J3 MARKING Search Results

Contextual Info: LDVER RDW ELECTRICAL SPECIFICATIONS* l.D TURNS RATIO P 1-P E-P3 i (J1 -J2 ) CP 4-P 5 -P 6) ; (J3 -J6 > 2.0 INDUCTANCE <P6-P4> (P3-PL) 3.0 LEAKAGE INDUCTANCE P 6 -P 4 (WITH J6 AND J3 SHDRT) P3-P1 (WITH J2 AND JL SHDRT) 4.0 INTERW INDING CAPACITANCE CP6.P5.P4) TD (J6,J3)

marking J3 sot23

Abstract: MARKING J3 SOT-23 marking J3 J3 SOT23 MARK J3 KDS2236S J3 SOT sot-23 Marking J3
Contextual Info: SEMICONDUCTOR KDS2236S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking J3 No. 1 Item Marking Device Mark J3 KDS2236S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method

TE28F640J3C-120

Abstract: 28F64J3 28f256j3c SL894 RC28F128J3C-150 SL897 28F128j3c TE28F640J3C120 sl896 28F320J3C
Contextual Info: Intel StrataFlash Memory J3 256-Mbit J3 Family Specification Update June 2005 The 28F256J3, 28F128J3, 28F640J3, and 28F320J3 may contain design defects or errors known as errata that may cause the product to deviate from published specifications. Current

35NAG

Abstract: td 6d01
Contextual Info: LDWER ROW <D <£> <£> £> ELECTRICAL SPECIFICATIONS: 1.Û TURNS RATIO (PL-P2-P3 i CJ1-J2) (P 4-P 5-P6 ) i CJ3-J6) 2.0 INDUCTANCE (P6-P4) (P3-P1) 3.0 LEAKAGE INDUCTANCE P6-P4 <V1TH J6 AND J3 SHDRT) P3-P1 (WITH JE ANI J1 SHDRT) 4.Û INTERWINDING CAPACITANCE (P6,P5,P4) TD (J6,J3>

Contextual Info: 1CT : 1CT J1 TD+ J2 TD- J3 RD+ J4 J5 J6 RD- J7 J8 lOOOpF, 2 K V ELECTRICAL SPECIFICATIONS: 1 .0 TURNS RATIO: P 3 -P 7 -P 6 : (J3-J6 ) (P 1 -P 4 -P 5 -P 2 ) : (J1-J2 ) 1 CT 1 CT 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: (P 3 -P 6 ) (J1-J2 ) 400uH 400uH MIN.

ni usb 6501

Abstract: NI 6501 RJ45 USB RJ45 usb connector
Contextual Info: 1CT : 1CT J1 J2 J3 J4 J5 J6 J7 J8 lO O O p F , TD + TDRD+ RD- 2 K V N DT E S 1,0 P I N S V I T H D U T E L E C T R I C A L CONNECTION ARE EMITTED, ELECTRICAL SPECIFICATIONS: 1.0 TU RNS RATIO: P 7 - P 6 - P 8 (P 1 -P 3 -P 2 ) : (J3 -J6 ) : (J1 -J2 ) 2.0

Contextual Info: SDS20D Semiconductor Switching Diode HIGH VOLTAGE SWITCHING APPLICATIONS Features PIN Connection y Fast switching diode in case SOD-323 y For general purpose switching application 1 Ordering Information Device 2 Marking Code 1 Package J3 □ SDS20D 1. Anode

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)

s9013 transistor

Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

S9013 SOT-23

Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
Contextual Info: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

S9013 J3

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

113 marking code PNP transistor

Abstract: 113 marking code transistor 2SB852K T146 transistor PNP transistor 2SB
Contextual Info: 2SB852K Transistor, PNP, Darlington pair Features Dimensions U n its : mm available In SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; (-)★ where ★ is hFE code 0.8 * 0. Darlington connection provides high DC current gain (hFE) fl J3

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: DMA26404 Silicon PNP epitaxial planar type Unit: mm For digital circuits • Features  Low collector-emitter saturation voltage VCE sat  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  Marking Symbol: J3  Basic Part Number

CHT9013GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT9013GP SURFACE MOUNT NPN Silicon Transistor VOLTAGE 25Volts CURRENT 0.5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SOT-23 * HFE L :J3 * HFE(H):J2 * HFE(J):J1 .066 (1.70)

Contextual Info: CYStech Electronics Corp. TO-252 Dimension C A Marking: D B G F L 3 H E K 2 I 1 J 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0650 0.0768 0.0354 0.0591 0.0177 0.0236 0.2520 0.2677 0.2125 0.2283

TAG 8409

Abstract: ASTM d4066 ms3367 TC817 THOMAS BETTS TYZ528M TL075 MS3367-4-9 MS21266-2N MS3367-5-9 TYZ28M MS3367-6-0
Contextual Info: 412031.J01 TYRAP 3/12 3/14/03 11:15 AM Page 1 / Cable Fastening Systems Ty-Rap /Ty-Fast® Cable Tying System Overview .J2-J3 Ty-Rap® Cable Ties .J4-J8 Cable Ties for Special Environments .J9-J10

m8340109k

Abstract: M8340107M M8340107K M83401-08/M1000JC M8340108M M83401
Contextual Info: THICK FILM MILITARY QUALIFIED MOLDED SIPs/LOW PROFILE • Molded package is compatible with automatic insertion equipment ■ Low profile is compatible with DIPs p o x jR is r s Models M83401-07/M83401-08/M83401 -09 J3"' Resistor Network CHARACTERISTICS 24.99

Contextual Info: Not Recommended for New Designs bq27505-J3 www.ti.com SLUS986A – OCTOBER 2009 – REVISED FEBRUARY 2010 System-Side Impedance Track Fuel Gauge 1 INTRODUCTION 1.1 FEATURES 1.2 • Battery Fuel Gauge for 1-Series Li-Ion Applications • Resides on System Main Board

Contextual Info: Not Recommended for New Designs bq27505-J3 www.ti.com SLUS986A – OCTOBER 2009 – REVISED FEBRUARY 2010 System-Side Impedance Track Fuel Gauge 1 INTRODUCTION 1.1 FEATURES 1.2 • Battery Fuel Gauge for 1-Series Li-Ion Applications • Resides on System Main Board

TRANSISTOR BI 187

Abstract: sot-23 npn marking code cr TRANSISTOR BC 187 BUV71 bc 187 npn transistor TRANSISTOR BI 237 on BC 187 TRANSISTOR telefunken ta 750 12A3 T0126
Contextual Info: L 1 TELEFUNKEN ELECTRONIC 17E D • ô'téOO'ib 000*5571 0 . BUV71 m S F M IM electronic CrMiiwltchnofogw» T-S3-J3 Silicon NPN Power Transistors Applicâtions: Motor controls, switching mode power supplies Features: • Implantation • High reverse voltage

100D9103

Abstract: 100D91 j814 J8 N type
Contextual Info: A d v a n c e d R e l e a s e FEATURES MODEL NO. 100D9103 420 - 450 MHz 47 dB Directivity 100 dB Isolation Amplitude Tracking Phase Tracking MFD Switch Input MARKING AREA 7.00 2.00 3.00 J7 1.00 .25 J1 .75 4 X .253-.262 DIA THRU J4 J3 J7 .25 CONNECTOR, 15 PIN

100C9102

Abstract: marking j9 combiner
Contextual Info: A d v a n c e d R e l e a s e FEATURES MODEL NO. 100C9102 420 - 450 MHz 0.1dB Insertion Loss 100 dB Isolation SMA Connectors MFD Combiner 12 X CONNECTOR, SMA FEMALE .38 LONG TYP MARKING AREA J1 6.50 J3 2:1 COMBINER J6 2:1 COMBINER J9 2:1 COMBINER J12 J2 6.000

murata filter cfm 455 d

Abstract: CFJ455K 13 murata filter cfj455k e10.7s CFWM 450 CFM455D cfj455K14 murata ceramic filter e10.7a cfj455k5 murata murata cfj 455
Contextual Info: FILTERS FOR AM APPLICATIONS 450–470kHz SFU/SFZ SERIES SFU450B14 for contact to IFT SFZ450HL3/JL3/KL3 SFZ450H3/J3/K3 (for contact to resistor) FEATURES • Center frequency range between 450 and 470kHz is available. Standard tolerance is ±2kHz. ■ For synthesizers, the types of center