JA MARKING Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues • We declare that the material of product 3 compliance with RoHS requirements. 1 Ordering Information 2 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel

marking MA

Abstract: KTK920T
Contextual Info: SEMICONDUCTOR KTK920T MARKING SPECIFICATION TSQ PACKAGE 1. Marking method Laser Marking MA 1 No. JA 2. Marking 2 Item Marking Description Device Mark MA KTK920T * Lot No. JA 2006. 1st Week [ 0 : 1st Chracter, 1:2nd Character ] Note * Lot No. marking method

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues • We declare that the material of product 3 compliance with RoHS requirements. 1 Ordering Information 2 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel

KDS135S

Abstract: JA MARKING SOT23 marking J1
Contextual Info: SEMICONDUCTOR KDS135S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 JA 1 2 Item Marking Description Device Mark JA KDS135S - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

marking E5

Abstract: KDS166T S5 MARKING marking S5 E5 MARKING
Contextual Info: SEMICONDUCTOR KDS166T MARKING SPECIFICATION TSV PACKAGE 1. Marking method Laser Marking S5 1 No. JA 2. Marking 2 Item Marking Description Device Mark S5 KDS166T * Lot No. JA 2005. 1st Week [ 0 : 1st Chracter, 1:2nd Character ] Note * Lot No. marking method

mark Bb

Abstract: e5 marking
Contextual Info: SEMICONDUCTOR USFB13L MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 BB JA 1 CATHODE MARK No. Item Marking Description Device Mark BB USFB13L * Lot No. JA Manufacturing date Year/Week Note) * Lot No. marking method Year Periode (Year)

Contextual Info: SEMICONDUCTOR KDS126T MARKING SPECIFICATION TS6 PACKAGE 1. Marking method Laser Marking UB 1 No. JA 2. Marking 2 Item Marking Description Device Mark UB KDS126T * Lot No. JA 2005. 1st Week [ 0 : 1st Chracter, 1:2nd Character ] Note * Lot No. marking method

marking JA

Abstract: KDS135 Semiconductor marking JA
Contextual Info: SEMICONDUCTOR KDS135 MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking JA 0 1 2 1 No. Item Marking Description Device Mark JA KDS135 hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

KMA6D0P20X

Abstract: M01 marking
Contextual Info: SEMICONDUCTOR KMA6D0P20X MARKING SPECIFICATION TSOP-6 PACKAGE 1. Marking method Laser Marking. 2. Marking M01 1 JA 2 3 No. Item Marking Description Device Mark M01 KMA6D0P20X * Lot No. JA Manufacturing date Year/Week Pin No. Dot Pin 1 Note) * Lot No. marking method

KRA721U

Contextual Info: SEMICONDUCTOR KRA721U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking JA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JA KRA721U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

KRA721E

Abstract: marking JA
Contextual Info: SEMICONDUCTOR KRA721E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking JA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark JA KRA721E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.

Contextual Info: UK Low Noise, Low Power, 32 Taps X9316 E2POT Nonvolatile Digital Potentiometer FEATURES DESCRIPTION • Low Micropower CMOS — Vcc = 3V to 5.5V — Active Current, 50|jA Increment Max — Standby Current, 400|jA (Store) Max • Low Noise • 31 Resistive Elements

214012

Abstract: 2651 300V awg26 105c 020C E83005 IEC60512 IEC60664 AWM 2651 839021
Contextual Info: 1.27 mm SRC 単列コネクター ミニブリッジ ケーブルシステム www.erni.com Catalog JA 074560 01/10 Edition 5 www.erni.com 2 Catalog JA 074560 Catalog 10/06 JA 074560 01/10 Edition 1 Edition www.erni.com 5 1.27 mm SRC 単列コネクター - ミニブリッジ™ ケーブルシステム

LQH3C470

Abstract: BD914 Sanyo OS-CON capacitors LT1316CMS8 LT1316CS8
Contextual Info: r r u u m TECHNOLOGY _ LT1316 Micropower DC/DC Converter with Programmable Peak Current Limit FCRTURCS D C S C R IP TIO n • Precise Control of Peak Switch Current ■ Quiescent Current: 33|jA in Active Mode 3|jA in Shutdown Mode ■ Low-Battery Detector Active in Shutdown

Contextual Info: Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 1 ANODE 3 2 CATHODE 3 1 2 MAXIMUM RATINGS Rating Reverse Voltage MMBD2835LT1 Symbol VR Value Unit Vdc IF 35 75 100 mAdc Symbol PD Max 225 Unit mW R θ JA PD 1.8 556 300 mW/°C °C/W mW R θ JA

Contextual Info: P o w er M an ag em en t Low Power, 5Y |HP Reset - Active LOW, Open-Drain Output Improved Dallas DS1233D replacement — Over 60% lower maximum supply current - 350m s Reset Period Low Supply Current — 20|jA maximum 5.5V — 15|jA maximum (3.6V) The IMP1233D supply voltage monitor is an improved, low-power

LTC1154

Contextual Info: 11 m i / r u ^Æ Êm F LTC1154 m TECHNOLOGY High-Side M icro po w e r MOSFET Driver F€ R TU R € S D € S C R IP T IO fl • Fully Enhances N-Channel Power MOSFETs ■ 8|jA Iq Standby Current ■ 85|jA Iq ON Current ■ No External Charge Pump Capacitors

Contextual Info: MAXIMUM RATINGS Symbol Value Reverse Voltage Rating Vr 70 Vdc Forward C urrent if 200 m A dc *FM surqel 500 m Adc Symbol M ax Unit Pd 225 mW 1.8 m W *C Ro ja 556 ;c / w pd 300 mW 2.4 mW/°C Ro ja 417 °C'W TJ ' Tstq - 5 5 to +150 3C Peak Forw ard Surge C urrent

Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away

DIODE MARKING EJL

Abstract: DIODE EJL SG20TC15M SS81
Contextual Info: Schottky Barrier Diode Twin Diode • fl- tlH S G 20T C 15M OUTLINE Unit: mm Package : FTO-220G Weight L54g Typ 150V 20A 4.5 Feature • Tj=1751C • 1SIr=30|jA • U lc x u • • • • • Tj=175°C High lo Rating Full Molded Low Ir=30)jA Resistance for thermal run-away

Contextual Info: LinfiAR. TECHNOLOGY f ö lL i M Q J M i l Final Electrical Specifications LTC1665 Micropower Octal 8-Bit DAC Fe b ru a ry 1999 KRTURCS D C S C R IP TIO n • Tiny: 8 DACs in the Board Space of an SO-8 ■ Ultralow Power: 56|jA per DAC Plus 1|jA Sleep Mode for Extended Battery Life

SG30TC

Contextual Info: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G SG30TC 15M Unit : mm Weight 1.54g Typ nvhfB-SKW 15 0 V 3 0 A .4.5 Feature >Tj=150°C • Tj=150°C • 1 High lo Rating >7HÆ -J b K » » Full Molded 1 Low Ir=40|jA Ir=40|jA ' Resistance for thermal run-away

SG30TC15M

Contextual Info: Schottky Barrier Diode Twin Diode • fl-tlH O U T L IN E S G 30T C 1 5 M 150V 30A Feature • Tj=1751C • Tj=175°C • High lo Rating • Full Molded • 1SIr=40|jA • Low Ir=40|jA • U lc x u • Resistance for thermal run-away Main Use • X 'f'yf-y'fM M