JA TRANSISTOR Search Results

a/TO111

Contextual Info: Microsemi NPN Transistors Part N um ber JA N S2N3997 JA N S2N3998 JA N S2N3999 JA N TX2N 2880 JA N TX2N 3749 JA N TX2N 3996 JA N TX2N 3997 JAN TX2N 3998 JAN TX2N 3999 JA N TXV2N 2880 JA N TXV2N 3749 JA N TXV2N 3996 JA N TXV2N 3997 JA N TXV2N 3998 JA N TXV2N 3999

The 8002 Amplifier IC

Abstract: 8002 Amplifier IC t4 and 0570 2N3741 New England Semiconductor 2n3741 IC 8002 2N3740 2N3766 2N3741A 2N3767
Contextual Info: 2N3740* 2N3741* 2N3741A *also available as JA N , JA N TX , JA NTXV MEDIUM-POWER PNP TRANSISTORS .ideal for use as drivers, switches and medium-power amplifier application. These devices feature: • • • • • POWER TRANSISTOR PNP SILICON 60 - 80 VOLTS

0718A

Abstract: HS4401 JANTX2N2920 2N0718 19835
Contextual Info: Microsemi NPN Transistors Part N um ber M icrosem i Division Watertown Watertown Watertown Watertown JA N 2N0910 Watertown JAN 2N 0910S Watertown JAN2N0911 Watertown JAN 2N 0911S Watertown JA N 2N0912 Watertown JAN 2N 0912S Watertown JA N TX2N 0910 Watertown

2N6287 JANTX

Abstract: 2N6282 amplifier transistor 2N6284 2N6283 2N6284 2N6285 2N6286 2N6287 2N6282 NEW ENGLAND SEMICONDUCTOR 2N62B
Contextual Info: NPN PNP 2N6282 2N6285* 2N6283* 2N6286* 2N6284* 2N6287* *also a v a ila b le as JA N , JA N T X , JA N T X V DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose am plifier and low frequency switching applications. Collector-Em itter Sustaining Voltage —

Contextual Info: TABLE OF CONTENTS NUMERICAL JA N /JA N T X V TYPES AVAILABLE. 6 2 AMPS N P N .7

Contextual Info: SftOPTEK Product Bulletin JA N TX, JA N TX V , 2N5796U Septem ber 1996 Surface Mount Dual PNP Transistor Type JANTX, JANTXV, 2N5796U • • • Ceramic surface mount package Hermetically sealed Miniature package minimizes circuit board area required • Electrical performance similar to dual

JANTXV2N2222AUA

Abstract: transistor s71 2N2222AUA
Contextual Info: 0 . OPTEK Product Bulletin JA N TX, JA N TXV, 2N 2222A U A Sep tem ber 1996 Surface Mount NPN General Purpose Transistor Types JANTX, JANTXV, 2N2222AUA Features • Ceramic surface mount package • Small package to minimize circuit board area • Hermetically sealed

2N7336

Abstract: JANTXV2N7336 tp 26c 436D IRFG6110 JANTX2N7336 irfgg110
Contextual Info: Data Sheet No. PD-9.436D I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG6110 SIVI7336 JA N TX 2N 7336 JA N TX V S N 7336 COMBINATION N AND P CHANNEL [S EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: MIL-S-1S500/59S]

2N5664

Abstract: cc 3053
Contextual Info: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN JANTX, JANTX, JANTX, JANTX, FEATURES • Meets MIL-S-19500/455 • Collector-Base Voltage: up to 400V • D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JA N , JA N T X ,

transistor a13

Abstract: A13 transistor
Contextual Info: ALLEGRO MICROSYSTEMS INC T3]> ] • 0504330 G0G3b37 4 P R O CESS A JA T -^ l "O I Process AJA NPN Small-Signal Transistor Process A JA is a double-diffused epitaxial silicon transistor designed for use in medium-power, general-purpose amplifiers and as a switch for line volt­

Contextual Info: 19-0094. R e v 6, 7/95 M icroprocessor Supervisory Circuits _ A pplications _ Features ♦ 200ms Power-OK/Reset Timeout Period ♦ 1 |jA Standby Current, 30|jA Operating Current ♦ On-Board Gating of Chip-Enable Signals,

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB

2N2222A JANTX

Abstract: 2N2222A JANTXV Transistor 2N2222A 2N2222A 2N6989U JANTX2N6989U jantxv2n6989u
Contextual Info: @ .Q P IE K Product Bulletin JAN TX, JAN TXV , 2N6989U January 1996 Surface Mount Quad NPN Transistor Type JA N TX , JA N TX V, 2N6989U Features Absolute Maximum Ratings T a = 2 5 ° C u n le s s o th e rw is e noted • Ceram ic surface mount package • Herm etically sealed

2N7334

Abstract: IRFG110 JANTXV2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRF6110 8N 7334 JA N T X 2N 7334 JA N T X V 2N 7334 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: M IL-S -19500/5S7]

HEXFETs FETs

Abstract: ALPS 102 lg motor DD ior 050a
Contextual Info: Data Sheet No. PD-9.397E INTERNATIONAL RECTIFIER IRFG911Q S N 7335 JA N T X 2N 7335 JA N T X V 2N 7335 HEXFET TRANSISTORS 4PCHANNEL POWER MOSFETs 14 LEAD DU AL-IN-LINE Q UAD C ER A M IC S ID E BRAZED PACKAGE [REF: MIL-S-19500/599] Product Summary -100 Volt, 1.4 Ohm (P-Channel)

2N3866A

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr m o% #f 1 l 1 1 I c I ^88888 Data Sheet No. 2N3866A $ id L SEMICONDUCTORS Type 2N3866A G eneric Part Num ber: 2N3866A Geometry 1007 Polarity NPN Qual Level: JA N -JA N S

LQH3C470

Abstract: BD914 Sanyo OS-CON capacitors LT1316CMS8 LT1316CS8
Contextual Info: r r u u m TECHNOLOGY _ LT1316 Micropower DC/DC Converter with Programmable Peak Current Limit FCRTURCS D C S C R IP TIO n • Precise Control of Peak Switch Current ■ Quiescent Current: 33|jA in Active Mode 3|jA in Shutdown Mode ■ Low-Battery Detector Active in Shutdown

XYLENE

Abstract: LR26550 Matsushita Relay Technical Information, nr smd rectifier bridge 1.5A 4328A dc welding machine schematic pcb diagram
Contextual Info: JA 1 HORSE-POWER COMPACT POWER RELAYS 30.1 1.185 30.1 1.185 34.7 1.366 TMP type UL File No.: E43028 CSA File No.: LR26550 34.7 1.366 28.5 1.122 JA-RELAYS 28.5 1.122 TM type mm inch • High switching capacity — 55 A inrush, 15 A steady state inductive load 1 Form A

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 4 o% #f 1 l $ I c I ^88888 id L SEMICONDUCTORS Type 2N5154 G eneric Part Number: 2N5154 Geometry 9201 Polarity NPN Qual Level: JA N -JA N S

Contextual Info: ¿888888888 |pM iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 3 L m o% #f 1 l $ 1 1 Ic I ^88888 id L SEMICONDUCTORS Type 2N5153L G eneric Part Num ber: 2N5153L Geometry 9702 Polarity PNP Qual Level: JA N -JA N S

Contextual Info: ¿888888888 p |M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr Da ta S he e t No. 2 N 2 8 5 7 U B m o% #f 1 l $ 1 1 Ic I ^88888 id L SEMICONDUCTORS Type 2N2857UB G eneric Part Num ber: 2N2857 Geometry 0011 Polarity NPN Qual Level: JA N -JA N S

LTC1154

Contextual Info: 11 m i / r u ^Æ Êm F LTC1154 m TECHNOLOGY High-Side M icro po w e r MOSFET Driver F€ R TU R € S D € S C R IP T IO fl • Fully Enhances N-Channel Power MOSFETs ■ 8|jA Iq Standby Current ■ 85|jA Iq ON Current ■ No External Charge Pump Capacitors

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 2 L o% #f 1 l $ I c I ^88888 id L SEMICONDUCTORS Type 2N5152L G eneric Part Num ber: 2N5152L Geometry 9201 Polarity NPN Qual Level: JA N -JA N S

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 1 o% #f 1 l $ I c I ^88888 id L SEMICONDUCTORS Type 2N5151 G eneric Part Num ber: 2N5151 Geometry 9702 Polarity PNP Qual Level: JA N -JA N S