J 3055 Search Results

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

2sb504

Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St

B0638

Abstract: BD638 TIP 122 100 V BD636 B0738 BD637 tip 42 darlington complementary power amplifier tip 142 BD634 73 5302
Contextual Info: BD634, BD636, BD638 PNP EPIBASE POWER TRANSISTORS IPRELIMINARY 873 Amplifier Switch Complementary Output Stages Complementary with BD633, BD635, BD637 mechanical data •— 6 , 0 - o ss l-i ! i J — 1.3 r r - - 16,5 , TT , I * ri | i * t ^ 0.05 thick Base' j i g

Contextual Info: • * fr« 7 c 3 > * • - * > * tt T 101 -1 1 TEL 0 3 3 2 5 6 - 8 8 8 1 T532 TEL # FAX ( Æ Î B f e A I B lb : ^ ) (0 3 )3 2 56 -8 8 8 4 *» )fl*R S m æ J I|g g J S 5 -l - 3 ( f t * R ï â t ' J H (06)395-4050 FAX (06)3 9 5-4 0 7 0 S Ä S S U f fi

Brown Boveri induction Motor

Abstract: sj 2025 ic sj 2025 ASEA fast thyristor berulub F GD Rectifiers BROWN BOVERI servo motor bn16 brown Boveri diode Diode BN16
Contextual Info: IGBT Module Half-Bridge Configuration VII200-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2M3055

Abstract: N3773 2m3055hv 2SC1413A pin configuration transistor 2n3055 n377 LCBX 2N3055 2N3055S 2N6253
Contextual Info: DIM A B C D E F G H J K L M 1 — 1 ! h- F -1 ► — J — ; ^T MIN — - 6,35 0,96 29,90 10,69 5,20 16,64 11,15 - 3,84 MAX 39,37 22,22 8,50 1.09 1.77 30,4 1 1,18 5,72 17,15 12,25 26,67 4,19 PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR

circuit diagram of nokia 101

Abstract: S29NS032J S29NS-J VDC048 VDE044 spansion am29f part marking Am29N643 450Ball
Contextual Info: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

ns032j0lbjw00

Abstract: B6 3308 S29NS032J S29NS-J VDC048 VDE044 LF35 Am29N643 NS064J0LBJW00
Contextual Info: S29NS-J 128 Megabit 8 M x 16-Bit , 64 Megabit (4 M x 16-Bit), 32 Megabit (2 M x 16-Bit), and 16 Megabit (1 M x 16 Bit), 110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories S29NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion

Contextual Info: DATE ECN APP’D. BY A1 6160 RGC A2 7437 JM REV 8/22/03 1-13-06 B B -1.268 [32.20]F’OSITION — POSITION LED 2 w 7 L _ n v n j rï h j L m i I f n if i pillim i n iiiiniiitg .213 [5.4] .622 [15.80] MATERIAL: .350 [8.9] HOUSING: PBT+30%G.F. UL94V-0. STANDARD COLOR: BLACK

rca 40411

Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max

RCS258

Abstract: RCA 40373 BD182 rca RCA 40363 RCA 40251 40363 2N3055 rca 40411 40411 rca bd142
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ {s a t ) —V 'C E X - m A h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 MHz min; P j to 150 W max

pj 3059

Abstract: UG-704 UG-709 UG-573 HN-P-8U UG-556 UG-706 PJ-55 PJ59 1E54
Contextual Info: IMilitary Cross Reference M IL IT A R Y J IS N U M B ER N U M B ER CW- i 23/U | 8N C -C for fem ale C W - I2 3 A /U | 8N C -C (for fem ale) L DD K ¡ P a rt no ! j PAG E 2001 CW- 155/U BNC-C(for fem ale) - C W - I5 5 A /U BNC-C(for fem aie) 2565 CW- 1S9/U

Contextual Info: Type N for Flexible Cable Crimp Attachment Type Connectors Straight Male Cable Plug C a b le T y p e r g M odel N um ber /u 55; 142; 223; 400 NNN-3055-55-000-02 58; 141; 303 NNN-3058-55-000-02 174; 179; 188; 316 \ J NNN-3188-55-000-02 H— B~ TYPE N PLUG

X20C256

Contextual Info: _ H X28C256 256K j ü E 32K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 200ns * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or Vpp Control Circuits

BDX 71

Abstract: 3055C BD142 40251 C 5039 2N6354
Contextual Info: POWER TRANSISTORS TYPE a: <_ j o a. A 0 9 3 A >h; > > LU O < _u X CO ^E c E ÜJ IL cj ( 3) s> < _o > X <o o LT3 < _u E tz > II O H @ g Ili JZ CM PACKAGE Hometaxial for linear and switching applications O a Ü. BD 142 NPN 50 45 15 12/60 4 1.1 4 117 2N 3055/BDX 10

Contextual Info: DATE REV ECN APP’D. BY A1 6160 RGC A2 7437 JM 7621 TRM 8/22/03 1-13-06 5-15-06 A3 B B O -1.268 [32.20]POSITION LED 2 F'OSITION — 7 L_n v n j W lim m o m n il pillim i n iiiiiinitg .213 [5.4] .622 [15.80] MATERIAL: .350 [8.9] HOUSING: PBT+3055G.F. UL94V-0. STANDARD COLOR: BLACK

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal

LR3441

Abstract: marking code B9 DG SMD Transistor transistor smd sensor 80L transistor bf 175 sdz-370n ccd LZ1032 Transister Data Book
Contextual Info: MOS DATA BOOK General Information Gate Arrays/Standard Cells Display Drivers 3 J T elecommunications II CCDs/CCD Peripherals ICs for Audio/Visual Equipment 6 | Voice/Melody Generators ICs for Clock Others Preface In recent years, the seemingly unlimited progress seen in

AS3055

Abstract: c3055
Contextual Info: ^ J ' o d u e h h CO M PO NENTS I APOHRR AuoUDD TO 3000 MHz TO-8 CASCADABLE AC3055 Typical Values Ultra Broad B an d w id th . 10-3000 MHz Low Noise Figure above 1.0 G H z .

M23269J

Abstract: glass capacitor CYR10 M23269 CYR53 CYR51 CYR15 capacitor cross reference avx
Contextual Info: Glass Dielectric Capacitors MIL-PRF-23269 MARKING AVX CYR10 CYR10 M23269J 02-3042 AVX JCY5A 0R5JM CYR15 J = JAN Trademark C = Capacitor Y = Glass Dielectric 5 = Last digit of year A = 4 week lot code W 28.58 1.125 Min. L AVX JCY6E 151JM 0R5 = Capacitance code –

Contextual Info: FLAT WASHERS-NYLON & FIBRE FIBRE SHOULDER WASHERS Quotations on other size washers furnished promptly upon receipt of sample, sketch or blue print. Fibre: Commercial Grade per ASTM D710 Nylon: Grade 6/6 per ASTM D4066 b V//A ! VM -J MATERIAL C U- B ill n wmanm

master slave jk flip flop

Abstract: DFN8 J 3305 MC100EP35 code KP35 MC10EP35 EL35 HP35 KP35
Contextual Info: MC10EP35, MC100EP35 3.3V / 5V ECL JK Flip-Flop Description The MC10/100EP35 is a higher speed/low voltage version of the EL35 JK flip−flop. The J/K data enters the master portion of the flip−flop when the clock is LOW and is transferred to the slave, and