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    IXYN100N120C3 Search Results

    IXYN100N120C3 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXYN100N120C3
    		IXYS IGBTs - Modules, Discrete Semiconductor Products, IGBT XPT 1200V 152A SOT-227B Original PDF 6
    IXYN100N120C3H1
    		IXYS IGBTs - Modules, Discrete Semiconductor Products, IGBT XPT 1200V 134A SOT-227B Original PDF 7
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    IXYN100N120C3 Price and Stock

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    IXYS Corporation IXYN100N120C3

    IGBT MODULE 1200V 152A SOT-227B
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    DigiKey IXYN100N120C3 Tube 1
    • 1 $35.72
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    Mouser Electronics IXYN100N120C3 406
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    Future Electronics IXYN100N120C3 Tube 300
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    TTI IXYN100N120C3 Tube 300
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    TME IXYN100N120C3 1
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    IBS Electronics IXYN100N120C3 3 1
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    Vyrian IXYN100N120C3 89
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    IXYS Corporation IXYN100N120C3H1

    IGBT MODULE 1200V 134A SOT-227B
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    DigiKey IXYN100N120C3H1 Tube 1
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    Mouser Electronics IXYN100N120C3H1 323
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    Verical IXYN100N120C3H1 2 1
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    TTI IXYN100N120C3H1 Tube 300
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    TME IXYN100N120C3H1 2 1
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    IBS Electronics IXYN100N120C3H1 290 10
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    Littelfuse Inc IXYN100N120C3

    Disc Igbt Xpt-Genx3 Sot-227B(Mini/ Tube |Littelfuse IXYN100N120C3
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    Newark IXYN100N120C3 Bulk 300
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    RS IXYN100N120C3 Bulk 8 Weeks 10
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    Littelfuse Inc IXYN100N120C3H1

    Disc Igbt Xpt-Genx3 Sot-227Ui(Mini/ Tube |Littelfuse IXYN100N120C3H1
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    Newark IXYN100N120C3H1 Bulk 300
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    RS IXYN100N120C3H1 Bulk 8 Weeks 10
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    IXYN100N120C3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information IXYN100N120C3 1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 86A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IXYN100N120C3 IC110 110ns OT-227B, E153432 100N120C3 PDF

    Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYN100N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 86A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IC110 IXYN100N120C3 110ns OT-227B, E153432 100N120C3 PDF

    Contextual Info: Preliminary Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYN100N120C3H1 IC110 110ns OT-227B, E153432 IF110 PDF

    iXYN100N120C3H1

    Abstract: ixyn100n120c3
    Contextual Info: Advance Technical Information IXYN100N120C3H1 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYN100N120C3H1 IC110 110ns IF110 OT-227B, E153432 100N120C3 iXYN100N120C3H1 ixyn100n120c3 PDF

    IXYN100N120C3H1

    Contextual Info: Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode IXYN100N120C3H1 High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 62A 3.5V 110ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		IXYN100N120C3H1 IC110 110ns OT-227B, E153432 IF110 100N120C3 IXYN100N120C3H1 PDF

    IXYN100N120C3

    Abstract: 100N120 100N120C3
    Contextual Info: Advance Technical Information IXYN100N120C3 1200V XPTTM IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 1200V 86A 3.5V 110ns E Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IXYN100N120C3 IC110 110ns OT-227B, E153432 100N120C3 IXYN100N120C3 100N120 PDF

    IXYS CORPORATION

    Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
    Contextual Info: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS


    Original     		DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ PDF