J211 TOP Search Results

Contextual Info: J210, J211, J212 / SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE TO-92 IGSS= 100pA MAXIMUM CISS= 5pF TYPICAL Plastic D ABSOLUTE MAXIMUM RATINGS

Contextual Info: J210, J211, J212 SSTJ210, SSTJ211, SSTJ212 LOW NOISE N-CHANNEL JFET GENERAL PURPOSE AMPLIFIER TO-92 TO-92 FEATURES HIGH GAIN gfs=7000µmho MINIMUM J211, J212 HIGH INPUT IMPEDENCE LOW CAPACITANCE Plastic D IGSS= 100pA MAXIMUM G CISS= 5pF TYPICAL S ABSOLUTE MAXIMUM RATINGS

transistor j210

Abstract: J210 Siliconix JFETs Dual Siliconix N-Channel JFETs AN104 J211 J212
Contextual Info: J210/211/212 N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J211 –2.5 to –4.5 –25 6 7 J212 –4 to –6 –25 7 15 J211, For applications information see AN104, page 1.

212 s sot-23

Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 TOP CBVK741B019 F63TNR J211 MMBFJ211
Contextual Info: J211 / J212 / MMBFJ211 / MMBFJ212 MMBFJ211 MMBFJ212 J211 J212 G S G S TO-92 SOT-23 D Mark: 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient

Siliconix AN104

Abstract: AN104 J210 J211 J212
Contextual Info: J210/211/212 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 -1 to -3 -25 4 2 J211 -2.5 to -4.5 -25 6 7 J212 -4 to -6 -25 7 15 J211, For applications information see AN104, page 21. Features

J211 jfet siliconix

Abstract: J211
Contextual Info: J211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 FEATURES DIRECT REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise noted

Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUM M ARY Part Number VGS off (V) V (BH)GSS M in (V) 9 fs Min (mS) loss Ml*1 (mA) J2 1 0 - 1 to - 3 -2 5 4 J/S S T J211 - 2 .5 t o -4 .5 -2 5 6 7 -2 5 7 15 J /S S T J 2 1 2

Siliconix N-Channel JFET

Contextual Info: LSJ211 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J211 FEATURES DIRECT REPLACEMENT FOR SILICONIX J211 HIGH GAIN gfs = 7000µmho MIN HIGH INPUT IMPEDANCE IGSS = 100pA max LOW INPUT CAPACITANCE Ciss = 5pF

2N5911

Abstract: SSTJ212 transistor j210 J210 J211 J212 SSTJ211
Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25

SSTJ211

Abstract: J210 transistor j210 J211 J212 SSTJ212 SOT-23 2.D SSTJ210 marking Z2 sot23
Contextual Info: J/SSTJ210 Series Vishay Siliconix N-Channel JFETs J210 SSTJ211 J211 SSTJ212 J212 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25

transistor j210

Abstract: J210 J211 J212 SSTJ211 SSTJ212
Contextual Info: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features

Siliconix JFETs Dual

Abstract: transistor j210 J210 J211 J212 SSTJ211 SSTJ212
Contextual Info: J/SSTJ210 Series N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J210 –1 to –3 –25 4 2 J/SSTJ211 –2.5 to –4.5 –25 6 7 J/SSTJ212 –4 to –6 –25 7 15 Features

transistor j210

Abstract: 212 t sot-23
Contextual Info: G S G S TO-92 SOT-23 D Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from

VNC2-32

Abstract: V2DIP2-32 VNCL2-32Q
Contextual Info: Future Technology Devices International Ltd. V2DIP2-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000164 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

VNC2-32

Abstract: u1M code vnc2 ftdi spi example
Contextual Info: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.0 Issue Date: 2010-04-16 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

Contextual Info: Future Technology Devices International Ltd. V2DIP1-32 VNC2-32Q Development Module Datasheet Document Reference No.: FT_000163 Version 1.01 Issue Date: 2010-05-25 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

IO24

Abstract: VNC2-48 Vinculum II
Contextual Info: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.0 Issue Date: 2010-04-15 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

EFE300M

Abstract: EFE400 EFE-300 EFE300 EFE400M J2/CMX7161
Contextual Info: EFE300 / EFE400 EFE300M / EFE400M AC/DC Power Supply Series APPLICATION NOTE 68892 EFE300_400 App note 4.doc Document Number 68892 Page 1 of 12 1. INPUT. 3

V2DA

Abstract: VDIP1
Contextual Info: Future Technology Devices International Ltd. V2DIP1-48 VNC2-48 Development Module Datasheet Document Reference No.: FT_000236 Version 1.0 Issue Date: 2010-04-15 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

J213

Abstract: F1680 AN0267-SC01 MOSI MEANING UM0203 Z8 Encore XP F64XX Series Product Specification
Contextual Info: Application Note Getting Started with ESPI Interface Using the Z8 Encore! XP F1680 AN027301-0308 Abstract This application note demonstrates how to use the Enhanced Serial Peripheral Interface ESPI in Master and Slave mode on Z8 Encore! XP F1680 microcontrollers. The software implementation provides several

EFE300M

Abstract: EFE300 EFE-300 J212 EFE400-12
Contextual Info: EFE300 EFE400 EFE300M AC/DC Power Supply Series APPLICATION NOTE 68892 EFE300_400 App note 1.doc Document Number 68892 Page 1 of 10 1. INPUT. 3

Contextual Info: 19-1349; Rev 1a; 10/98 MAX847 Evaluation Kit Features ♦ 0.8V to 1.8V 1-cell boost Battery Input Voltage The MAX769 is similar to the MAX847 except that it contains a buck/boost DC-DC converter (for 2-cell or 3-cell inputs) rather than a boost-only converter (for

Contextual Info: Opto-Electronic Solutions 050-303 Opto-Electronic Transceiver with Mighty Mouse Connector Interface 100Mbps – 4.25Gbps Opto-electronic transceiver with Series 80 Mighty Mouse connector interface Glenair 050-303 optical transceiver employ state-of-the-art opto-electro-mechanical

c225 diode smd

Abstract: c225 capacitor smd c225 diode c228 diode smd
Contextual Info: IRDC3891 SupIRBuck TM USER GUIDE FOR IRDC3891 EVALUATION BOARD DESCRIPTION The IR3891 is a dual synchronous buck converter, providing a compact, high performance and flexible solution in a small 5mm X 6mm Power QFN package. Key features offered by the IR3891 include