J3 S9013 Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)

s9013 transistor

Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

S9013 SOT-23

Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
Contextual Info: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

S9013 J3

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: S9013LT1 3 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u S9013LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued) Characteristics

S9013

Contextual Info: S9013 3 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u S9013 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Unit

Contextual Info: S9013LT1 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 O E=20 Vdc, I E= 0 ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

S9013LT1

Contextual Info: S9013LT1 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 5.0 500 S9013LT1=J3 25 0.1 40 100 100 E=20 Vdc, I E= 0 O ) 40 5.0 WEITRON http://www.weitron.com.tw 1/3 0.1 u 0.1 u 0.1 u Rev.A 13-May-05 S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M

S9012M

Abstract: S9013M
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03B Plastic-Encapsulate Transistors S9013M TRANSISTOR DESCRIPTION NPN Epitaxial Silicon Transistor C WBFBP-03B 1.2x1.2×0.5 unit: mm FEATURES High Collector Current. (IC=500mA) Complementary to S9012M

Contextual Info: SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 1. BASE TRANSISTOR NPN 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR NPN SOT–323 FEATURES  High Collector Current  Excellent HFE Linearity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 S9013LT1 1. BASE TRANSISTOR（ NPN ） 2. EMITTER 3. COLLECTOR Parameter Symbol ０．９５ ０．４ ０．９５ １．９ ２．４ １．３ ２．９ Power dissipation

S9013LT1

Contextual Info: S9013LT1 TRANSISTOR NPN 1 .BASE 2 .EMITTER 3 .CO LLECTOR FEATURES Power dissipation Pcm : 0.3 W (Tamb=25°C) Collector current 0.5 A ICM: Collector-base voltage V(BR)CBo :40V Operating and storage junction temperature range Tj.Tstg :-55°C to+150°C UNIT: mm

Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA） z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PC=300mW S9013 Pb Lead-free APPLICATIONS z High Collector Current.

J3 s9013

Abstract: S9013 SOT-23 transistor S9013 S9013 transistor SOT23 J3 s9013 transistor s9013 equivalent S9013 J3 J3 SOT MARKING J3 SOT-23
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA） z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PC=300mW S9013 Pb Lead-free APPLICATIONS z High Collector Current.

NPN Silicon Epitaxial Planar Transistor

Abstract: transistor s9012 S9012 S9013W J3 SOT
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA） z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PT=200mW S9013W Pb Lead-free APPLICATIONS z High Collector Current.

transistor BR 9013

Abstract: 9013 NPN transistor 9013 H NPN
Contextual Info: M C C S O T -2 3 P la s tic -E n c a p s u la te T r a n s is to r s ^ 1.BASE 2.EMITTER 3.COLLECTOR ." V S9013LT1 TRANSISTOR NPN 4 '" FEATURES Oi Power dissipation PcM: 0.3 W (Tamb=25'C) C ollector current ICM: 0 .5 A C ollector-base voltage V(BR)CBO:40V

59013

Abstract: S9013 s9013 transistor IC-500
Contextual Info: 1 S9013 couxcToq NPN General Purpose Transistors % - v€ v2 SOT-23 ri/nrrR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOItage Collector Current-Continuous Symbol V a lu e V CEO VCBO 25 lc Total Device Dissipation FR-5 Board 1)

Contextual Info: FS9952_LP1 Data Sheet 2,000 counts auto range DMM IC. Rev. 1.8 Aug 2006 Fortune Semiconductor Corp. FS9952_LP1-DS-18_EN CR-004 FS9952_LP1 Taipei Office： 28F, No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742

FS9952

Contextual Info: FS9952_LP2-DS-10_EN Datasheet OCT 2006 F P r R ro SC p ef e ’ er rti en es ce O nl y REV. 1.0 FS9952_LP2 Fo 2,000 counts auto range DMM IC FS9952_LP2 Fo F P r R ro SC p ef e ’ er rti en es ce O nl y Fortune Semiconductor Corporation 富晶電子股份有限公司

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

TPT5609

Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
Contextual Info: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)