J112 JFET Search Results

J112

Abstract: J112 equivalent J112 jfet J1-12 j112 on jfet j112
Contextual Info: J112 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J112 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications

Diode r4d

Abstract: j112 fet J112 J112 jfet application note jfet J111 transistor
Contextual Info: MOTOROLA Order this document by J112/D SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35

J201 N-channel JFET

Abstract: MMBFJ202 BF244 J309 5486 J309-J310 4392 p-channel jfet rf MMBFJ211 MMBF4091
Contextual Info: Section 5 JFET Datasheets J105 / J106 / J107 / JFTJ105 N-Channel Switch . 5-3 J108 / J109 / J110 / MMBFJ108 N-Channel Switch . 5-7 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch . 5-11

j112

Abstract: j112g J111
Contextual Info: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

Contextual Info: ON Semiconductort JFET Chopper Transistor J112 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

J112 jfet

Abstract: J112G J113 equivalent datasheet jfet J111 transistor application note jfet J111 transistor J111 data sheet marking j112 j112 fet transistor J112 J112
Contextual Info: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

transistor j112

Abstract: J112 jfet j112
Contextual Info: ON Semiconductort JFET Chopper Transistor J112 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

jfet j112

Abstract: J113 j111 transistor J112 J112 J112 TO92
Contextual Info: ON Semiconductort N–Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C

motorola JFET 2N3819

Abstract: BF245 application note BC237 transistor TO-92 bc108 N CHANNEL JFET 2N3819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper Transistor N–Channel — Depletion J112 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Gate Voltage VDG – 35 Vdc Gate – Source Voltage VGS – 35 Vdc Gate Current IG 50 mAdc

Contextual Info: LSJ112 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J112 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The SOT-23 package is well suited for cost sensitive applications

Contextual Info: LSJ112 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J112 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The TO-92 package is well suited for cost sensitive applications

Contextual Info: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 JFET Sw it ch e s P/ N 2N5114 2N5115 2N5116 2N5434 J108 J109 J110 J111 J112 J113 J174 J175 J176 J177 PN4391 PN4392 PN4393 SST111 SST112 SST113 SST108 SST109 SST110 SST174

J112

Abstract: J113 j111 J112 jfet J111/5
Contextual Info: ON Semiconductort N−Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain −Gate Voltage Rating VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C

J111

Abstract: j113 j112
Contextual Info: ON Semiconductort N–Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C

TO-236 MARKING CODE C3

Abstract: J112 equivalent vishay siliconix code marking to-92 TO226AA J112 TO92 j112 siliconix
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number Vcs oft (V) J/SST111 J/SST112 -3 -1 J/SST113 r DS(on) Max (Q) lo(oft) Typ (pA) ton Typ (ns) to-10 to-5 30 5 4 50 5 4 < -3 100 5 4 FEATURES BENEFITS

J111

Abstract: J112 J113 SST111 SST112 SST113 j113 equivalent 4858a
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES

to236

Abstract: 37652 Siliconix N-Channel JFETs J/SST113 J113 equivalent marking j112 SST111 C1 AN105 J111 J112
Contextual Info: J/SST111 Series N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 J/SST111, For applications information see AN105, page 1.

SST113

Abstract: SST112 J111 J112 J113 SST111
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES

marking code J111

Abstract: J113 equivalent c3 marking J/SST113 SST111 C1 to236 J111 J112 J113 SST111
Contextual Info: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES

J111

Abstract: J112 J113 SST111 SST112 SST113 marking code J111 device code J111
Contextual Info: J/SST111 Series N-Channel JFETs J111 J112 J113 SST111 SST112 SST113 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 30 5 4 J/SST111 –3 to –10 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 Features Benefits Applications

SST111

Abstract: J111 J112 J113 SST112 SST113 device code J111
Contextual Info: J/SST111 Series N-Channel JFETs J111 J112 J113 SST111 SST112 SST113 Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 30 5 4 J/SST111 –3 to –10 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 Features Benefits Applications

J113 equivalent

Abstract: J113 AN105 J111 J112 SST111 SST112 SST113 V31005
Contextual Info: J/SST111 Series Siliconix NĆChannel JFETs J111 J112 J113 Product Summary SST111 SST112 SST113 Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 -3 to -10 30 5 4 J/SST112 -1 to -5 50 5 4 J/SST113 v-3 100 5 4 J/SST111, For applications information see AN105, page 22.

c3 MARKING CODE

Abstract: c3 marking
Contextual Info: T e m ic J/SST lll Series Siliconix N-Channel JFETs J ill J112 J113 SST111 SST112 SST113 Product Summary P a r t N u m b er V g S o£F (V) r DS(on) M ax (Q ) ii)(ofr> i y p (pA) toN Typ (n s) J/S S T lll - 3 to - 1 0 30 5 4 J/SST112 - 1 to - 5 50 5 4 J/SST113

SST113

Contextual Info: Tem ic J/SST111 Series S e m i c o n d u c t o r s N-Channel JFETs J ill SST111 J112 SST112 J113 SST113 Product Summary Part Number VGS off (V ) J /S S T lll J/S S T H 2 J/SST113 t o N T y p (n s ) r DS<on) M a x ( Q ) IlXofD T y p (p A ) - 3 t o -1 0 30