JA TRANSISTOR Search Results

a/TO111

Contextual Info: Microsemi NPN Transistors Part N um ber JA N S2N3997 JA N S2N3998 JA N S2N3999 JA N TX2N 2880 JA N TX2N 3749 JA N TX2N 3996 JA N TX2N 3997 JAN TX2N 3998 JAN TX2N 3999 JA N TXV2N 2880 JA N TXV2N 3749 JA N TXV2N 3996 JA N TXV2N 3997 JA N TXV2N 3998 JA N TXV2N 3999

The 8002 Amplifier IC

Abstract: 8002 Amplifier IC t4 and 0570 2N3741 New England Semiconductor 2n3741 IC 8002 2N3740 2N3766 2N3741A 2N3767
Contextual Info: 2N3740* 2N3741* 2N3741A *also available as JA N , JA N TX , JA NTXV MEDIUM-POWER PNP TRANSISTORS .ideal for use as drivers, switches and medium-power amplifier application. These devices feature: • • • • • POWER TRANSISTOR PNP SILICON 60 - 80 VOLTS

JANTXV2N2222AUA

Abstract: transistor s71 2N2222AUA
Contextual Info: 0 . OPTEK Product Bulletin JA N TX, JA N TXV, 2N 2222A U A Sep tem ber 1996 Surface Mount NPN General Purpose Transistor Types JANTX, JANTXV, 2N2222AUA Features • Ceramic surface mount package • Small package to minimize circuit board area • Hermetically sealed

2N7336

Abstract: JANTXV2N7336 tp 26c 436D IRFG6110 JANTX2N7336 irfgg110
Contextual Info: Data Sheet No. PD-9.436D I«R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG6110 SIVI7336 JA N TX 2N 7336 JA N TX V S N 7336 COMBINATION N AND P CHANNEL [S EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: MIL-S-1S500/59S]

2N5664

Abstract: cc 3053
Contextual Info: POWER TRANSISTORS JAN, JAN, JAN, JAN, 5 Amp, 300V, Planar NPN JANTX, JANTX, JANTX, JANTX, FEATURES • Meets MIL-S-19500/455 • Collector-Base Voltage: up to 400V • D.C. Collector Current: 5A • Peak Collector Current: 10A • Fast Switching JA N , JA N T X ,

Contextual Info: 19-0094. R e v 6, 7/95 M icroprocessor Supervisory Circuits _ A pplications _ Features ♦ 200ms Power-OK/Reset Timeout Period ♦ 1 |jA Standby Current, 30|jA Operating Current ♦ On-Board Gating of Chip-Enable Signals,

2N2222A JANTX

Abstract: 2N2222A JANTXV Transistor 2N2222A 2N2222A 2N6989U JANTX2N6989U jantxv2n6989u
Contextual Info: @ .Q P IE K Product Bulletin JAN TX, JAN TXV , 2N6989U January 1996 Surface Mount Quad NPN Transistor Type JA N TX , JA N TX V, 2N6989U Features Absolute Maximum Ratings T a = 2 5 ° C u n le s s o th e rw is e noted • Ceram ic surface mount package • Herm etically sealed

2N7334

Abstract: IRFG110 JANTXV2N7334
Contextual Info: Data Sheet No. PD-9.396E INTERNATIONAL RECTIFIER I O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRF6110 8N 7334 JA N T X 2N 7334 JA N T X V 2N 7334 4 N-CHANNEL POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: M IL-S -19500/5S7]

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 4 o% #f 1 l $ I c I ^88888 id L SEMICONDUCTORS Type 2N5154 G eneric Part Number: 2N5154 Geometry 9201 Polarity NPN Qual Level: JA N -JA N S

LTC1154

Contextual Info: 11 m i / r u ^Æ Êm F LTC1154 m TECHNOLOGY High-Side M icro po w e r MOSFET Driver F€ R TU R € S D € S C R IP T IO fl • Fully Enhances N-Channel Power MOSFETs ■ 8|jA Iq Standby Current ■ 85|jA Iq ON Current ■ No External Charge Pump Capacitors

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 2 L o% #f 1 l $ I c I ^88888 id L SEMICONDUCTORS Type 2N5152L G eneric Part Num ber: 2N5152L Geometry 9201 Polarity NPN Qual Level: JA N -JA N S

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 1 o% #f 1 l $ I c I ^88888 id L SEMICONDUCTORS Type 2N5151 G eneric Part Num ber: 2N5151 Geometry 9702 Polarity PNP Qual Level: JA N -JA N S

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr m o% #f 1 l 1 1 I c I ^88888 D a t a S h e e t No. 2 N 5 1 5 4 L $ id L SEMICONDUCTORS Type 2N5154L G eneric Part Num ber: 2N5154L Geometry 9201 Polarity NPN Qual Level: JA N -JA N S

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 1 5 3 o% #f 1 l $ I c I ^88888 id L SEMICONDUCTORS Type 2N5153 G eneric Part Num ber: 2N5153 Geometry 9702 Polarity PNP Qual Level: JA N -JA N S

PA304

Abstract: A104 A304 MA104 MA304 T-25
Contextual Info: |jA 1 0 4 •|JA 3 0 4 NEGATIVE VOLTAGE REGULATORS FA IRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E S C R IP T IO N — The 104 fa m ily o f Precision Negative V o ltage Regulators is constructed using the F a irch ild Planar* e p ita x ia l process. This device can be program m ed b y a single external

Contextual Info: ¿888888888 |pM iwiHBBffi sm sssBPe .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr D a t a S h e e t No. 2 N 5 0 0 3 o % #f 1 l $ I Ic ^88888 id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N5003 Type 2N5003 Geom etry 9702 Polarity PNP Qual Level: JA N - JA N T X V

X10391

Contextual Info: 4N47, 4N48, 4N49 OPTOCOUPLERS D 2413, F E B R U A R Y 1978 - R E V IS E D S E P T E M B E R 1981 G A L LIU M ARSENIDE DIODE IN FR A R E D SOURCE O PTIC A LLY COUPLED TO A HIG H -G A IN N-P-N SILICO N PHOTOTRANSISTOR • JAN, JA N TX , JA N T X V Versions Available

Contextual Info: I . .• I Preliminary Data Sheet No. P D - 9.1274C International n ,r IORKectitier R E PE T IT IV E A V A LA N C H E A N D IR H Y 7130C M irhy 8 1 3 ocm dv/dt R A T E D JA N SR 2N 7380 JA N SH 2N 7380 tREF: MILf ,R^ i 9A 5? ? ^ ] H EX FET T R A N S I S T O R

diode EGP 10

Abstract: diode EGP diode gp 421 lcf6
Contextual Info: IEEE 1990 Bipolar Circuits and Technology Meeting 5.2 A NEW PHYSICAL COMPACT MODEL FOR LATERAL PNP TRANSISTORS F.G. O’Hara, J.J.H. van den Biesen, H.C. de Graaff and J.B. Foley.# Philips Research Laboratories P.O. Box 80.000 5600 JA Eindhoven - The Netherlands

Contextual Info: STANLEY ELECTRIC CO LTD crr * ja Z H L E * " 0002033 8S2 » IIS T PHOTODARLINGTON TRANSISTOR PD504 • FEATURES • • Package Dimensions HIGH SENSITIVITY lc = 15mA TYP. FOR PHOTOSENSOR (BN504 COMBINATION) ■ APPLICATION • • OPTICAL SWITCH PHOTOSENSOR

7901

Abstract: 2N7222 IQR 2400 IRFM440 IRFM440D
Contextual Info: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED TRANSISTOR N-CHANNEL IRFM440 SN7SSS JANTXSN7SSS JA NTXV2N7222 [REF: MIL-S-1S500/S9B] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET technology is the key to International

i232

Abstract: 2N7336 436D IRFG6110 IGD 001
Contextual Info: Data Sheet No. PD-9.436D INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG6110 SN7336 JA NTX2N7336 JANTXV2N7336 COMBINATION N AND P CHANNEL [2 EACH] POWER MOSFETs 14 LEAD DUAL-IN-LINE QUAD CERAMIC SIDE BRAZED PACKAGE [REF: MIL-S-19500/598] 100 Volt, 0.7 Ohm (N-Channel) and

2SC1448

Abstract: 2SA740 TO-22OAB transistor 2sC1448 to22oab 2sc144 AC75
Contextual Info: *> 'Ja > P N P = *ttifc y U - SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR 2SA740 O Power Am plifier Applications. O V ertical Output Applications. • 2SC1448 t => 'S ? ' * '• /* ') Kit. *) • Complem entary to 2SC1448 MAXIM UM R A TIN G S T a=25°C )

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A