 NZT6714 NZT6715 NZT6717 1D SOT 23-6 MMBTA06 MMBTA42 MMBTA43 PZTA42 PDF

    Contextual Info: Super Fast Recovery Diode Diode Module mtm OUTLINE D 1 2 0 LC 40 400V 120A Feature •* a a u m • High lo Rating • trr=100ns • trr= 100ns • 0 jc ö V J '£ l/' • Small ö jc Main Use • Sem iconductor Process M achine • High power source • FA


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    100ns PDF

    S60SC6MT

    Abstract: W116 diode marking aj
    Contextual Info: Schottky Barrier Diode Twin Diode S60SC6MT • f tt g H O UTLINE Package ' MTO-3PT U n it ; m m W e ig h t 5.2 k T y p 60V 60A Feature • Tj=150lC Tj=150°C • 6 Small 0 jc High lo Rating jc ö V J \ £ li 'S 60SC6MT ~ N-H- Polarity ÎR T 7 ) Main Use


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    S60SC6MT S60SC6MT J533-1 W116 diode marking aj PDF

    S20LC30

    Contextual Info: Super Fast Recovery Diode Twin Diode M im S20LC30 O U T L IN E Unit ! mm Package : M TO -3P W eight 6.1g T yp 300V 20A : Feature •g y -rx • trr=30ns • 9 jc ö V J \£ U • Low Noise • trr=30ns • Small 8 jc • ® fl • Switching Regulator • Home Appliance, Office Automation


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    S20LC30 S20LC30 PDF

    Contextual Info: TMS 340 9 JC. NC; TMS 3417 JC, NC QUADRUPLE 80-, 64-BIT DYNAMIC SHIFT REGISTERS B U LLE T IN NO . D L-3 7B 123M R E V IS E D NOVEMBER 1977 is • 10 -k H i to B'MHz Operation % Dynamic Configuration • Singla TTL-Com patibla Clock • In p u u and Output» Fu lly TTL-Compatibla


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    64-BIT 16-PIN PDF

    Y7G3

    Abstract: ne 555E 1a10aa Z441 z523 d6876 mjop d266c kD 242
    Contextual Info: 2M 9 9  62$2/ /#/ j44 56789:6;68<=4874klm j44 nbB]ogapme j44 >JC:<=4G8<=oB8B=C5@7Q j44 dbHbbbHbbb48G=7@5J8C>4<J?=45JB= j44 qr`s4>=@<JC: j44 5=BG=7@597=47@C:=t <8F45=BGt4;abocddnue 6J:645=BGt4;abocd`bue  ! "#$%!&'$ $!)*


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    47klm 4J65BG 6K6777t Y7G3 ne 555E 1a10aa Z441 z523 d6876 mjop d266c kD 242 PDF

    Contextual Info: Darlington Transistors Darlington Power Transistors Three Terminal Type "i ectrica Characteristics V be ft ton VcE 6 jc Absolute Maximum Ratings Type No. 2SB1282 2SB1283 2SB1284 2SD1793 2SD1026 2SD1789 2SD1023 2SD1792 2SD1025 2SD1794 2SD1027 2SD2196 2SD1795


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    O-220 2SB1282 2SB12 ITO-220 PDF

    Contextual Info: High Voltage-High Speed Switching Transistors HFX series TO-220 ITO-220 Bipolar transistors NPN Electrical Characteristics Absolute Maximum Ratings VcEO Type No. VcBO VCEO V ebo lc Ib Pt Tstg Tj (sus) (min) [V] [V] [V] [A] [A] [W ] PC] [°C] [V] V be 6 jc


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    ITO-220 O-220 ITO-220 2SC4230 Fig82-3 FTO-220 PDF

    LG VARIABLE FREQUENCY DRIVE is3

    Abstract: ADZ8
    Contextual Info: 80960JS/JC 3.3 V Microprocessor Advance Information Datasheet Product Features ga Pin/Code Compatible with all 80960Jx Processors a High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 80960JS Ix the Bus Clock


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    80960JS/JC 80960Jx 80960JS 80960JC 32-Bit 80980JS/JC LG VARIABLE FREQUENCY DRIVE is3 ADZ8 PDF

    Contextual Info: 80960JS/JC 3.3 V Microprocessor Advance Information Datasheet Product Features • Pin/Code Compatible with all 80960Jx Processors ■ High-Performance Embedded Architecture — One Instruction/Clock Execution — Core Clock Rate is: 80960JS lx the Bus Clock


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    80960JS/JC 80960Jx 80960JS 80960JC 32-Bit PDF

    Transistor mps 2112

    Abstract: MPS 2112 UZU2122 nais uzu2202 UZU2202 nais sensor UZU20205 druck EN50032-2 UZU2001
    Contextual Info: Drucksensoren mit hoher Funktionalität und digitaler LED Anzeige I I K JC m W v l 143k IW EINE NEUE GENERATION MULTIFUNKTIONALER HOCHPRÄZISER MIKROPROZESSORGESTEUERTER DIGITALMANOMETER Hohe Wiederholgenauig keit und Auflösung bei kurzen Ansprechzeiten Kurze Ansprechzeit; unter 2,5ms


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    UZU811 Transistor mps 2112 MPS 2112 UZU2122 nais uzu2202 UZU2202 nais sensor UZU20205 druck EN50032-2 UZU2001 PDF

    FTG 1087 S

    Abstract: AST 3P, Transmitter
    Contextual Info: 8XC152JA/JB/JC/JD UNIVERSAL COMMUNICATION CONTROLLER 8-BIT MICROCONTROLLER • 8K Factory Mask Programmable ROM Available ■ Superset of 80C51 Architecture ■ 64KB Data Memory Addressing ■ Multi-Protocol Serial Communication I/O Port 2.048 Mbps/2.4 Mbps Max


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    8XC152JA/JB/JC/JD 80C51 80C152/ 83C152 80C152JC, 83C152JC, 80C152JD FTG 1087 S AST 3P, Transmitter PDF