J212 WE Search Results

ultra low igss pA mosfet

Abstract: ultra low igss pA j174 Transistor AND DIODE Equivalent list Ultra High Input Impedance N-Channel JFET Amplifier sd210 3n164 equivalent SST113 ULTRA LOW NOISE N-CHANNEL JFET 2N3958 equivalent
Contextual Info: J210, J211, J212 LOW NOISE N-CHANNEL J-FET GENERAL PURPOSE AMPLIFIER Linear Integrated Systems TO-92 Plastic FEATURES HIGH GAIN gfs = 7000µmho MINIMUM J211, J212 TO-92 D HIGH INPUT IMPEDANCE IGSS= 100pA MAXIMUM G LOW INPUT CAPACITANCE Ciss= 5pF TYPICAL

212 s sot-23

Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 MMBFJ211
Contextual Info: J211 / J212 / MMBFJ211 / MMBFJ212 MMBFJ211 MMBFJ212 J211 J212 G S G S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient

Contextual Info: J212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted

Contextual Info: J212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted

SST210-11

Abstract: FL-41 J210 SST212 SST210
Contextual Info: calocfic N-Channel JFET CORPORATION J210 - J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.

SS211

Abstract: ss 211
Contextual Info: N-Channel JFET caioqic CORPORATION J210 -J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.

Contextual Info: d o tfi1' caloqic CORPORATION N-ChannelJFET v J210 - J212/SST210 - SST212 FEATURES DESCRIPTION • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFE T single device encapsulated in a TO-92 plastic package well suited for automated assembly.

SSTJ210

Abstract: J210
Contextual Info: N-Channel JFET LLC J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,

J210

Abstract: SSTJ210 transistor j210 marking sot-23 212 s sot-23 J212 SSTJ211 SSTJ212 J210 equivalent
Contextual Info: N-Channel JFET CORPORATION J210 – J212 / SSTJ210 – SSTJ212 DESCRIPTION FEATURES • Low Noise • Low Leakage • High Power Gain The J210 Series is an N-Channel JFET single device encapsulated in a TO-92 plastic package well suited for automated assembly. The device features low leakage,

Contextual Info: LSJ212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF

Contextual Info: LSJ212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 FEATURES DIRECT REPLACEMENT FOR SILICONIX J212 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF

VNC2-32

Abstract: V2DIP2-32 VNCL2-32Q
Contextual Info: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

VNC2

Contextual Info: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

transistor j210

Abstract: 212 t sot-23
Contextual Info: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from

VNC2-32

Abstract: u1M code vnc2 ftdi spi example
Contextual Info: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

IO24

Abstract: VNC2-48 Vinculum II
Contextual Info: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.0 Issue Date: 2010-04-15 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

V2DIP2-32

Abstract: usb flash drive circuit diagram Vdip1 VNC2-32
Contextual Info: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

Contextual Info: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

V2DIP1-32

Abstract: VNC2-32Q ftdi spi example usb flash drive circuit diagram t4 3570 datasheet Vdip1 VDIP2 VNC1L VNC2
Contextual Info: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

V2DA

Abstract: VDIP1
Contextual Info: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.0 Issue Date: 2010-04-15 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

EFE300M

Abstract: EFE400 EFE-300 EFE300 EFE400M J2/CMX7161
Contextual Info: EFE300 / EFE400 EFE300M / EFE400M AC/DC Power Supply Series APPLICATION NOTE 68892 EFE300_400 App note 4.doc Document Number 68892 Page 1 of 12 1. INPUT. 3

Contextual Info: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.01 Issue Date: 2010-05-24 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

V2DIP1-48

Abstract: Vdip1 vnc2-48l1a usb flash drive circuit diagram vinculum VNC2-48 usb male connector pcb mounted Vinculum II
Contextual Info: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.01 Issue Date: 2010-05-24 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

J31 transistor

Abstract: ST16C650A J37 transistor 48TQFP ST49C101A-XX XR16C850 XR16L651
Contextual Info:  XR16L651 Evaluation Board User’s Manual Rev 1.3 Introduction EXAR is proud to announce the XR16L651 single channel UART. The XR16L651 48 pin TQFP package is compatible to ST16C450/550/650A and XR16C850. The board will support all these devices in the 48TQFP package when ordered from the factory. For a list of features, refer to the individual data sheets at