SG20TC15M Search Results

Contextual Info: SG20TC15M CHARACTERI STI C DI AGRAMS 順電力損失曲線 せん頭サージ順電流耐量 Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability Forward Power Dissipation PF〔W〕 Tc＝１７５℃ （MAX） Tc＝１７５℃ （TYP）

Contextual Info: SG20TC15M •特性図 CHARACTERI STI C DI AGRAMS 順方向特性 順電力損失曲線 せん頭サージ順電流耐量 Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability Tc＝１７５℃ （MAX） Tc＝１７５℃ （TYP）

G20TC15M

Contextual Info: Schot t kyBar r i erDi ode •外観図 SG20TC15M OUTLI NE Package：FTO220G pi n） （3 （例） ロット記号 Date code 150V20A t ：mm Uni 4.5 10.０ 煙Tj＝１７ ５℃ 煙フルモールド 煙低 I ０µA R ＝３ 煙熱暴走を起こしにくい

7555-T

Abstract: M1FM3
Contextual Info: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct

SG DIODE MARKING

Abstract: 2KV DIODE diode sg 45
Contextual Info: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G S G 20T C 1 5 M U nit : mm W eight 1.54g Typ w h jtH H W 15 0 V 2 0 A 4.5 Feature >Tj=150°C • Tj=150°C 1 High lo Rating » Full Molded 1 Low Ir=30|jA >7H Æ - J b K •ÎSIr=30|jA

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE Package I FTO-220G S G 20T C 1 5 M Unit : mm Weight J.54g Typ 150V 20A 4.5 Feature • Tj=i5(rc • Tj=150°C • High lo Rating • 7 / iæ - ju ^ • I r =30^A • Full Molded • *& « £ « & : u c < u • Resistance fo r thermal run-away

DIODE MARKING EJL

Abstract: DIODE EJL SG20TC15M SS81
Contextual Info: Schottky Barrier Diode Twin Diode • fl- tlH S G 20T C 15M OUTLINE Unit: mm Package : FTO-220G Weight L54g Typ 150V 20A 4.5 Feature • Tj=1751C • 1SIr=30|jA • U lc x u • • • • • Tj=175°C High lo Rating Full Molded Low Ir=30)jA Resistance for thermal run-away

SG20TC15M

Abstract: schottky diode marking A7 SS81 diode ir30 gi diode FTO-220G
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE S G 20T C 1 5 M 150V 20A Feature • Tj=175°C • Tj=175°C • High lo Rating • Full Molded • 7 ;iÆ - ,/b F • <£Ir=30|jA • U le < li • lË iS IÎE E 2kV{*IŒ • Low Ir=30|jA • 7 . 4 " jJ -V 'j'W lÜ k

marking EB diode

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE S G 20TC1 5 M U nit : m m Package : FTO-220G nyha^ 0O 150V 20A Feature • TI=175"C • Tj=175°C • High lo Rating • 7 ) \Æ — ll/ K • Ir= 3 0 h A • Full Molded • Low lR=30pA • Resistance fo r thermal run-away