IXYH20N120C3D1 Search Results
IXYH20N120C3D1 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IXYH20N120C3D1 |
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IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 36A 230W TO-247AD | Original | 7 |
IXYH20N120C3D1 Price and Stock
IXYS Corporation IXYH20N120C3D1IGBT 1200V 36A TO-247 |
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IXYH20N120C3D1 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Ultra fast diodeContextual Info: Advance Technical Information IXYH20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
Original |
IXYH20N120C3D1 IC110 108ns O-247 IF110 062in. Ultra fast diode | |
Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH20N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C |
Original |
IC110 IXYH20N120C3D1 108ns O-247 IF110 | |
IXYH20N120C3D1Contextual Info: IXYH20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 17A 3.4V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M |
Original |
IXYH20N120C3D1 IC110 108ns O-247 IF110 IXYH20N120C3D1 |