J431 Search Results

l55b

Abstract: 2200 microfarad electrolytic capacitor J501M 148X E1600c mil-c-3965 22000 microfarad capacitor 200D607X0040A1
Contextual Info: A COMPANY TYPE 2 0 0 D. 202D W et Tantalum C apacitors OF SPRAGUE W et Sintered Anode T a n t a l e x Components T a n t a p a k ® C apacitor Assem blies FEATURES Wet Sintered Anode capacitor assemblies are widely used in filter, coupling, bypass and time-delay circuits in

Vantis ISP cable

Abstract: CMB2102 EPF10K Tektronix 2224
Contextual Info: MMCCMB2102 Controller and Memory Board CMB2102 User’s Manual Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of the application or use of any product or circuit described

175096-001

Abstract: 172934-001 128941-001 172936-001 172962-001 Ledex 128941-001 172935 J438 3L J425 48-16R-22-55S6
Contextual Info: Ledex Hermetically Sealed Packaged Switches Overview . 2 Basic Control Circuits .3-4 Standard Models 5 Pole 2 Throw 13 Pole 2 Throw

j4313

Abstract: j4313-o c5242 2sc5200 amplifier circuit
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.

J4310F-Y

Abstract: J4310F J4310 J4310F-O
Contextual Info: FJAF4310 FJAF4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJAF4210 TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

j4315

Abstract: j4315O
Contextual Info: FJL4315 FJL4315 Audio Power Amplifier • • • • High Current Capability : IC=15A High Power Dissipation Wide S.O.A Complement to FJL4215 TO-264 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

MJ423

Abstract: MJ413 J413 NIJ431 MJ431
Contextual Info: MJ413 SILICON MJ423 J431 CASE 11 High-voltage NPN silicon tra n sisto rs designed for medium-to-high-voltage in v e rters, converters, re g ­ u lato rs and switching circuits. Q ) S T Y L E 1: PIN T . BA SE 2. EM IT TER C A SE: CO LLEC TOR MAXIMUM RATINGS

Contextual Info: ADV739x Evaluation Board Documentation ADV7390, ADV7391, ADV7392, ADV7393 Video Encoder Evaluation Boards Featuring EVAL-ADV739xFEZ Front-end board EVAL-ADV739x Evaluation Note Rev. B Dec. 2006 Analog Devices B.V. Video Group Limerick 1 of 43 Table of Contents

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

RTL8211E

Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

ISL9504

Abstract: b6886 PP3V42G3H NVIDIA G84m ISL9504BCRZ C8050 12v p66 apple k50 apple M75 MLB 820-2101 PP3V42
Contextual Info: 8 6 7 2 3 4 5 CK APPD OROYA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ? 03/20/2007 - DVT

Contextual Info: HIGH REPEATABILITY ULTRAMINIATURE BROADBAND ATTENUATOR RELAYS SERIES DESIGNATION RELAY TYPE A152 Attenuator relay series INTERNAL CONSTRUCTION Armature Moving Contact Attenuator Pad/ Contact Assembly SCHEMATIC DIAGRAM 3 5 2 6 1 7 Terminal view. Case ground.

Contextual Info: BROADBAND HIGH REPEATABILITY TO-5 RELAY SPDT DC–8 GHz SERIES DESIGNATION RF311 RF331 RELAY TYPE RF311 SPDT RF TO-5 relay RF331 Sensitive, SPDT RF TO-5 relay INTERNAL CONSTRUCTION UNI-FRAME SERIES PERFORMANCE FEATURES UPPER STATIONARY CONTACT MOVING CONTACT

Contextual Info: RF & MICROWAVE SERIES HIGH REPEATABILITY, NORMALLY CLOSED, BYPASS RF RELAYS SERIES DESIGNATION RF310 RF313 RELAY TYPE RF310 Repeatable, RF, N.C. bypass relay RF313 Sensitive, repeatable, RF, N.C. bypass relay INTERNAL CONSTRUCTION PERFORMANCE FEATURES The ultraminiature RF310 and RF313 relays are designed with an internal

J412

Abstract: a150 attenuator j134 A152 ER412D RF300 ER114D
Contextual Info: HIGH REPEATABILITY ULTRAMINIATURE BROADBAND ATTENUATOR RELAYS SERIES DESIGNATION RELAY TYPE A152 Attenuator relay series INTERNAL CONSTRUCTION Armature Moving Contact Attenuator Pad/ Contact Assembly SCHEMATIC DIAGRAM 3 5 2 6 1 7 Terminal view. Case ground.

J4-81

Contextual Info: MMCFPGA1200UM/D Rev 1 JANUARY 1999 MMCFPGA1200 FIELD PROGRAMMABLE GATE ARRAY I/O PERIPHERAL BOARD FPGA IPB USER’S MANUAL MOTOROLA Inc., 1998, 1999; All Rights Reserved Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. Motorola does not

j4313-o

Abstract: NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.

RF180

Abstract: J412 ER412D j114dd ER116C rt duroid RF180-12
Contextual Info: MAGNETIC-LATCHING, BROADBAND RF RELAYS DPDT RF180 The Series RF180 relay is an ultraminiature, hermetically sealed, magnetic-latching relay featuring extremely low intercontact capacitance for exceptional RF performance over the full UHF spectrum. Its low profile height and .100"

J412

Abstract: S172-12 ER116C rf311 S172D-5 S172 S172-5 S172D-12 ER412T J114DD
Contextual Info: CENTIGRID SURFACE MOUNT COMMERCIAL RELAYS SERIES S172 DPDT SERIES DESIGNATION RELAY TYPE S172 DPDT basic relay S172D DPDT relay with internal diode for coil transient suppression INTERNAL CONSTRUCTION DESCRIPTION The S172 surface mount Centigrid® relay is an ultraminiature, hermetically

J412

Abstract: j114dd 432T-26 432D 432T 432T-5 Teledyne Relays 28vdc
Contextual Info: SERIES ESTABLISHED RELIABILITY ESTABLISHED RELIABILITY TO-5 RELAYS 432 SENSITIVE DPDT SERIES DESIGNATION RELAY TYPE 432 DPDT basic relay 432D DPDT relay with internal diode for coil transient suppression DPDT relay with internal diodes for coil transient suppression and polarity

412V 432V

Abstract: High-Performance J412 412V 412DDV-26 j422d ER411T 712TN TELEDYNE 412DV
Contextual Info: SERIES HIGH-VIBRATION, HIGH-PERFORMANCE TO-5 RELAY 412V 432V DPDT SERIES DESIGNATION RELAY TYPE 412V DPDT basic high-vibration relay 412DV DPDT high-vibration relay with internal diode for coil transient suppression DPDT high-vibration relay with internal diodes for coil transient

RF341

Abstract: J412 RF341Y-5 ER412D RF341-12 RF341-26 RF341-5 ER116C 6 VOLT RELAY
Contextual Info: RF & MICROWAVE SERIES MAGNETIC-LATCHING, BROADBAND RF RELAYS SPDT RF341 The RF341 series relay is an ultraminiature, hermetically sealed, magnetic-latching relay featuring extremely low intercontact capacitance for exceptional RF performance well into the C band. It’s low profile and small size make it

J412

Abstract: j412dd J412D J114DD j422d RF312-5 er411t J422DD ER432T J116C
Contextual Info: HIGH REPEATABILITY 8 GHz TO-5 RELAYS SIGNAL INTEGRITY TO 12Gbps DPDT SERIES DESIGNATION RELAY TYPE 2& 2EPEATABLE 2&4/ RELAY INTERNAL CONSTRUCTION SERIES RF312 PERFORMANCE FEATURES 2&2& RELAYS HIGH FREQUENCY PERFORMANCE 4HE

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor