IXYS 120 Search Results

LBA716

Abstract: IXDD630 DARLINGTON TRANSISTOR ARRAY V/CPC3701 CPC1006N CPC1014N CPC1019N CPC1219
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division In April, 2012, Clare, Inc., officially became IXYS Integrated Circuits Division. IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division

XYS launches New PolarP2TM Power MOSFET Family

Abstract: Ixtq460p2 IXFB120N50P2 mosfet ixys IXTH450P2 IXTP450P2 IXTQ450P2 IXTQ470P2 ixtq460
Contextual Info: IXYS Contact: Ronnie Ganitano IXYS Corporation 1590 Buckeye Dr. Milpitas Ca. 95035 Tel: 408-457-9000 IXYS launches New PolarP2TM Power MOSFET Family Milpitas, CA. and Biel, Switzerland. July 15, 2010 – IXYS Corporation NASDAQ:IXYS announces today the release of its new PolarP2TM Power MOSFET family, IXYS’ latest generation of fast and

IXYS Introduces New LED Driver ICs for Photo Flash Application

Abstract: HB Electronic Components LDS8640 LDS8681 LDS8680
Contextual Info: FOR IMMEDIATE RELEASE IXYS Contact: Dr. Octav Chirica IXYS Corporation Tel: 408-457-9000 IXYS Introduces New LED Driver ICs for Photo Flash Application Biel, Switzerland and Milpitas, CA. December 10, 2009 – IXYS Corporation NASDAQ: IXYS announces today sample availability of the LDS8640/41 and LDS8680/81, innovative 2 channels,

IGBT inverter calculation

Abstract: 3 phase IGBT inverter design design drive circuit of IGBT inverter circuit using IGBT module igbt igbt sixpack IXAN0070 IGBT JUNCTION TEMPERATURE CALCULATION igbt 600V 100A short circuit IGBT CHIP 1700V
Contextual Info: IXAN0070 Drive with the IXYS XPT IGBT IXYS used its expertise to design the optimal IGBT for motor drives applications By Iain Imrie, Jeroen van Zeeland, Ulrich Kelberlau, Vladimir Tsukanov and Elmar Wisotzki IXYS Corporation IXYS introduces the XPT IGBT, IXYS newest generation of short-circuit rated IGBTs with paralleling

IXEP1400

Abstract: CPC1706 CPC1020N
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.

IXEP1400

Abstract: CPC7601 CPC1907B CPC1106N CPC1004N CPC1006N CPC1009N CPC1114N CPC1333 IX21844
Contextual Info: Semiconductor Product Catalog IXYS Integrated Circuits Division IXYS Integrated Circuits Division is a wholly owned subsidiary of IXYS Corporation. Conveniently located close to Boston, Massachusetts, USA, IXYS Integrated Circuits Division designs, manufactures, and markets a wide variety of semiconductor devices, and is a major provider of optically isolated electronic products.

mosfet 1200V 40A

Abstract: Silicon MOSFET 1000V mosfet 1500v igbt testing pnp 1000V 2A IGBT Transistor 1200V, 25A MOSFET 1200v 3a igbt 20A 1200v pnp 1200V 2A 40N160
Contextual Info: IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the

IXAN0016

Abstract: pnp transistor 1000v pnp 1200V 2A snubber CIRCUITS mosfet Silicon MOSFET 1000V mosfet 1000v MOSFET 1200v 3a mosfet 1500v 35N120A mosfet 1200V 40A
Contextual Info: IXAN0016 IXBH40N160 BiMOSFETTM Developed for High Voltage, High Frequency Applications Ralph E. Locher IXYS Corporation Santa Clara, CA by Olaf Zschieschang IXYS Semiconductor GmbH Lampertheim, Germany ABSTRACT In the IXBH40N160, IXYS has developed an extremely fast, homogeneous base IGBT by the

IXAN0065

Abstract: IXTQ130N10T mosfet ixys
Contextual Info: IXYS Power MOSFET Datasheet Parameters Definition Abdus Sattar, IXYS Corporation IXAN0065 IXYS provides datasheets with parameters that are essential and useful for selecting the appropriate device as well as for predetecting its performance in an application. The graphs included in the datasheet represent typical performance

xenon hid ballast

Abstract: Xenon HID Block Diagram circuit diagram ballast xenon single phase inverters circuit diagram solar inverters circuit diagram HID lamp ballast HID igniter xenon ballast single phase inverter mosfet ballast diagram
Contextual Info: POWER Efficiency Through Technology N E W P R O D U C T B R I E F ISOPLUS i4-PACTM Half-Bridge MOSFET Modules IXYS Introduces new isolated phase leg modules january 2010 OVERVIEW IXYS introduces new half-bridge MOSFET modules that are available in IXYS proprietary

Inverter Welder

Abstract: inverter welder circuit resonant inverter for welding smps welder inverter resonant converter for welding IXGR48N60C3D1 600V igbt dc to dc boost converter IXGH48N60C3D1 SMPS INVERTER FULL BRIDGE FOR WELDING full bridge inverter
Contextual Info: IXYS POWER Efficiency through Technology NEW 600V GenX3 IGBTs PRO D UC T next generation 600V IGBTs for power conversion applications january 2009 OVERVIEW IXYS extends its GenX3TM insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM

IXAN0022

Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
Contextual Info: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS

IXGP70N33

Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim

Contextual Info: CPC1909 Single-Pole, Normally Open ISOPLUS -264 Power Relay INTEGRATED CIRCUITS DIVISION Description Characteristics Parameter Blocking Voltage Rating Units 60 VP IXYS Integrated Circuits Division and IXYS have combined to bring OptoMOS technology, reliability

Contextual Info: CPC1918 Single-Pole, Normally Open ISOPLUS -264 Power Relay INTEGRATED CIRCUITS DIVISION Description Characteristics Parameter Blocking Voltage Rating Units 100 VP IXYS Integrated Circuits Division and IXYS have combined to bring OptoMOS technology, reliability

Contextual Info: CPC1927 Single-Pole, Normally Open ISOPLUS -264 Power Relay INTEGRATED CIRCUITS DIVISION Description Characteristics Parameter Blocking Voltage Rating Units 250 VP IXYS Integrated Circuits Division and IXYS have combined to bring OptoMOS technology, reliability

R1211NS

Abstract: 2771A
Contextual Info: WESTCODE An IXYS Company R1211NS10x to R1211NS12x WESTCODE An Date:- 26 Aug, 2010 Data Sheet Issue:- 2 IXYS Company Distributed Gate Thyristor Types R1211NS10x to R1211NS12x Old part number R350CH10-12 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS

IXAN0034

Abstract: NTC 150 ohm NTC 130 ohm NTC 130 NTC 6000 ntc 2.5 ohm ntc 5000
Contextual Info: IXYS Semiconductor GmbH IXAN0034 Recommendations for Using NTC Temperature Sensors Integrated into IXYS Power Semiconductor Modules New generations of power semiconductor modules incorporate more and more additional functions. For example, integrated temperature sensors allow easy thermal measurements

XOD17

Abstract: monocrystalline solar cell solar cell operating temperature range monocrystalline efficiency power density for monocrystalline solar cell solar cells 120mm2 monocrystalline D-68623 solar cell response
Contextual Info: IXYS XOD17 Technical Information IXOLARTM High Efficiency Solar Cells Description IXOLARTM Solar Cells are IXYS' monocrystalline, high efficiency solar cell technology products incorporating an enhanced light trapping surface. There are 7 different cell sizes available: 36mm²,

Contextual Info: CPC1788 Single-Pole, Normally Open ISOPLUS -264 DC Power Relay INTEGRATED CIRCUITS DIVISION Description Characteristics Parameter Blocking Voltage Rating Units 1000 VP IXYS Integrated Circuits Division and IXYS have combined to bring OptoMOS technology, reliability

Contextual Info: CPC1727 Single-Pole, Normally Open ISOPLUS -264 DC Power Relay INTEGRATED CIRCUITS DIVISION Characteristics Parameter Description Rating Units 250 VP Blocking Voltage IXYS Integrated Circuits Division and IXYS have combined to bring OptoMOS technology, reliability

transistor r06

Contextual Info: CPC1777 Single-Pole, Normally Open i4-PAC DC Power Relay INTEGRATED CIRCUITS DIVISION Description Characteristics Parameter Blocking Voltage Rating Units 600 VP IXYS Integrated Circuits Division and IXYS have combined to bring OptoMOS technology, reliability

CPC1718J

Contextual Info: CPC1718 Single-Pole, Normally Open ISOPLUS -264 DC Power Relay INTEGRATED CIRCUITS DIVISION Characteristics Description Parameter Blocking Voltage Rating Units 100 VP IXYS Integrated Circuits Division and IXYS have combined to bring OptoMOS technology, reliability

single phase inverter IGBT

Abstract: Single Phase to Three Phase Converter 3 phase igbt INVERTER ac motor eupec FB15R06KL4 inverter igbt circuit diagrams single phase to 3 phase inverter AC FP10R12YT3 FP15R12YT3 FP10R12YT3 eupec IGBT cross reference
Contextual Info: □ IXYS w Overview: IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond OCB module packaging technology, located in Lampertheim, Germany has extended its portfolio of IGBT