JAN96 Search Results

16875

Abstract: ds1232 P-16852 16876
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1232 Jan-96 9547 C1 ANAM, K. DN537172ABA 3.0µ OX/NI 16 SOIC STRESS/JOB NO. Preconditioning P/C : HTC Vapor Phase P-16818 READPOINT (Sample Size/No. of Fails)

dk52

Abstract: P-15782 DK53 P15890 P-16795 148259 p16038 P-17201 C19517 P-15837
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320

transistor 16870

Abstract: transistor HR DS1230AB P-16870 hr/transistor 16870
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230AB Jan-96 9538 H DALLAS DA067510AAA N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-16812 48 Hr

TIP31

Abstract: TIP31A TIP31B TIP32 TIP32B
Contextual Info: TIP31,2 CRO SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. TPifdSISIDR Nil. MMtlrCri! ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

Contextual Info: 7 DRAWING MADE 6 5 3 4 2 1 IN T H IR D A NG L E P R O J E C T I O N T H I S DRAWING IS UNPUBLISHED. COPYRIGHT 19 RELEASED AMP BY INCORPORATED. ALL PROD ,19 FOR P U B L I C A T I O N INTERNATIONAL RIGHT5 L OC 5087 RESERVED. DIST DF CODE REVISIONS FO p F

Contextual Info: RMP TRENDS CUMULATIVE DATA DS1000 125°C, 7.0 V 0.40% 10 8 6 0.20% 4 HV. Life, 1000 hrs 0.10% 2 Inf. Life, 48 hrs 0.00% May-95 HV/L Fits 60% Cf I/L % Def 90% Cf 0.30% Jul-95 Sep-95 Feb-96 May-96 Aug-96 CUMULATIVE DATA DS1232 125°C, 7.0 V 0.40% HV. Life, 1000 hrs

dk52

Abstract: P-16890 17872 p1908 P1875 P-18701
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 DS80C320 MONITOR DATE JOB NO. Mar-96 Sep-96

16889

Abstract: B/TDA 16840
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2107A Jan-96 9552 A6 CARSEM DM510561AAA 1.2µ NITRIDE 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase

p15890

Abstract: P-16044 CARSEM
Contextual Info: RELIABILITY MONITOR STRESS: Infant / High Voltage Life 125°C, 7.0 V. 6.0 V. DS1302 SUMMARY TYPE: PRODUCT DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS80C320 DS80C320 DS80C320

BD5013

Contextual Info: DRAWING T H IS MADE DRAWING IN IS T HI RD ANGLE U N P U B L IS H E D . COPYRIGHT PROJECTION □ 1ST RELEASED FOR PUBLICATION BY AMP INCORPORATED. R E V IS IO N S BD 48 ALL INTERNATIONAL RIGHTS RESERVED. DESCRIPTION RED RA WN ON REV PER ECN OBS -A OBS -3

Contextual Info: RMP TRENDS CUMULATIVE DATA DS232A 125°C, 7.0 V 0.40% 15 HV. Life, 1000 hrs 12 Inf. Life, 48 hrs 9 0.20% 6 0.10% Start Dec 95 Data Limited 3 0.00% Jun-96 HV/L Fits 60% Cf I/L % Def 90% Cf 0.30% Sep-96 Dec-96 Mar-97 Jun-97 Sep-97 CUMULATIVE DATA DS1000 125°C, 7.0 V

Contextual Info: RMP TRENDS CUMULATIVE DATA DS232A 125°C, 7.0 V 1.20% 32 0.90% 24 Inf. Life, 48 hrs 0.60% 0.30% 16 Start Dec 95 Data Limited HV/L Fits 60% Cf I/L % Def 90% Cf HV. Life, 1000 hrs 8 0.00% Dec-95 Mar-96 Jun-96 Sep-96 Dec-96 CUMULATIVE DATA DS1000 125°C, 7.0 V

Contextual Info: RMP TRENDS CUMULATIVE DATA DS232A 125°C, 7.0 V 1.20% 24 Start Dec 95 Data Limited HV. Life, 1000 hrs Inf. Life, 48 hrs 0.60% 16 0.30% 8 0.00% Dec-95 Mar-96 Jun-96 Sep-96 Dec-96 HV/L Fits 60% Cf I/L % Def 90% Cf 0.90% 32 Mar-97 CUMULATIVE DATA DS1000 125°C, 7.0 V

16880

Abstract: P16905
Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1267 Jan-96 9544 A1 ANAM, K. DN518301AAN 1.2µ OX/NI 16 SOIC STRESS/JOB NO. Preconditioning P/C : 85°C/85% RH, 168 hours HTC Vapor Phase, 3 Passes

p15890

Abstract: P-16100 P-15830 P-15890 p1565 DK53 dk52 C19517 P1537 P-16400
Contextual Info: RELIABILITY MONITOR SUMMARY DATA STRESS: PRODUCT DS21S07A DS21S07A DS21S07A DS21S07A DS21S07A DS80C320 DS1302 DS1302 DS1302 DS1302 DS1302 DS1302 DS21S07A DS80320 DS80320 Burn-in 125°C, 7.0 V. 6.0 V. DS1302 MONITOR DATE JOB NO. Mar-95 May-95 Jul-95 Sep-95

TIP31

Abstract: 103 MI tip312 TIP31A TIP32 TIP32A
Contextual Info: TIP31,2 SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2165 Jan-96 9535 B1 HYUNDAI DL523566AAC 2.0µ OXIDE 24 PDIP STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning: T/C: -55°C to +125°C, 10~

Contextual Info: TIP31,2 CRO SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. TPifdSISIDR Nil. MMtlrCri! ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage

HD-20

Abstract: MIL-T-10727
Contextual Info: 7 DRAWING MADE THIS IN THIRD DRAWING ANGLE 4 P RO JE C TI ON IS UNPUBLISHED. RELEASED FOR P U B L I C A T I O N ,19 COPYRIGHT 19 BY AMP INCORPORATED, HARR ISBURG, P A . ALL INTERNATIONAL RIGHTS RESERVED. AMP PRODUCTS MAY BE COVERED BY U . S . AND FOREIGN PATENTS AND/OR PATENTS PENDING,

te 2395

Abstract: 7483 748367-2
Contextual Info: D R A W I N G MA DE THIS DRAWING IN T H IR D A N G LE P R O J E C T I O N IS UNPUBLISHED. RELEASED FOR P U B L I C A T I O N ,19 COPYRIGHT 19 BY AMP I NCORPORATED, HARR ISBURG, P A . ALL INTERNATIONAL RIGHTS RESERVED. AMP PRODUCTS MAY BE COVERED BY U.S. AND FOREIGN PATENTS AND/OR PATENTS PENDING,

Contextual Info: •«HYUNDAI HYM572A214A F-Series Unbuffered 2M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM572A214A is a 2M x 72-bit EDO m ode CMOS DRAM m odule consisting of nine HY5117804B in 28.28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 mF and 0.01 mF

Contextual Info: « flY im P A i • HYM5V72A404A K-Series 4Mx72-blt CMOS DRAM MODULE Unbuffered with EXTENDED DATA OUT DESCRIPTION The HYM5V72A404A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51V16404A in 24/26 pin SOJ or TSOPII and one 2048 bit EEPROM on a 168 pin glass-epoxy printed

52CAE

Abstract: HY5117804
Contextual Info: •«HYUNDAI HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A414A is a 4M x 72-bit EDO m ode CMOS DRAM m odule consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF

Contextual Info: 3 Ï COPYRIGHT 1996 AMP INCORPORATED. a l l r i g h t s IOC ZÎ-No y -95 R ELEASED FOR PUBLICATIO N BT TO S P L I C E ANY T H R E E W I R E S 0 . 5 D I A . A L U M. A L L O Y . N O M I N A L S O L I D C O N D U C T O R , OR 0 . 4 TO 0 . 9 D I A . COPPER NOMINAL S O L I D CONDUCTORS.