JANSR2N727 Search Results

Contextual Info: JANSR2N7272 Semiconductor Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

IRHM8450

Abstract: 2N7270 IRHM7450 JANSH2N7270 JANSR2N7270
Contextual Info: PD - 90673A IRHM7450 IRHM8450 JANSR2N7270 JANSH2N7270 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

Contextual Info: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.700Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.180Ω The Fairchild Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings

Rad Hard in Fairchild for MOSFET

Abstract: mosfet 250V 4A 1E14 2E12 FRL234R4 JANSR2N7278 MOSFET A3
Contextual Info: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 78 /Subject (4A, 250V, 0.700 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.700

Contextual Info: PD - 90673B IRHM7450 JANSR2N7270 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7450 IRHM3450 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)

Contextual Info: JANSR2N7275 S m a Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Description Features • 5A, 200V, r D S O N The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

Contextual Info: 33 JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 4A, 250V, rDS ON = 0.700Q The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings

1E14

Abstract: 2E12 FRL130R4 JANSR2N7272 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

1E14

Abstract: 2E12 FRL130R4 JANSR2N7272
Contextual Info: JANSR2N7272 Formerly FRL130R4 8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 8A, 100V, rDS ON = 0.180Ω The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

Contextual Info: 3 HÄ« » JANSR2N7272 Formerly FRL130R4 Features Description • 8A, 100V, Tqs o N) = 0.18011 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings

JANSR2N7270

Abstract: IRHM8450 IRHM7450 JANSF2N7270
Contextual Info: PD - 90673B IRHM7450 JANSR2N7270 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-254AA REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number IRHM7450 IRHM3450 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on)

1E14

Abstract: 2E12 FRL234R4 JANSR2N7278 Rad hard MOSFETS in Harris
Contextual Info: JANSR2N7278 S E M I C O N D U C T O R Formerly Available As FRL234R4 Radiation Hardened, N-Channel Power MOSFETs April 1997 Features Description • 4A, 250V, rDS ON = 0.700Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

7404

Contextual Info: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F

Contextual Info: JANSR2N7272 Œ Formerly Available As FRL130R4 Radiation Hardened, N-Channel Power MOSFETs April 1997 Features Description • 8A, 100V, ros ON = 0.180S2 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

JANSR2N7270U

Abstract: JANSF2N7270U
Contextual Info: PD - 90819B IRHN7450 JANSR2N7270U 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN7450 100K Rads (Si) IRHN3450 300K Rads (Si) IRHN4450

1E14

Abstract: 2E12 FRL234R4 JANSR2N7278
Contextual Info: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.700Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

IRHN7450

Abstract: IRHN8450 JANSH2N7270U JANSR2N7270U 2N7270U
Contextual Info: PD - 90819A IRHN7450 IRHN8450 JANSR2N7270U JANSH2N7270U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

1E14

Abstract: 2E12 FRL230R4 JANSR2N7275 Rad hard MOSFETS in Harris
Contextual Info: JANSR2N7275 S E M I C O N D U C T O R Formerly Available As FRL230R4 Radiation Hardened, N-Channel Power MOSFETs May 1997 Features Description • 5A, 200V, rDS ON = 0.500Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

180I2

Abstract: 2E12 FRL130R4 JANSR2N7272
Contextual Info: JANSR2N7272 S Formerly Available As FRL130R4 Radiation Hardened, N-Channel Power MOSFETs April 1997 Features Description • 8A, 100V, ro s O N = 0.180i2 The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

1334 diode

Abstract: 1E14 2E12 FRL130R4 JANSR2N7272
Contextual Info: JANSR2N7272 S E M I C O N D U C T O R Formerly Available As FRL130R4 Radiation Hardened, N-Channel Power MOSFETs June 1997 Features Description • 8A, 100V, rDS ON = 0.180Ω The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both

FRL230

Abstract: 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230
Contextual Info: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

smd 233

Abstract: IRHN7450 IRHN8450 JANSR2N7270U
Contextual Info: PD - 90819B IRHN7450 JANSR2N7270U 500V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 REF: MIL-PRF-19500/603 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN7450 100K Rads (Si) IRHN3450 300K Rads (Si) IRHN4450